Pradeep Rajagopal

Gallium nitride material structures including substrates and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

Gallium nitride material transistors and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate

Applied Physics Letters, 92(2).

Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate

Applied Physics Letters, 90(15).

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates

Davis, R. F., Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., … Mehregany, M. (2001, October). JOURNAL OF CRYSTAL GROWTH, Vol. 231, pp. 335–341.

Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates

Zeitschrift Fur MetallkundeAmerican Journal of Physiology, 92(2), 163–166.

Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Preble, E. A., Rajagopal, P., … Mehregany, M. (2001, May). JOURNAL OF CRYSTAL GROWTH, Vol. 225, pp. 134–140.

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1–16.

Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films

Materials Science Forum, 338(3), 1471–1476.

Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U46–57.

Pendeo-epitaxial growth of gallium nitride on silicon substrates

JOURNAL OF ELECTRONIC MATERIALS, 29(3), 306–310.

Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition

Materials Science Forum, 338(3), 1491–1494.

Photoluminescence characterization of Mg implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.

Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 18(3), 879–881.

Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2).

Pendeo-epitaxy of gallium nitride thin films

Applied Physics Letters, 75(2), 196–198.

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).

Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.37).