Works (24)

2008 patent

Gallium nitride material structures including substrates and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

By: E. Piner, P. Rajagopal, J. Roberts & K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2008 patent

Gallium nitride material transistors and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

By: W. Nagy, R. Borges, J. Brown, A. Chaudhari, J. Cook, A. Hanson, J. Johnson, K. Linthicum ...

Source: NC State University Libraries
Added: August 6, 2018

2008 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate

Applied Physics Letters, 92(2).

By: F. Al-Ajmi, R. Kolbas, J. Roberts, P. Rajagopal, J. Cook, E. Piner, K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate

Applied Physics Letters, 90(15).

Source: NC State University Libraries
Added: August 6, 2018

2006 patent

Gallium nitride material transistors and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

By: W. Nagy, R. Borges, J. Brown, A. Chaudhari, J. Cook, A. Hanson, J. Johnson, K. Linthicum ...

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke, D. Thomson, E. Carlson, P. Rajagopal & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates

Journal of Crystal Growth, 231(3), 335–341.

By: R. Davis, T. Gehrke, K. Linthicum, E. Preble, P. Rajagopal, C. Ronning, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates

Zeitschrift Fur MetallkundeAmerican Journal of Physiology, 92(2), 163–166.

By: R. Davis, T. Gehrke, K. Linthicum, T. Zheleva, P. Rajagopal, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

Journal of Crystal Growth, 225(2-4), 134–140.

By: R. Davis, T. Gehrke, K. Linthicum, T. Zheleva, E. Preble, P. Rajagopal, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1–16.

By: R. Davis, T. Gehrke, K. Linthicum, P. Rajagopal, A. Roskowski, T. Zheleva, E. Preble, C. Zorman ...

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films

Materials Science Forum, 338(3), 1471–1476.

By: R. Davis, O. Nam, T. Zheleva, T. Gehrke, K. Linthicum & P. Rajagopal

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U46–57.

By: R. Davis, T. Gehrke, K. Linthicum, T. Zheleva, P. Rajagopal, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Pendeo-epitaxial growth of gallium nitride on silicon substrates

Journal of Electronic Materials, 29(3), 306–310.

By: T. Gehrke, K. Linthicum, E. Preble, P. Rajagopal, C. Ronning, C. Zorman, M. Mehregany, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition

Materials Science Forum, 338(3), 1491–1494.

By: T. Gehrke, K. Linthicum, P. Rajagopal, E. Preble, E. Carlson, B. Robin, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Photoluminescence characterization of Mg implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.

By: C. Ronning, H. Hofsass, A. Stotzler, M. Deicher, E. Carlson, P. Hartlieb, T. Gehrke, P. Rajagopal, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 18(3), 879–881.

By: S. Smith, W. Lampert, P. Rajagopal, A. Banks, D. Thomson & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy of gallium nitride thin films

Applied Physics Letters, 75(2), 196–198.

By: K. Linthicum, T. Gehrke, D. Thomson, E. Carlson, P. Rajagopal, T. Smith, D. Batchelor, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 personal communication

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

By: T. Zheleva, S. Smith, D. Thomson, K. Linthicum, P. Rajagopal & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.37).

By: D. Thomson, T. Gehrke, K. Linthicum, P. Rajagopal & R. Davis

Source: NC State University Libraries
Added: August 6, 2018