Works (24)

2012 journal article

Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

Physica Status Solidi. A, Applications and Materials Science, 209(3), 559–564.

By: K. Lai, T. Paskova, V. Wheeler, T. Chung, J. Grenko, M. Johnson, K. Udwary, E. Preble, K. Evans

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Accurate dependence of gallium nitride thermal conductivity on dislocation density

Applied Physics Letters, 89(9).

By: C. Mion, J. Muth, E. Preble & D. Hanser

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy

Physical Review. B, Condensed Matter and Materials Physics, 71(23).

By: D. Zakharov, Z. Liliental-Weber, B. Wagner, Z. Reitmeier, E. Preble & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 chapter

Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization

In Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 (Vol. 457-460, pp. 221–224). Utikon-Zurich, Switzerland: Trans Tech Publications.

By: S. Bishop, E. Preble, C. Hallin, A. Henry, L. Storasta, H. Jacobson, B. Wagner, Z. Reitmeier, E. Janzen, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers

Journal of Crystal Growth, 258(1/2), 75–83.

By: E. Preble, P. Miraglia, A. Roskowski, W. Vetter, M. Dudley & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures

Journal of Crystal Growth, 253(1-4), 16–25.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures

Thin Solid Films, 437(37623), 140–149.

By: P. Miraglia, E. Preble, A. Roskowski, S. Einfeldt, S. Lim, Z. Liliental-Weber, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 21(1), 294–301.

By: A. McGinnis, D. Thomson, A. Banks, E. Preble, R. Davis & H. Lamb

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiG-based, cross-sectional TEM samples

Ultramicroscopy, 92(3-4), 265–271.

By: E. Preble, H. McLean, S. Kiesel, P. Miraglia, M. Albrecht & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor- cleaned GaN thin films

Journal of Applied Physics, 91(4), 2133–2137.

By: E. Preble, K. Tracy, S. Kiesel, H. McLean, P. Miraglia, R. Nemanich, R. Davis, M. Albrecht, D. Smith

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Gallium nitride materials - Progress, status, and potential roadblocks

Proceedings of the IEEE, 90(6), 993–1005.

By: R. Davis, A. Roskowski, E. Preble, J. Speck, F. B., G. J. A., . E. R., W. Carlos

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio

Journal of Crystal Growth, 236(4), 529–537.

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence

IEEE Journal of Quantum Electronics, 38(8), 1006–1016.

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Maskless pendeo-epitaxial growth of GaN films

Journal of Electronic Materials, 31(5), 421–428.

By: A. Roskowski, E. Preble, S. Einfeldt, P. Miraglia & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy

Opto-Electronics Review, 10(4), 261–270.

By: A. Roskowski, E. Preble, S. Einfeldt, P. Miraglia, J. Schuck, R. Grober, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy

Applied Physics Letters, 80(6), 953–955.

By: S. Einfeldt, A. Roskowski, E. Preble & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE

Journal of Crystal Growth, 241(1-2), 141–150.

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates

Journal of Crystal Growth, 231(3), 335–341.

By: R. Davis, T. Gehrke, K. Linthicum, E. Preble, P. Rajagopal, C. Ronning, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

Journal of Crystal Growth, 225(2-4), 134–140.

By: R. Davis, T. Gehrke, K. Linthicum, T. Zheleva, E. Preble, P. Rajagopal, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1–16.

By: R. Davis, T. Gehrke, K. Linthicum, P. Rajagopal, A. Roskowski, T. Zheleva, E. Preble, C. Zorman ...

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Strain and dislocation reduction in maskless pendeo-epitaxy GaN thin films

Physica Status Solidi. A, Applications and Materials Science, 188(2), 729–732.

By: A. Roskowski, P. Miraglia, E. Preble, S. Einfeldt, T. Stiles, R. Davis, J. Schuck, R. Grober, U. Schwarz

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Pendeo-epitaxial growth of gallium nitride on silicon substrates

Journal of Electronic Materials, 29(3), 306–310.

By: T. Gehrke, K. Linthicum, E. Preble, P. Rajagopal, C. Ronning, C. Zorman, M. Mehregany, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition

Materials Science Forum, 338(3), 1491–1494.

By: T. Gehrke, K. Linthicum, P. Rajagopal, E. Preble, E. Carlson, B. Robin, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Investigation of thickness effects on AlN coated metal tips by in situ I-V measurement

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(2), 632–634.

Source: NC State University Libraries
Added: August 6, 2018