Edward A. Preble

Works (24)

Updated: July 5th, 2023 16:02

2011 journal article

Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564.

By: K. Lai n, T. Paskova n, V. Wheeler n, T. Chung *, J. Grenko n, M. Johnson  n, K. Udwary*, E. Preble*, K. Evans*

author keywords: cathodoluminescence; MOCVD; quantum wells; TEM; RSM
Source: Web Of Science
Added: August 6, 2018

2006 journal article

Accurate dependence of gallium nitride thermal conductivity on dislocation density

APPLIED PHYSICS LETTERS, 89(9).

By: C. Mion n, J. Muth n, E. Preble* & D. Hanser*

Source: Web Of Science
Added: August 6, 2018

2005 journal article

Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy

Physical Review. B, Condensed Matter and Materials Physics, 71(23).

By: D. Zakharov, Z. Liliental-Weber, B. Wagner, Z. Reitmeier, E. Preble & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 chapter

Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization

In J. C. R. Madar & E. Blanquet (Eds.), Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 (Vol. 457-460, pp. 221–224). Utikon-Zurich, Switzerland: Trans Tech Publications.

By: S. Bishop, E. Preble, C. Hallin, A. Henry, L. Storasta, H. Jacobson, B. Wagner, Z. Reitmeier, E. Janzen, R. Davis

Ed(s): J. R. Madar & E. Blanquet

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers

JOURNAL OF CRYSTAL GROWTH, 258(1-2), 75–83.

By: E. Preble n, P. Miraglia n, A. Roskowski n, W. Vetter*, M. Dudley * & R. Davis n

author keywords: characterization; defects; X-ray diffraction; metalorganic vapor phase epitaxy; nitrides; semiconducting silicon compounds
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures

JOURNAL OF CRYSTAL GROWTH, 253(1-4), 16–25.

By: P. Miraglia*, E. Preble n, A. Roskowski n, S. Einfeldt n & R. Davis n

author keywords: atomic force microscopy; growth models; line defects; surface defects; metalorganic vapor phase epitaxy; gallium nitride
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures

THIN SOLID FILMS, 437(1-2), 140–149.

By: P. Miraglia*, E. Preble n, A. Roskowski n, S. Einfeldt*, S. Lim*, Z. Liliental-Weber *, R. Davis n

author keywords: surface defects; atomic force microscopy; metalorganic vapor phase epitaxy; indium gallium nitride
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiG-based, cross-sectional TEM samples

ULTRAMICROSCOPY, 92(3-4), 265–271.

By: E. Preble n, H. McLean n, S. Kiesel n, P. Miraglia n, M. Albrecht * & R. Davis n

author keywords: Nomarski; transmission electron microscopy; silicon carbide; transparent samples
TL;DR: Reflected light optical microscopy using a Nomarski prism and a differential interference contrast filter have been employed in concert to achieve a technique that provides an accurate color reference for thickness during the dimpling and ion milling of transparent transmission electron microscopy samples of 6H-SiC(000 1) wafers. (via Semantic Scholar)
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films

JOURNAL OF APPLIED PHYSICS, 91(4), 2133–2137.

By: E. Preble n, K. Tracy n, S. Kiesel n, H. McLean n, P. Miraglia n, R. Nemanich n, R. Davis n, M. Albrecht *, D. Smith *

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Gallium nitride materials - Progress, status, and potential roadblocks

PROCEEDINGS OF THE IEEE, 90(6), 993–1005.

By: R. Davis n, A. Roskowski*, E. Preble n, J. Speck *, B. Heying, J. Freitas *, E. Glaser *, W. Carlos*

author keywords: aluminum gallium nitride (AlGaN); defects; dislocations; dopants; electron irradiation; electron mobilities; excitons; Fourier transform infrared (FTIR) absorption; gallium nitride (GaN); heteroepitaxy; hydride vapor phase epitaxy (HVPE); lateral epitaxial overgrowth; magnetic resonance; metal-organic vapor phase epitaxy (MOVPE); Mg doping; molecular beam epitaxy (MBE); pendeoepitaxy; photoluminescence; Raman spectroscopy; recombinations; secondary ion mass spectrometry (SIMS); Si doping; two-dimensional electron gas
TL;DR: State-of-the-art Mg doping profiles and transport properties have been achieved in MBE-derived p-type GaN, and the Mg-memory effect, and heterogeneous growth, substrate uniformity, and flux control are significant challenges for MOVPE and MBE. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio

JOURNAL OF CRYSTAL GROWTH, 236(4), 529–537.

By: H. Shin n, E. Arkun n, D. Thomson n, P. Miraglia n, E. Preble n, R. Schlesser n, S. Wolter n, Z. Sitar n, R. Davis n

author keywords: decomposition; growth from vapor; single crystal growth; gallium compounds; nitrides semi-conducting III-V materials
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence

IEEE JOURNAL OF QUANTUM ELECTRONICS, 38(8), 1006–1016.

By: A. Roskowski n, E. Preble n, S. Einfeldt n, P. Miraglia n & R. Davis n

author keywords: chemical vapor deposition; semiconductor growth; thin films; topography
Source: Web Of Science
Added: August 6, 2018

2002 article

Maskless pendeo-epitaxial growth of GaN films

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002, May). JOURNAL OF ELECTRONIC MATERIALS, Vol. 31, pp. 421–428.

By: A. Roskowski n, E. Preble n, S. Einfeldt n, P. Miraglia n & R. Davis n

author keywords: pendeo-epitaxy (PE); gallium nitride (GaN); metalorganic vapor phase epitaxy (MOVPE); atomic force microscopy (AFM); x-ray diffraction (XRD); photoluminescence (PL)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy

Opto-Electronics Review, 10(4), 261–270.

By: A. Roskowski, E. Preble, S. Einfeldt, P. Miraglia, J. Schuck, R. Grober, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy

APPLIED PHYSICS LETTERS, 80(6), 953–955.

By: S. Einfeldt  n, A. Roskowski n, E. Preble n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(1), 294–301.

By: A. McGinnis n, D. Thomson n, A. Banks n, E. Preble n, R. Davis n & H. Lamb n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE

JOURNAL OF CRYSTAL GROWTH, 241(1-2), 141–150.

By: A. Roskowski n, P. Miraglia n, E. Preble n, S. Einfeldt n & R. Davis n

author keywords: characterization; defects; surface structure; metalorganic vapor phase epitaxy; pendeoepitaxy; semiconducting gallium compounds
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2001 article

Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates

Davis, R. F., Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., … Mehregany, M. (2001, October). JOURNAL OF CRYSTAL GROWTH, Vol. 231, pp. 335–341.

By: R. Davis n, T. Gehrke n, K. Linthicum n, E. Preble n, P. Rajagopal n, C. Ronning*, C. Zorman *, M. Mehregany *

author keywords: characterization; defects; dislocations; X-ray diffraction; selective growth; metalorganic chemical vapor deposition metalorganic vapor phase epitaxy; pendeoepitaxy; gallium compounds; nitrides; silicon; semiconducting gallium compounds; scanning electron microscopy; transmission electron microscopy
Source: Web Of Science
Added: August 6, 2018

2001 article

Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Preble, E. A., Rajagopal, P., … Mehregany, M. (2001, May). JOURNAL OF CRYSTAL GROWTH, Vol. 225, pp. 134–140.

By: R. Davis n, T. Gehrke n, K. Linthicum*, T. Zheleva n, E. Preble n, P. Rajagopal*, C. Zorman *, M. Mehregany *

author keywords: crystal morphology; defects; interfaces; pendeoepitaxy; nitrides; semiconducting gallium compounds
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1–16.

By: R. Davis, T. Gehrke, K. Linthicum, P. Rajagopal, A. Roskowski, T. Zheleva, E. Preble, C. Zorman ...

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Strain and dislocation reduction in maskless pendeo-epitaxy GaN thin films

Physica Status Solidi. A, Applications and Materials Science, 188(2), 729–732.

By: A. Roskowski n, P. Miraglia n, E. Preble n, S. Einfeldt  n, T. Stiles  n, R. Davis n, J. Schuck*, R. Grober*, U. Schwarz *

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Pendeo-epitaxial growth of gallium nitride on silicon substrates

JOURNAL OF ELECTRONIC MATERIALS, 29(3), 306–310.

By: T. Gehrke n, K. Linthicum n, E. Preble n, P. Rajagopal n, C. Ronning n, C. Zorman *, M. Mehregany *, R. Davis n

author keywords: Pendeo epitaxy; lateral epitaxy; gallium nitride (GaN); silicon substrates; selective growth; coalescence; metalorganic vapor phase epitaxy (MOVPE)
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition

Materials Science Forum, 338(3), 1491–1494.

By: T. Gehrke, K. Linthicum, P. Rajagopal, E. Preble, E. Carlson, B. Robin, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 article

Investigation of thickness effects on AlN coated metal tips by in situ I-V measurement

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 17, pp. 632–634.

By: D. Kang n, . Zhirnov *, G. Wojak n, E. Preble n, W. Choi*, J. Hren n, J. Cuomo n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

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