Works (24)
Updated: July 5th, 2023 16:02
2012 journal article
Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564.
author keywords: cathodoluminescence; MOCVD; quantum wells; TEM; RSM
Source: Web Of Science
Added: August 6, 2018
2006 journal article
Accurate dependence of gallium nitride thermal conductivity on dislocation density
APPLIED PHYSICS LETTERS, 89(9).
Source: Web Of Science
Added: August 6, 2018
2005 journal article
Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy
Physical Review. B, Condensed Matter and Materials Physics, 71(23).
Source: NC State University Libraries
Added: August 6, 2018
2004 chapter
Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization
In J. C. R. Madar & E. Blanquet (Eds.), Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 (Vol. 457-460, pp. 221–224). Utikon-Zurich, Switzerland: Trans Tech Publications.
Ed(s): J. R. Madar & E. Blanquet
Source: NC State University Libraries
Added: August 6, 2018
2003 journal article
Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers
JOURNAL OF CRYSTAL GROWTH, 258(1-2), 75–83.
author keywords: characterization; defects; X-ray diffraction; metalorganic vapor phase epitaxy; nitrides; semiconducting silicon compounds
UN Sustainable Development Goal Categories
14. Life Below Water
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2003 journal article
Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures
JOURNAL OF CRYSTAL GROWTH, 253(1-4), 16–25.
author keywords: atomic force microscopy; growth models; line defects; surface defects; metalorganic vapor phase epitaxy; gallium nitride
Source: Web Of Science
Added: August 6, 2018
2003 journal article
Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures
THIN SOLID FILMS, 437(1-2), 140–149.
author keywords: surface defects; atomic force microscopy; metalorganic vapor phase epitaxy; indium gallium nitride
UN Sustainable Development Goal Categories
14. Life Below Water
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2003 journal article
Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(1), 294–301.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2002 journal article
Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiG-based, cross-sectional TEM samples
ULTRAMICROSCOPY, 92(3-4), 265–271.
author keywords: Nomarski; transmission electron microscopy; silicon carbide; transparent samples
TL;DR:
Reflected light optical microscopy using a Nomarski prism and a differential interference contrast filter have been employed in concert to achieve a technique that provides an accurate color reference for thickness during the dimpling and ion milling of transparent transmission electron microscopy samples of 6H-SiC(000 1) wafers.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
3. Good Health and Well-being
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2002 journal article
Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films
JOURNAL OF APPLIED PHYSICS, 91(4), 2133–2137.
Source: Web Of Science
Added: August 6, 2018
2002 journal article
Gallium nitride materials - Progress, status, and potential roadblocks
PROCEEDINGS OF THE IEEE, 90(6), 993–1005.
author keywords: aluminum gallium nitride (AlGaN); defects; dislocations; dopants; electron irradiation; electron mobilities; excitons; Fourier transform infrared (FTIR) absorption; gallium nitride (GaN); heteroepitaxy; hydride vapor phase epitaxy (HVPE); lateral epitaxial overgrowth; magnetic resonance; metal-organic vapor phase epitaxy (MOVPE); Mg doping; molecular beam epitaxy (MBE); pendeoepitaxy; photoluminescence; Raman spectroscopy; recombinations; secondary ion mass spectrometry (SIMS); Si doping; two-dimensional electron gas
TL;DR:
State-of-the-art Mg doping profiles and transport properties have been achieved in MBE-derived p-type GaN, and the Mg-memory effect, and heterogeneous growth, substrate uniformity, and flux control are significant challenges for MOVPE and MBE.
(via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018
2002 journal article
Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio
JOURNAL OF CRYSTAL GROWTH, 236(4), 529–537.
author keywords: decomposition; growth from vapor; single crystal growth; gallium compounds; nitrides semi-conducting III-V materials
Source: Web Of Science
Added: August 6, 2018
2002 journal article
Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence
IEEE JOURNAL OF QUANTUM ELECTRONICS, 38(8), 1006–1016.
author keywords: chemical vapor deposition; semiconductor growth; thin films; topography
Source: Web Of Science
Added: August 6, 2018
2002 article
Maskless pendeo-epitaxial growth of GaN films
Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002, May). JOURNAL OF ELECTRONIC MATERIALS, Vol. 31, pp. 421–428.
author keywords: pendeo-epitaxy (PE); gallium nitride (GaN); metalorganic vapor phase epitaxy (MOVPE); atomic force microscopy (AFM); x-ray diffraction (XRD); photoluminescence (PL)
Source: Web Of Science
Added: August 6, 2018
2002 journal article
Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy
Opto-Electronics Review, 10(4), 261–270.
Source: NC State University Libraries
Added: August 6, 2018
2002 journal article
Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy
APPLIED PHYSICS LETTERS, 80(6), 953–955.
Source: Web Of Science
Added: August 6, 2018
2002 journal article
Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE
JOURNAL OF CRYSTAL GROWTH, 241(1-2), 141–150.
author keywords: characterization; defects; surface structure; metalorganic vapor phase epitaxy; pendeoepitaxy; semiconducting gallium compounds
UN Sustainable Development Goal Categories
14. Life Below Water
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2001 article
Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates
Davis, R. F., Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., … Mehregany, M. (2001, October). JOURNAL OF CRYSTAL GROWTH, Vol. 231, pp. 335–341.
author keywords: characterization; defects; dislocations; X-ray diffraction; selective growth; metalorganic chemical vapor deposition metalorganic vapor phase epitaxy; pendeoepitaxy; gallium compounds; nitrides; silicon; semiconducting gallium compounds; scanning electron microscopy; transmission electron microscopy
Source: Web Of Science
Added: August 6, 2018
2001 article
Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization
Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Preble, E. A., Rajagopal, P., … Mehregany, M. (2001, May). JOURNAL OF CRYSTAL GROWTH, Vol. 225, pp. 134–140.
author keywords: crystal morphology; defects; interfaces; pendeoepitaxy; nitrides; semiconducting gallium compounds
Source: Web Of Science
Added: August 6, 2018
2001 journal article
Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates
MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1–16.
Source: NC State University Libraries
Added: August 6, 2018
2001 journal article
Strain and dislocation reduction in maskless pendeo-epitaxy GaN thin films
Physica Status Solidi. A, Applications and Materials Science, 188(2), 729–732.
Source: NC State University Libraries
Added: August 6, 2018
2000 journal article
Pendeo-epitaxial growth of gallium nitride on silicon substrates
JOURNAL OF ELECTRONIC MATERIALS, 29(3), 306–310.
author keywords: Pendeo epitaxy; lateral epitaxy; gallium nitride (GaN); silicon substrates; selective growth; coalescence; metalorganic vapor phase epitaxy (MOVPE)
Source: Web Of Science
Added: August 6, 2018
2000 journal article
Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition
Materials Science Forum, 338(3), 1491–1494.
Source: NC State University Libraries
Added: August 6, 2018
1999 article
Investigation of thickness effects on AlN coated metal tips by in situ I-V measurement
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 17, pp. 632–634.
UN Sustainable Development Goal Categories
3. Good Health and Well-being
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
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