Edward A. Preble

Lai, K. Y., Paskova, T., Wheeler, V. D., Chung, T. Y., Grenko, J. A., Johnson, M. A. L., … Evans, K. R. (2012). Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564. https://doi.org/10.1002/pssa.201127345

Mion, C., Muth, J. F., Preble, E. A., & Hanser, D. (2006). Accurate dependence of gallium nitride thermal conductivity on dislocation density. APPLIED PHYSICS LETTERS, 89(9). https://doi.org/10.1063/1.2335972

Zakharov, D. N., Liliental-Weber, Z., Wagner, B., Reitmeier, Z. J., Preble, E. A., & Davis, R. F. (2005). Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy. Physical Review. B, Condensed Matter and Materials Physics, 71(23).

Bishop, S. M., Preble, E. A., Hallin, C., Henry, A., Storasta, L., Jacobson, H., … Davis, R. F. (2004). Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization. In J. C. R. Madar & E. Blanquet (Eds.), Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 (Vol. 457-460, pp. 221–224). Utikon-Zurich, Switzerland: Trans Tech Publications.

Preble, E. A., Miraglia, P. Q., Roskowski, A. M., Vetter, W. M., Dudley, M., & Davis, R. F. (2003). Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers. JOURNAL OF CRYSTAL GROWTH, 258(1-2), 75–83. https://doi.org/10.1016/S0022-0248(03)01515-X

Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., & Davis, R. F. (2003). Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures. JOURNAL OF CRYSTAL GROWTH, 253(1-4), 16–25. https://doi.org/10.1016/S0022-0248(03)00970-9

Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., Lim, S. H., Liliental-Weber, Z., & Davis, R. F. (2003). Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures. THIN SOLID FILMS, 437(1-2), 140–149. https://doi.org/10.1016/S0040-6090(03)00611-4

McGinnis, A. J., Thomson, D., Banks, A., Preble, E., Davis, R. F., & Lamb, H. H. (2003). Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(1), 294–301. https://doi.org/10.1116/1.1532736

Preble, E. A., McLean, H. A., Kiesel, S. M., Miraglia, P., Albrecht, M., & Davis, R. F. (2002). Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiG-based, cross-sectional TEM samples. ULTRAMICROSCOPY, 92(3-4), 265–271. https://doi.org/10.1016/S0304-3991(02)00142-0

Preble, E. A., Tracy, K. M., Kiesel, S., McLean, H., Miraglia, P. Q., Nemanich, R. J., … Smith, D. J. (2002). Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films. JOURNAL OF APPLIED PHYSICS, 91(4), 2133–2137. https://doi.org/10.1063/1.1432127

Davis, R. F., Roskowski, A. M., Preble, E. A., Speck, J. S., Heying, B., Freitas, J. A., … Carlos, W. E. (2002). Gallium nitride materials - Progress, status, and potential roadblocks. PROCEEDINGS OF THE IEEE, 90(6), 993–1005. https://doi.org/10.1109/JPROC.2002.1021564

Shin, H., Arkun, E., Thomson, D. B., Miraglia, P., Preble, E., Schlesser, R., … Davis, R. F. (2002). Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio. JOURNAL OF CRYSTAL GROWTH, 236(4), 529–537. https://doi.org/10.1016/S0022-0248(02)00825-4

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002). Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence. IEEE JOURNAL OF QUANTUM ELECTRONICS, 38(8), 1006–1016. https://doi.org/10.1109/JQE.2002.801005

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002, May). Maskless pendeo-epitaxial growth of GaN films. JOURNAL OF ELECTRONIC MATERIALS, Vol. 31, pp. 421–428. https://doi.org/10.1007/s11664-002-0095-6

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., Schuck, J., Grober, R., & Davis, R. F. (2002). Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy. Opto-Electronics Review, 10(4), 261–270.

Einfeldt, S., Roskowski, A. M., Preble, E. A., & Davis, R. F. (2002). Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy. APPLIED PHYSICS LETTERS, 80(6), 953–955. https://doi.org/10.1063/1.1448145

Roskowski, A. M., Miraglia, P. Q., Preble, E. A., Einfeldt, S., & Davis, R. F. (2002). Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE. JOURNAL OF CRYSTAL GROWTH, 241(1-2), 141–150. https://doi.org/10.1016/S0022-0248(02)00943-0

Davis, R. F., Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., … Mehregany, M. (2001, October). Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates. JOURNAL OF CRYSTAL GROWTH, Vol. 231, pp. 335–341. https://doi.org/10.1016/S0022-0248(01)01462-2

Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Preble, E. A., Rajagopal, P., … Mehregany, M. (2001, May). Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization. JOURNAL OF CRYSTAL GROWTH, Vol. 225, pp. 134–140. https://doi.org/10.1016/S0022-0248(01)00836-3

Davis, R. F., Gehrke, T., Linthicum, K. J., Rajagopal, P., Roskowski, A. M., Zheleva, T., … Grober, R. (2001). Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates. MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1–16.

Roskowski, A. M., Miraglia, P. Q., Preble, E. A., Einfeldt, S., Stiles, T., Davis, R. F., … Schwarz, U. (2001). Strain and dislocation reduction in maskless pendeo-epitaxy GaN thin films. Physica Status Solidi. A, Applications and Materials Science, 188(2), 729–732. https://doi.org/10.1002/1521-396x(200112)188:2<729::aid-pssa729>3.0.co;2-w

Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., Zorman, C., … Davis, R. F. (2000). Pendeo-epitaxial growth of gallium nitride on silicon substrates. JOURNAL OF ELECTRONIC MATERIALS, 29(3), 306–310. https://doi.org/10.1007/s11664-000-0068-6

Gehrke, T., Linthicum, K. J., Rajagopal, P., Preble, E. A., Carlson, E. P., Robin, B. M., & Davis, R. F. (2000). Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition. Materials Science Forum, 338(3), 1491–1494.

Kang, D. H., Zhirnov, VV, Wojak, G. J., Preble, E. A., Choi, W. B., Hren, J. J., & Cuomo, J. J. (1999). Investigation of thickness effects on AlN coated metal tips by in situ I-V measurement. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 17, pp. 632–634. https://doi.org/10.1116/1.590608