Philip J. Hartlieb Coppa, B. J., Fulton, C. C., Hartlieb, P. J., Davis, R. F., Rodriguez, B. J., Shields, B. J., & Nemanich, R. J. (2004). In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces. JOURNAL OF APPLIED PHYSICS, 95(10), 5856–5864. https://doi.org/10.1063/1.1695596 Tracy, K. M., Hartlieb, P. J., Einfeldt, S., Davis, R. F., Hurt, E. H., & Nemanich, R. J. (2003). Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag. JOURNAL OF APPLIED PHYSICS, 94(6), 3939–3948. https://doi.org/10.1063/1.1598630 Smith, T. P., Mecouch, W. J., Miraglia, P. Q., Roskowski, A. M., Hartlieb, P. J., & Davis, R. F. (2003). Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy. JOURNAL OF CRYSTAL GROWTH, 257(3-4), 255–262. https://doi.org/10.1016/S0022-0248(03)01469-6 Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2003, March 15). Response to "Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]". JOURNAL OF APPLIED PHYSICS, Vol. 93, pp. 3679–3679. https://doi.org/10.1063/1.1542911 Hartlieb, P. J., Roskowski, A., Davis, R. F., & Nemanich, R. J. (2002). Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN. JOURNAL OF APPLIED PHYSICS, 91(11), 9151–9160. https://doi.org/10.1063/1.1471578 Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2002). Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces. JOURNAL OF APPLIED PHYSICS, 91(2), 732–738. https://doi.org/10.1063/1.1424060 Ronning, C., Hofsass, H., Stotzler, A., Deicher, M., Carlson, E. P., Hartlieb, P. J., … Davis, R. F. (2000). Photoluminescence characterization of Mg implanted GaN. MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628. Ronning, C., Linthicum, K. J., Carlson, E. P., Hartlieb, P. J., Thomson, D. B., Gehrke, T., & Davis, R. F. (1999). Characterization of Be-implanted GaN annealed at high temperatures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).