Kieran M. Tracy

Hartman, J. D., Roskowski, A. M., Reitmeier, Z. J., Tracy, K. M., Davis, R. F., & Nemanich, R. J. (2003). Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AlN films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(2), 394–400. https://doi.org/10.1116/1.1539080

Tracy, K. M., Hartlieb, P. J., Einfeldt, S., Davis, R. F., Hurt, E. H., & Nemanich, R. J. (2003). Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag. JOURNAL OF APPLIED PHYSICS, 94(6), 3939–3948. https://doi.org/10.1063/1.1598630

Cook, T. E., Fulton, C. C., Mecouch, W. J., Tracy, K. M., Davis, R. F., Hurt, E. H., … Nemanich, R. J. (2003). Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004. https://doi.org/10.1063/1.1559424

Linthicum, K. J., Gehrke, T., Davis, R. F., Thomson, D. B., & Tracy, K. M. (2003). Methods of fabricating gallium nitride microelectronic layers on silicon layers. Washington, DC: U.S. Patent and Trademark Office.

Tracy, K. M., Mecouch, W. J., Davis, R. F., & Nemanich, R. J. (2003). Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001). JOURNAL OF APPLIED PHYSICS, 94(5), 3163–3172. https://doi.org/10.1063/1.1596369

Preble, E. A., Tracy, K. M., Kiesel, S., McLean, H., Miraglia, P. Q., Nemanich, R. J., … Smith, D. J. (2002). Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films. JOURNAL OF APPLIED PHYSICS, 91(4), 2133–2137. https://doi.org/10.1063/1.1432127

Platow, W., Wood, D. K., Tracy, K. M., Burnette, J. E., Nemanich, R. J., & Sayers, D. E. (2001). Formation of cobalt disilicide films on (root 3 x root 3)6H-SiC(0001). PHYSICAL REVIEW B, 63(11). https://doi.org/10.1103/physrevb.63.115312

Linthicum, K. J., Gehrke, T., Davis, R. F., Thomson, D. B., & Tracy, K. M. (2001). Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby. Washington, DC: U.S. Patent and Trademark Office.

Ward, B. L., Hartman, J. D., Hurt, E. H., Tracy, K. M., Davis, R. F., & Nemanich, R. J. (2000). Schottky barrier height and electron affinity of titanium on AIN. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 2082–2087. https://doi.org/10.1116/1.1303733

Linthicum, K. J., Gehrke, T., Thomson, D. B., Tracy, K. M., Carlson, E. P., Smith, T. P., … Davis, R. F. (1999). Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).