@article{smith_mclean_smith_miraglia_roskowski_davis_2004, title={Growth and characterization of ZnO thin films on GaN epilayers}, volume={33}, ISSN={["1543-186X"]}, DOI={10.1007/s11664-004-0249-9}, number={7}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Smith, TP and McLean, HA and Smith, DJ and Miraglia, PQ and Roskowski, AM and Davis, RF}, year={2004}, month={Jul}, pages={826–832} }
 @article{smith_mclean_smith_davis_2004, title={Homoepitaxial growth of (0001)- and (000(1)over-bar)-oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization}, volume={265}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2004.02.096}, abstractNote={Homoepitaxial ZnO films have been grown via metalorganic vapor-phase epitaxy on O- and Zn-terminated basal-plane-oriented ZnO substrates. Maps of on-axis X-ray rocking curves obtained over 2-in-diameter ZnO{0 0 0 1} wafers, diced from boules produced by vapor phase transport, revealed well-defined areas that ranged from <50 to >1050 arcsec FWHM, indicating the presence of tilted domains. This macrostructure was manifested in all the homoepitaxial ZnO films deposited on these wafers. The films grown on O-terminated ZnO surfaces were initially dense. However, they changed to a textured polycrystalline microstructure after ≈100 nm and possessed a surface roughness of 7.3 nm. By contrast, the films grown on the Zn-terminated surface under the same conditions were fully dense, without texture and appeared to be monocrystalline with a significantly improved surface roughness of 3.4 nm. Cross-sectional transmission electron microscopy of the wafers revealed high densities of edge dislocations and stacking faults with associated Frank partial dislocations.}, number={3-4}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Smith, TP and McLean, H and Smith, DJ and Davis, RF}, year={2004}, month={May}, pages={390–398} }
 @article{smith_mecouch_miraglia_roskowski_hartlieb_davis_2003, title={Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy}, volume={257}, ISSN={["1873-5002"]}, DOI={10.1016/S0022-0248(03)01469-6}, abstractNote={Zinc oxide thin films have been grown via metalorganic vapor phase epitaxy at 450°C and 250 Torr total pressure on O-terminated areas and micro-regions of native oxide formed on GaN(0 0 0 1) epilayers during exposure to the oxygen reactant. Analyses of the Ga3d core level spectra acquired from films grown for progressively longer times and comparisons of these data with both thermodynamic models of growth processes and associated atomic force micrographs revealed that the ZnO nucleated and grew via the Stranski–Krastanov mode. Considerations of (1) differences in surface energetics of the polar (0 0 0 1) surfaces of ZnO and GaN and that of the Ga-based oxide as well as (2) the relatively low stress generated by the moderate lattice mismatches in the a-axis lattice parameters of these compounds supported the observed growth mode. The shifts in the position of the Ga3d core level with increasing deposition time and decreasing peak intensity were caused by surface charging and increasing sampling volumes of the Ga-based oxide as well as the growing ZnO layer. The island/ocean morphology of the Ga-based oxide controlled the morphology of the initial ZnO layer, which, in turn controlled the locations and the morphologies of the subsequently nucleated ZnO islands. Scanning electron microscopy of thicker ZnO films revealed a highly textured microstructure.}, number={3-4}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Smith, TP and Mecouch, WJ and Miraglia, PQ and Roskowski, AM and Hartlieb, PJ and Davis, RF}, year={2003}, month={Oct}, pages={255–262} }
 @article{linthicum_gehrke_thomson_carlson_rajagopal_smith_batchelor_davis_1999, title={Pendeo-epitaxy of gallium nitride thin films}, volume={75}, DOI={10.1063/1.124317}, abstractNote={Pendeoepitaxy, a form of selective lateral growth of GaN thin films has been developed using GaN/AlN/6H–SiC(0001) substrates and produced by organometallic vapor phase epitaxy. Selective lateral growth is forced to initiate from the (112̄0) GaN sidewalls of etched GaN seed forms by incorporating a silicon nitride seed mask and employing the SiC substrate as a pseudomask. Coalescence over and between the seed forms was achieved. Transmission electron microscopy revealed that all vertically threading defects stemming from the GaN/AlN and AlN/SiC interfaces are contained within the seed forms and a substantial reduction in the dislocation density of the laterally grown GaN. Atomic force microscopy analysis of the (112̄0) face of discrete pendeoepitaxial structures revealed a root mean square roughness of 0.98 Å. The pendeoepitaxial layer photoluminescence band edge emission peak was observed to be 3.454 eV and is blueshifted by 12 meV as compared to the GaN seed layer.}, number={2}, journal={Applied Physics Letters}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Smith, T. and Batchelor, D. and Davis, R.}, year={1999}, pages={196–198} }
 @article{linthicum_gehrke_thomson_tracy_carlson_smith_zheleva_zorman_mehregany_davis_1999, title={Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques}, volume={4S1}, number={G4.9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Tracy, K. M. and Carlson, E. P. and Smith, T. P. and Zheleva, T. S. and Zorman, C. A. and Mehregany, M. and Davis, R. F.}, year={1999} }