Indranil De

Works (4)

Updated: April 11th, 2023 10:13
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2000 article

Design and integration considerations for end-of-the roadmap ultrashallow junctions

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 338–345.

By: C. Osburn, I. De, K. Yee & A. Srivastava

Source: Web Of Science
Added: August 6, 2018

2000 journal article

Impact of gate workfunction on device performance at the 50 nm technology node

SOLID-STATE ELECTRONICS, 44(6), 1077–1080.

By: I. De, D. Johri n, A. Srivastava & C. Osburn

author keywords: gate workfunction; super steep retrograde; channel engineering
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L-eff and R-sd of LDD MOSFET's

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(4), 891–895.

By: K. Ahmed, I. De, C. Osburn, J. Wortman & J. Hauser

author keywords: effective channel length; LDD; mobility; MOSFET; series resistance; shift and ratio; thin oxides
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Impact of super-steep-retrograde channel doping profiles on the performance of scaled devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(8), 1711–1717.

By: I. De & C. Osburn

author keywords: channel engineering; MOS device design
Source: Web Of Science
Added: August 6, 2018