Works (4)

Updated: July 5th, 2023 16:02

2000 article

Design and integration considerations for end-of-the roadmap ultrashallow junctions

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 338–345.

By: C. Osburn n, I. De n, K. Yee n & A. Srivastava n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Impact of gate workfunction on device performance at the 50 nm technology node

SOLID-STATE ELECTRONICS, 44(6), 1077–1080.

By: I. De n, D. Johri n, A. Srivastava n & C. Osburn n

co-author countries: United States of America 🇺🇸
author keywords: gate workfunction; super steep retrograde; channel engineering
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L-eff and R-sd of LDD MOSFET's

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(4), 891–895.

By: K. Ahmed n, I. De n, C. Osburn n, J. Wortman n & J. Hauser n

co-author countries: United States of America 🇺🇸
author keywords: effective channel length; LDD; mobility; MOSFET; series resistance; shift and ratio; thin oxides
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Impact of super-steep-retrograde channel doping profiles on the performance of scaled devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(8), 1711–1717.

By: I. De n & C. Osburn n

co-author countries: United States of America 🇺🇸
author keywords: channel engineering; MOS device design
Source: Web Of Science
Added: August 6, 2018

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