@article{kvit_yankov_duscher_rozgonyi_glasko_2003, title={Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon}, volume={83}, ISSN={["0003-6951"]}, DOI={10.1063/1.1601678}, abstractNote={We have examined nanovoid formation, Fe gettering, and Fe clustering phenomena occurring in epitaxial silicon layers implanted with MeV Si ions. Insights into these phenomena as a function of depth have been gained from detailed analyses by Z-contrast imaging in conjunction with electron energy-loss spectroscopy. Our work has shown at the nanoscale structural and chemical levels that the defects produced by MeV self-ion implantation between the surface and the ion projected range Rp (i.e., in the so-called Rp/2 region) are voids, which provide extremely efficient and aggressive metallic impurity gettering. It has been proposed that the gettering does not occur via chemisorption or silicidation layering on the internal surface of the void walls, as in the well-known case of helium-induced cavities, but rather proceeds in a mode of metal–metal atom binding in the vicinity of the Rp/2 voids.}, number={7}, journal={APPLIED PHYSICS LETTERS}, author={Kvit, A and Yankov, RA and Duscher, G and Rozgonyi, G and Glasko, JM}, year={2003}, month={Aug}, pages={1367–1369} }
 @article{rozgonyi_glasko_beaman_koveshnikov_2000, title={Gettering issues using MeV ion implantation}, volume={72}, ISSN={["0921-5107"]}, DOI={10.1016/s0921-5107(99)00506-1}, abstractNote={Abstract MeV implantation has generated interest as a gettering option in silicon since it was established that under the appropriate conditions of irradiation fluence, substrate oxygen content, and annealing treatment, at least two distinct regions, denoted as R p and R p /2, getter impurities (M. Tamura, T. Ando, O.K., Nucl. Instrum. Methods Phys. Res. B 59/60 (1991) 572; A. Agarwal, K. Christensen, D. Venables, D.M. Maher, G.A. Rozgonyi, Appl. Phys. Lett. 69 (1996) 3899). In the present work we report on the thermal stability of Fe gettered at R p due to MeV ion implantation-induced dislocation loops in Fe contaminated CZ Si wafers, and an activation energy for the release of gettered Fe of 0.80 eV. It has also been determined that, the gettering mechanism in the R p /2 region in epitaxial Si for high MeV ion doses (≈5×10 15 Ge cm −2 ) is vacancy-related, since TEM analysis revealed 4–11-nm diameter voids. Under the annealing conditions studied, these voids were found to be more efficient at Fe capture than R p defects.}, number={2-3}, journal={MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY}, author={Rozgonyi, GA and Glasko, JM and Beaman, KL and Koveshnikov, SV}, year={2000}, month={Mar}, pages={87–92} }