@article{soman_reisman_temple_2000, title={Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis I. The system Si-Ge-Cl-H}, volume={147}, ISSN={["0013-4651"]}, DOI={10.1149/1.1394065}, abstractNote={To investigate selective area chemical vapor deposition of thin films by the alternating cyclic (A.C.) process, a thermodynamic analysis has been performed over extensive temperature, pressure, input gas ratio, and deposited solid composition ranges. In the A.C. approach thin film deposition via the hydrogen reduction of and is followed cyclically by etching of spurious nuclei from mask regions via an embedded disproportionation reaction. The embedded disproportionation reaction between , , and the nuclei is made dominant when the hydrogen flow is interrupted cyclically. The thermodynamic calculations have been carried out via the computer program, SOLGASMIX, which is based on the minimization of the system's Gibbs free energy, and also using a first principles approach as an integrity check. These calculations have indicated that selective area deposition of thin films by the A.C. method is feasible. The analysis has also defined the parameter space in which to conduct the selective area deposition using the A.C. process. © 2000 The Electrochemical Society. All rights reserved.}, number={11}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Soman, R and Reisman, A and Temple, D}, year={2000}, month={Nov}, pages={4333–4341} }
 @article{soman_reisman_temple_2000, title={Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis II. The system Si-Ge-Cl-H-Ar}, volume={147}, ISSN={["0013-4651"]}, DOI={10.1149/1.1394066}, abstractNote={To investigate selective area chemical vapor deposition of Si 1-x Ge x thin films by the alternating cyclic (A.C.) process, a thermodynamic analysis has been performed over extensive temperature, pressure, input gas ratio, and deposited solid composition ranges. In the A.C. approach Si 1-x Ge x thin film deposition via the hydrogen reduction of SiCl 4 and GeCl 4 is followed cyclically by etching of spurious nuclei from mask regions via an embedded disproportionation reaction. The embedded disproportionation reaction between SiCl 4 , GeCl 4 , and the Si 1-x Ge x nuclei is made dominant when the hydrogen flow is interrupted cyclically. The thermodynamic calculations have been carried out via the computer program, SOLGASMIX, which is based on the minimization of the system's Gibbs free energy, and also using a first principles approach as an integrity check. These calculations have indicated that selective area deposition of Si 1-x Ge x thin films by the A.C method is feasible. The analysis has also defined the parameter space in which to conduct the selective area deposition using the A.C. process.}, number={11}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Soman, R and Reisman, A and Temple, D}, year={2000}, month={Nov}, pages={4342–4344} }
 @article{soman_reisman_temple_alberti_2000, title={Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data I. Deposition parameters}, volume={147}, ISSN={["0013-4651"]}, DOI={10.1149/1.1393445}, abstractNote={Alternating cyclic (AC). selective area deposition of Si 1-x Ge x thin and thick films 0.1 to 3.5 μm, via the reaction of SiCl 4 . GeCl 4 , and H 2 using Ar as a carrier gas, was earned out in a hot-wall, low pressure epitaxial reactor, using oxide masked silicon wafers. The AC process is based on the existence of an embedded disproportionation reaction within the overall deposition chemistry, which provides an effective mechanism for preventing the formation of nuclei in the areas where deposition is not desired. This disproportionation reaction is made dominant cyclically, by pulsing the hydrogen on and off periodically, in order to eliminate incipient nucleation. Experiments were carried out over a large portion of the available parameter space, as determined by extensive thermodynamic analyses, using a reference non-AC process as a control, and comparing the results with different AC frequencies. The [GeCl 4 /(SiCl 4 + GeCl 4 )] mole fractions used were 0.0012, 0.0025, 0.005, 0.01, 0.02, 0.03, and 0.05, the temperature was varied from 700 to 950°C, and the Ar/H 2 ratio varied from 1 to 9. The range of alloy composition deposited was from 0 to 30 mol %, Ge. Total gas flow rate was varied from 2 standard liters per min (slpm) to 20 slpm to modulate gas hydrodynamics. To varying degrees, various experimental conditions influenced the tendency for formation of spurious nuclei on the oxide surface. However, under all conditions, the AC technique was capable of preventing the formation of spurious nuclei on the oxide, guaranteeing essentially 100% selectivity control, for both nonimplanted wafers and ion-implanted wafers.}, number={5}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Soman, R and Reisman, A and Temple, D and Alberti, R}, year={2000}, month={May}, pages={1847–1853} }
 @article{soman_reisman_temple_alberti_pace_2000, title={Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data II. Morphology and composition as a function of deposition parameters}, volume={147}, ISSN={["0013-4651"]}, DOI={10.1149/1.1393446}, abstractNote={Selective area deposition of Si 1-x Ge x thin films, with x as large as 0.63, on oxide masked silicon wafers, was carried out in a hot-wall, low pressure chemical vapor deposition system, using an alternating cyclic method described in the companion paper, Part I. In order to remove any Si 1-x Ge x previously deposited on the walls of the system, an HCl clean of the system was performed prior to every deposition thereby enabling good control over the composition of the deposited Si 1-xGex films. The effect of various processing conditions, such as deposition temperature, input gas phase composition, and deposition time on the resulting Si 1-x Ge x film composition, morphology, and crystalline perfection were studied. For a particular film composition, there exists a morphological thickness, t m at a particular deposition temperature, at which the Si 1-x Ge x films make a transition from smooth to rough morphology. The rough films are in a relaxed state and exhibit three-dimensional growth. Below t m , the films exhibit a smooth morphology. With lowering of deposition temperature while keeping all other conditions constant, the Si 1-x Ge x films become richer in Ge. Thermodynamic calculations were found to be in agreement with this observation. Energy dispersive X-ray spectroscopy using an environmental scanning electron microscope technique was used for composition determination purpose and transmission electron microscopy was performed to study the crystalline quality of the selectively deposited Si 1-x Ge x films.}, number={5}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Soman, R and Reisman, A and Temple, D and Alberti, R and Pace, C}, year={2000}, month={May}, pages={1854–1858} }
 @article{soman_reisman_temple_1999, title={An alternative derivation for the equilibrium constant of binary solid solution-vapor systems}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392557}, abstractNote={For an ideal Si-Ge solid solution deposited from an ideal vapor phase in a two phase solid solution-vapor system, the equilibrium constant, K Si SS , for the global process has been derived in terms of the equilibrium constant for the deposition of a pure solid phase, K Si S . and the solid solution mole fraction of silicon species, N Si SS , and has been shown to be K Si SS = K Si S /N Si SS Derivation of the relationship for the germanium species is symmetrical to that for silicon and given by K Ge SS = K Ge S /N Ge SS = K Ge S /(1 - N Si SS ).}, number={10}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Soman, R and Reisman, A and Temple, D}, year={1999}, month={Oct}, pages={3817–3818} }