Ravindra G. Soman

Soman, R., Reisman, A., & Temple, D. (2000). Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis I. The system Si-Ge-Cl-H. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(11), 4333–4341. https://doi.org/10.1149/1.1394065

Soman, R., Reisman, A., & Temple, D. (2000). Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis II. The system Si-Ge-Cl-H-Ar. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(11), 4342–4344. https://doi.org/10.1149/1.1394066

Soman, R., Reisman, A., Temple, D., & Alberti, R. (2000). Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data I. Deposition parameters. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1847–1853. https://doi.org/10.1149/1.1393445

Soman, R., Reisman, A., Temple, D., Alberti, R., & Pace, C. (2000). Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data II. Morphology and composition as a function of deposition parameters. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1854–1858. https://doi.org/10.1149/1.1393446

Soman, R., Reisman, A., & Temple, D. (1999). An alternative derivation for the equilibrium constant of binary solid solution-vapor systems. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3817–3818. https://doi.org/10.1149/1.1392557