@misc{nagy_borges_brown_chaudhari_cook_hanson_johnson_linthicum_piner_rajagopal_et al._2008, title={Gallium nitride material transistors and methods associated with the same}, volume={7,352,016}, number={2008 Apr. 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Nagy, W. H. and Borges, R. M. and Brown, J. D. and Chaudhari, A. D. and Cook, J. W. and Hanson, A. W. and Johnson, J. W. and Linthicum, K. J. and Piner, E. L. and Rajagopal, P. and et al.}, year={2008} }
 @article{belomoin_therrien_smith_rao_twesten_chaieb_nayfeh_wagner_mitas_2002, title={Observation of a magic discrete family of ultrabright Si nanoparticles}, volume={80}, ISSN={["0003-6951"]}, DOI={10.1063/1.1435802}, abstractNote={We demonstrate that electrochemically etched, hydrogen capped SinHx clusters with n larger than 20 are obtained within a family of discrete sizes. These sizes are 1.0 (Si29), 1.67 (Si123), 2.15, 2.9, and 3.7 nm in diameter. We characterize the particles via direct electron imaging, excitation and emission optical spectroscopy, and colloidal crystallization. The band gaps and emission bands are measured. The smallest four are ultrabright blue, green, yellow and red luminescent particles. The availability of discrete sizes and distinct emission in the red, green and blue (RGB) range is useful for biomedical tagging, RGB displays, and flash memories.}, number={5}, journal={APPLIED PHYSICS LETTERS}, author={Belomoin, G and Therrien, J and Smith, A and Rao, S and Twesten, R and Chaieb, S and Nayfeh, MH and Wagner, L and Mitas, L}, year={2002}, month={Feb}, pages={841–843} }
 @article{therrien_lucovsky_davis_2000, title={Charge redistribution at GaN-Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces}, volume={166}, ISSN={["0169-4332"]}, DOI={10.1016/S0169-4332(00)00485-2}, abstractNote={Interfacial defect densities are typically two orders of magnitude higher at [III–V]–dielectric interfaces than at Si–SiO2 interfaces. This paper demonstrates GaN devices with significantly reduced interfacial defect densities using a two-step remote plasma process to form the GaN–dielectric interface and then deposit the dielectric film. Separate plasma oxidation and deposition steps have previously been used for fabrication of aggressively scaled Si devices. Essentially, the same 300°C remote plasma processing has been applied to GaN metal–oxide–semiconductor (MOS) capacitors and field effect transistors (FETs). This paper (i) discusses the low-temperature plasma process for GaN device fabrication, (ii) briefly reviews GaN device performance, and then (iii) presents a chemical bonding model that provides a basis for the improved interface electrical properties.}, number={1-4}, journal={APPLIED SURFACE SCIENCE}, author={Therrien, R and Lucovsky, G and Davis, R}, year={2000}, month={Oct}, pages={513–519} }
 @article{therrien_niimi_gehrke_lucovsky_davis_1999, title={Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces}, volume={48}, ISSN={["0167-9317"]}, DOI={10.1016/s0167-9317(99)00394-9}, abstractNote={Abstract Interfacial defect densities are typically two orders of magnitude higher at [III–V]-dielectric interfaces than at SiSiO 2 interfaces. This paper demonstrates GaN devices with significantly reduced interfacial defect densities using a two step remote plasma process to form the GaN-dielectric interface and then deposit the dielectric film. Separate plasma oxidation and deposition steps have previously been used for fabrication of aggressively scaled Si devices. Essentially the same 300°C remote plasma processing has been applied to GaN metal-oxide semiconductor (MOS) capacitors and field effect transistors (FETs). This paper i) discusses the low temperature plasma process for GaN device fabrication, ii) briefly reviews GaN device performance, and then iii) presents a chemical bonding model that provides a basis for the improved interface electrical properties.}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Therrien, R and Niimi, H and Gehrke, T and Lucovsky, G and Davis, R}, year={1999}, month={Sep}, pages={303–306} }
 @article{therrien_lucovsky_davis_1999, title={Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces}, volume={176}, ISSN={["0031-8965"]}, DOI={10.1002/(sici)1521-396x(199911)176:1<793::aid-pssa793>3.0.co;2-v}, abstractNote={Interfacial defect densities, typically two orders of magnitude lower than those usually obtained at [III–V]-dielectric interfaces, have been demonstrated for GaN capacitors and field effect transistors (FETs). Separate and independently controlled interface formation and film deposition by remote plasma-assisted processing steps performed at 300 °C were employed. The interfacial oxide is Ga2O3, and the deposited gate dielectric is SiO2. Models for the chemical bonding at the GaN–Ga2O3 interface and at the internal dielectric Ga2O3–SiO2 are presented. The most important aspect of the interface formation involves a redistribution of electrons in the surface atom dangling bonds of the GaN polar face that promotes formation of two-electron bonds with the interfacial dielectric.}, number={1}, journal={PHYSICA STATUS SOLIDI A-APPLIED RESEARCH}, author={Therrien, R and Lucovsky, G and Davis, RF}, year={1999}, month={Nov}, pages={793–796} }
 @article{king_carlson_therrien_christman_nemanich_davis_1999, title={X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms}, volume={86}, ISSN={["0021-8979"]}, DOI={10.1063/1.371564}, abstractNote={The mechanisms of growth of GaN on AlN and AlN on GaN via gas source-molecular beam epitaxy with NH3 as the nitrogen source have been investigated using x-ray photoelectron spectroscopy, low energy electron diffraction, and Auger electron spectroscopy. The growth of GaN on AlN at low temperatures (650–750 °C) occurs via a Stranski–Krastanov 2D→3D type mechanism with the transition to 3D growth occurring at ≈10–15 Å. The mechanism changes to Frank van der Merwe (FM)/layer-by-layer growth above 800 °C. The growth of AlN on GaN occurred via a FM layer-by-layer mechanism within the 750–900 °C temperature range investigated. We propose a model based on the interaction of ammonia and atomic hydrogen with the GaN/AlN surfaces which indicates that the surface kinetics of hydrogen desorption and ammonia decomposition are the factors that determine the GaN growth mechanism.}, number={10}, journal={JOURNAL OF APPLIED PHYSICS}, author={King, SW and Carlson, EP and Therrien, RJ and Christman, JA and Nemanich, RJ and Davis, RF}, year={1999}, month={Nov}, pages={5584–5593} }