@misc{nagy_borges_brown_chaudhari_cook_hanson_johnson_linthicum_piner_rajagopal_et al._2008, title={Gallium nitride material transistors and methods associated with the same}, volume={7,352,016}, number={2008 Apr. 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Nagy, W. H. and Borges, R. M. and Brown, J. D. and Chaudhari, A. D. and Cook, J. W. and Hanson, A. W. and Johnson, J. W. and Linthicum, K. J. and Piner, E. L. and Rajagopal, P. and et al.}, year={2008} }
 @article{belomoin_therrien_smith_rao_twesten_chaieb_nayfeh_wagner_mitas_2002, title={Observation of a magic discrete family of ultrabright Si nanoparticles}, volume={80}, DOI={10.1063/1.1435802}, number={5}, journal={Applied Physics Letters}, author={Belomoin, G. and Therrien, J. and Smith, A. and Rao, S. and Twesten, R. and Chaieb, S. and Nayfeh, M. H. and Wagner, L. and Mitas, L.}, year={2002}, pages={841–843} }
 @article{therrien_lucovsky_davis_2000, title={Charge redistribution at GaN-Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma- processed MOS devices prepared on polar GaN faces}, volume={166}, DOI={10.1016/S0169-4332(00)00485-2}, number={1-4}, journal={Applied Surface Science}, author={Therrien, R. and Lucovsky, G. and Davis, R. F.}, year={2000}, pages={513–519} }
 @article{therrien_niimi_gehrke_lucovsky_davis_1999, title={Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces}, volume={48}, DOI={10.1016/s0167-9317(99)00394-9}, number={1-4}, journal={Microelectronic Engineering}, author={Therrien, R. and Niimi, H. and Gehrke, T. and Lucovsky, G. and Davis, R. F.}, year={1999}, pages={303–306} }
 @article{therrien_lucovsky_davis_1999, title={Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces}, volume={176}, DOI={10.1002/(sici)1521-396x(199911)176:1<793::aid-pssa793>3.0.co;2-v}, number={1}, journal={Physica Status Solidi. A, Applications and Materials Science}, author={Therrien, R. and Lucovsky, G. and Davis, R. F.}, year={1999}, pages={793–796} }
 @article{king_carlson_therrien_christman_nemanich_davis_1999, title={X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms}, volume={86}, DOI={10.1063/1.371564}, number={10}, journal={Journal of Applied Physics}, author={King, S. W. and Carlson, E. P. and Therrien, R. J. and Christman, J. A. and Nemanich, R. J. and Davis, R. F.}, year={1999}, pages={5584–5593} }