@article{yang_yan_fang_wang_2003, title={The first fluorescent sensor for D-glucarate based on the cooperative action of boronic acid and guanidinium groups}, ISSN={["1364-548X"]}, DOI={10.1039/b300098b}, abstractNote={A new fluorescent sensor (1) with a recognition unit consisting of a boronic acid moiety and a guanidinium unit shows selective binding of D-glucarate in aqueous solution.}, number={6}, journal={CHEMICAL COMMUNICATIONS}, author={Yang, WQ and Yan, J and Fang, H and Wang, BH}, year={2003}, pages={792–793} }
 @article{fang_ozturk_pa o'neil_seebauer_2001, title={Arsenic redistribution during rapid thermal chemical vapor deposition of TiSi2 on Si}, volume={148}, ISSN={["0013-4651"]}, DOI={10.1149/1.1339236}, abstractNote={This paper studies the redistribution behavior of implanted arsenic during selective rapid thermal chemical vapor deposition of titanium disilicide (TiSi 2 ). The arsenic implant doses ranged from 3 × 10 14 cm -2 to 5 × 10 15 cm -2 . The TiSi 2 films were deposited either directly on arsenic-implanted silicon substrates or on epitaxial silicon buffer layers selectively deposited with varying thicknesses before TiSi 2 depositions. SiH 4 and TiCl 4 were used as precursors for TiSi 2 depositions and Si 2 H 6 and Cl 2 for selective silicon epitaxial growth. Experimental data revealed that the majority of the implanted arsenic was lost from the silicon substrate into the deposited TiSi 2 films when epitaxial silicon buffer layers were not employed. With the inclusion of the buffer layer, the arsenic loss could be reduced significantly. The loss of arsenic observed could not be explained by considering substrate consumption alone. In both cases arsenic exhibited strongly enhanced out-diffusion from the silicon substrate into the TiSi 2 film. The injection of vacancies during the TiSi 2 depositions has been proposed as the reason for this enhanced out-diffusion. Monte Carlo simulations have been performed to verify the proposed model.}, number={2}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Fang, H and Ozturk, MC and PA O'Neil and Seebauer, EG}, year={2001}, month={Feb}, pages={G43–G49} }
 @article{fang_ozturk_seebauer_batchelor_1999, title={Effects of arsenic doping on chemical vapor deposition of titanium silicide}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392621}, abstractNote={This work examines the effects of implanted arsenic on nucleation and growth of TiSi 2 formed by rapid thermal chemical vapor deposition using SiH 4 and TiCl 4 as the precursors. In this study depositions were carried out in a temperature range of 750 to 850°C on Si substrates implanted with As atoms. The As implant doses ranged from 3 × 10 14 to 5 × 10 15 cm -2 . It is shown that heavy dose As can result in a barrier to TiSi 2 nucleation and enhance silicon substrate consumption. A surface passivation model is proposed to explain the effects. On Si, As provides a stable surface structure which inhibits adsorption of SiH 4 and TiCl 4 . Higher temperatures aid As desorption from the Si surface providing nucleation sites. With moderate implant doses, As results in an incubation time whereas very high doses (≥5 × 10 15 cm -2 ) almost completely suppress nucleation. During deposition, As diffuses through the TiSi 2 layer and plays a similar role on the TiSi 2 surface. Because TiCl 4 adsorption on TiSi 2 is favored, the substrate supplies the Si atoms for TiSi 2 formation resulting in enhanced consumption. Because this process relies on Si diffusion through TiSi 2 , beyond a threshold thickness the efficiency of the Si diffusion process drops resulting in suppression of the deposition process. The results indicate that the As dose also plays a role in grain size and surface morphology of the deposited layers. Higher As doses result in smaller grained TiSi 2 films which can be attributed to the role of As in nucleation.}, number={11}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Fang, H and Ozturk, MC and Seebauer, EG and Batchelor, DE}, year={1999}, month={Nov}, pages={4240–4245} }