2002 journal article

Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08)

APPLIED PHYSICS LETTERS, 80(14), 2475–2477.

By: B. Moody n, P. Barletta n, N. El-Masry n, J. Roberts n, M. Aumer n, S. LeBoeuf n, S. Bedair n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

APPLIED PHYSICS LETTERS, 80(17), 3099–3101.

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 personal communication

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13)

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1).

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Self-assembled AlInGaN quaternary superlattice structures

APPLIED PHYSICS LETTERS, 79(11), 1616–1618.

By: N. El-Masry n, M. Behbehani n, S. LeBoeuf n, M. Aumer n, J. Roberts n & S. Bedair n

Source: Web Of Science
Added: August 6, 2018

2001 journal article

Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells

APPLIED PHYSICS LETTERS, 79(23), 3803–3805.

By: M. Aumer n, S. LeBoeuf n, B. Moody n & S. Bedair n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

APPLIED PHYSICS LETTERS, 77(6), 821–823.

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells

APPLIED PHYSICS LETTERS, 77(1), 97–99.

By: S. LeBoeuf n, M. Aumer n & S. Bedair n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

High optical quality AlInGaN by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 75(21), 3315–3317.

By: M. Aumer n, S. LeBoeuf n, F. McIntosh n & S. Bedair n

Source: Web Of Science
Added: August 6, 2018

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