Steven F. Leboeuf

Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08)

APPLIED PHYSICS LETTERS, 80(14), 2475–2477.

Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

APPLIED PHYSICS LETTERS, 80(17), 3099–3101.

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13)

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1).

Self-assembled AlInGaN quaternary superlattice structures

APPLIED PHYSICS LETTERS, 79(11), 1616–1618.

Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells

APPLIED PHYSICS LETTERS, 79(23), 3803–3805.

Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

APPLIED PHYSICS LETTERS, 77(6), 821–823.

Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells

APPLIED PHYSICS LETTERS, 77(1), 97–99.

High optical quality AlInGaN by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 75(21), 3315–3317.