Alexander V. Kvit

Epitaxial growth of zinc oxide thin films on silicon

Materials Science and Engineering: B, 117(3), 348–354.

Transmission electron microscopy studies of the bonded SiC-SiC interface

Yushin, G. N., Kvit, A. V., & Sitar, Z. (2005, August).

"Umbrella"-like precipitates in nitrogen-doped Czochralski silicon wafers

APPLIED PHYSICS LETTERS, 84(11), 1889–1891.

Aging effect and nitrogen distribution in diamond nanoparticles

COMPOSITES PART B-ENGINEERING, 35(2), 163–166.

A novel technique for making self-encapsulated and self-aligned copper films

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 103(1), 45–48.

Effect of microstructure on diffusion of copper in TiN films

JOURNAL OF APPLIED PHYSICS, 93(9), 5210–5214.

Electron emission from diamond nanoparticles on metal tips

APPLIED PHYSICS LETTERS, 82(17), 2904–2906.

Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon

APPLIED PHYSICS LETTERS, 83(7), 1367–1369.

Formation of self-assembled epitaxial nickel nanostructures

JOURNAL OF APPLIED PHYSICS, 94(8), 4841–4846.

Growth, characterization,, and electrical properties of PbZr0.52Ti0.48O3 thin films on buffered silicon substrates using pulsed laser deposition

JOURNAL OF MATERIALS RESEARCH, 18(1), 111–114.

In situ point defect generation and agglomeration during electron-beam irradiation of nitrogen-doped Czochralski silicon

ELECTROCHEMICAL AND SOLID STATE LETTERS, 6(11), G134–G136.

Nano-scale analysis of precipitates in nitrogen-doped Czochralski silicon

Rozgonyi, G. A., Karoui, A., Kvit, A., & Duscher, G. (2003, April). MICROELECTRONIC ENGINEERING, Vol. 66, pp. 305–313.

Copper diffusion characteristics in single-crystal and polycrystalline TaN

APPLIED PHYSICS LETTERS, 81(8), 1453–1455.

Epitaxial growth of TaN thin films on Si(100) and Si(111) using a TiN buffer layer

APPLIED PHYSICS LETTERS, 80(13), 2323–2325.

Growth of epitaxial NdNiO3 and integration with Si(100)

APPLIED PHYSICS LETTERS, 80(8), 1337–1339.

Improved magnetic properties of self-assembled epitaxial nickel nanocrystallites in thin-film ceramic matrix

JOURNAL OF MATERIALS RESEARCH, 17(4), 738–742.

Novel cubic ZnxMg1-xO epitaxial hetero structures on Si (100) substrates

Solid State Communications, 121(1), 9–13.

Role of nitrogen related complexes in the formation of defects in silicon

APPLIED PHYSICS LETTERS, 80(12), 2114–2116.

Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO films

SOLID STATE COMMUNICATIONS, 121(6-7), 371–374.

Structure and properties of nanocrystalline zinc films

JOURNAL OF NANOPARTICLE RESEARCH, 4(3), 265–269.

Study of fusion bonding of diamond to silicon for silicon-on-diamond technology

APPLIED PHYSICS LETTERS, 81(17), 3275–3277.

High coercivity and superparamagnetic behavior of nanocrystalline iron particles in alumina matrix

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 232(3), 161–167.

Magnetic properties of self-assembled nanoscale La2/3Ca1/3MnO3 particles in an alumina matrix

APPLIED PHYSICS LETTERS, 79(9), 1327–1329.

Mechanical properties of nanocrystalline and epitaxial TiN films on (100) silicon

JOURNAL OF MATERIALS RESEARCH, 16(9), 2733–2738.

Structural and magnetoresistance properties of La2/3Ca1/3MnO3 thin films on buffered silicon substrates

APPLIED PHYSICS LETTERS, 78(8), 1098–1100.

Tunable magnetic properties of metal ceramic composite thin films

SOLID STATE COMMUNICATIONS, 119(2), 63–66.

Integration of Pb(Zr0.52Ti0.48)O-3 epilayers with Si by domain epitaxy

APPLIED PHYSICS LETTERS, 76(11), 1458–1460.

Quantum confinement of E-1 and E-2 transitions in Ge quantum dots embedded in an Al2O3 or an AlN matrix

APPLIED PHYSICS LETTERS, 76(1), 43–45.

Growth of single crystal MgO on TiN/Si heterostructure by pulsed laser deposition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 17(6), 3393–3396.

Optical and structural properties of epitaxial MgxZn1-xO alloys

APPLIED PHYSICS LETTERS, 75(21), 3327–3329.

Quantum confinement of above-band-bap transitions in Ge quantum dots embedded in an Al2O3 or AIN matrix

In T. S. J. Piqueras & M. S. Unlu (Eds.), Optical microstructural characterization of semiconductors (Materials Research Society proceedings, vol. 588). Pittsburgh, Pa.: Materials Research Society.