@inbook{eom_park_heo_huntsinger_2006, title={Improving the prediction of annual average daily traffic for nonfreeway facilities by applying a spatial statistical method}, ISBN={0309099773}, number={1968}, booktitle={Transportation Research Record}, author={Eom, J. K. and Park, M. S. and Heo, T. Y. and Huntsinger, L. F.}, year={2006}, pages={20–29} }
 @article{tiwari_jin_narayan_park_2005, title={Electrical transport in ZnO(1-delta)films: Transition from band-gap insulator to Anderson localized insulator (vol 96, pg 3827, 2004)}, volume={97}, number={5}, journal={Journal of Applied Physics}, author={Tiwari, A. and Jin, C. and Narayan, J. and Park, M.}, year={2005} }
 @article{tiwari_jin_narayan_park_2004, title={Electrical transport in ZnO1-delta films: Transition from band-gap insulator to Anderson localized insulator}, volume={96}, ISSN={["0021-8979"]}, DOI={10.1063/1.1783591}, abstractNote={We have thoroughly investigated the effect of oxygen nonstoichiometry on the electrical transport characteristics of ZnO1−δ films. These films were grown on optical grade quartz substrates by using a pulsed laser deposition technique. In order to alter the amount of oxygen nonstoichiometry (δ), oxygen partial pressure during the film growth was systematically varied from 102Torrto10−5Torr. Qualitative estimates about the amount of oxygen nonstoichiometry in these films were made using Raman Spectroscopy data. High resolution electrical resistivity and thermoelectric power measurements were performed in the temperature range 12–300K. A detailed analysis of electrical transport data showed a transition from band-gap insulating state (for the films prepared at high oxygen environments) to Anderson localized insulating state (for the films prepared at lower oxygen environments).}, number={7}, journal={JOURNAL OF APPLIED PHYSICS}, author={Tiwari, A and Jin, C and Narayan, J and Park, M}, year={2004}, month={Oct}, pages={3827–3830} }
 @article{park_cuomo_rodriguez_yang_nemanich_ambacher_2003, title={Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures}, volume={93}, ISSN={["1089-7550"]}, DOI={10.1063/1.1570507}, abstractNote={The electronic properties of inversion domains in a GaN-based lateral polarity heterostructure were investigated using micro-Raman spectroscopy. The piezoelectric polarization of each domain was calculated from strain determined via Raman scattering. The free carrier concentration and electron mobility were deduced from the longitudinal optical phonon–plasmon coupled mode. The electron concentration in the N-face domain was slightly higher than that in the Ga-face domain. It appears that during growth, a larger number of donor impurities may have been incorporated into the N-face domain than into the Ga-face domain.}, number={12}, journal={JOURNAL OF APPLIED PHYSICS}, author={Park, M and Cuomo, JJ and Rodriguez, BJ and Yang, WC and Nemanich, RJ and Ambacher, O}, year={2003}, month={Jun}, pages={9542–9547} }
 @article{yang_rodriguez_park_nemanich_ambacher_cimalla_2003, title={Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures}, volume={94}, DOI={10.1063/1.1618355}, abstractNote={An intentionally grown GaN film with laterally patterned Ga- and N-face polarities is studied using in situ UV-photoelectron emission microscopy (PEEM). Before chemical vapor cleaning of the surface, the emission contrast between the Ga- and N-face polarities regions was not significant. However, after cleaning the emission contrast between the different polarity regions was enhanced such that the N-face regions exhibited increased emission over the Ga-face regions. The results indicate that the emission threshold of the N-face region is lower than that of the Ga face. Moreover, bright emission was detected from regions around the inversion domain boundaries of the lateral polarity heterostructure. The PEEM polarity contrast and intense emission from the inversion domain boundary regions are discussed in terms of the built-in lateral field and the surface band bending induced by the polarization bound surface charges.}, number={9}, journal={Journal of Applied Physics}, author={Yang, W. C. and Rodriguez, B. J. and Park, M. and Nemanich, R. J. and Ambacher, O. and Cimalla, V.}, year={2003}, pages={5720–5725} }
 @article{park_sakhrani_maria_cuomo_teng_muth_ware_rodriguez_nemanich_2003, title={Wavelength-dependent Raman scattering of hydrogenated amorphous silicon carbon with red, green, and blue light excitation}, volume={18}, ISSN={["2044-5326"]}, DOI={10.1557/JMR.2003.0106}, abstractNote={This study presents results of wavelength-dependent Raman scattering from amorphous silicon carbon (a-Si:C:H). The a-Si:C:H films were produced by radio-frequency plasma-enhanced chemical vapor deposition. Prior results with amorphous carbon indicate that laser excitation selectively probes clusters with differing sizes. Our measurements with a-Si:C:H indicate that when using red (632.8 nm), green (514.5 nm), and blue (488.0 nm) excitation, the Raman D and G peaks shift to higher wave numbers as the excitation energy increases. The higher frequency is associated with smaller clusters that are preferentially excited with higher photon energy. It appears that photoluminescence occurs due to radiative recombination from intracluster transitions in Si-alloyed sp2-bonded carbon clusters}, number={4}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Park, M and Sakhrani, V and Maria, JP and Cuomo, JJ and Teng, CW and Muth, JF and Ware, ME and Rodriguez, BJ and Nemanich, RJ}, year={2003}, month={Apr}, pages={768–771} }
 @article{tiwari_park_jin_wang_kumar_narayan_2002, title={Epitaxial growth of ZnO films on si(111)}, volume={17}, ISSN={["2044-5326"]}, DOI={10.1557/JMR.2002.0361}, abstractNote={In this paper, we report the growth of ZnO films on silicon substrates using a pulsed laser deposition technique. These films were deposited on Si(111) directly as well as by using thin buffer layers of AlN and GaN. All the films were found to have c-axis-preferred orientation aligned with normal to the substrate. Films with AlN and GaN buffer layers were epitaxial with preferred in-plane orientation, while those directly grown on Si(111) were found to have random in-plane orientation. A decrease in the frequency of the  Raman mode and a red shift of the band-edge photoluminescence peak due to the presence of tensile strain in the film, was observed. Various possible sources for the observed biaxial strain are discussed.}, number={10}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Tiwari, A and Park, M and Jin, C and Wang, H and Kumar, D and Narayan, J}, year={2002}, month={Oct}, pages={2480–2483} }
 @article{park_maria_cuomo_chang_muth_kolbas_nemanich_carlson_bumgarner_2002, title={X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy}, volume={81}, ISSN={["0003-6951"]}, DOI={10.1063/1.1506781}, abstractNote={Thick films of GaN were studied by x-ray diffraction and Raman spectroscopy. The GaN thick films were deposited on (0001) sapphire using ultrahigh-rate magnetron sputter epitaxy with typical growth rates as high as 10–60 μm/min. The width of the x-ray rocking curve from the (0002) reflection for the sample produced by this technique is ∼300 arcsec, which is unprecedented for GaN produced by a sputtering-type process. Our recent sample shows an x-ray rocking curve width of 240 arcsec. Only allowed modes were observed in the polarized Raman spectra. The background free carrier concentration is lower than 3×1016 cm−3. The phonon lifetime of the Raman E2(2) mode of the sputtered GaN was comparable to that of bulk single crystal GaN grown by sublimation. The quality of the film was uniform across the wafer. The film was thermally stable upon annealing in N2 ambient. The x-ray and Raman analyses revealed that the sputtered GaN films are of high crystalline quality.}, number={10}, journal={APPLIED PHYSICS LETTERS}, author={Park, M and Maria, JP and Cuomo, JJ and Chang, YC and Muth, JF and Kolbas, RM and Nemanich, RJ and Carlson, E and Bumgarner, J}, year={2002}, month={Sep}, pages={1797–1799} }
 @article{park_teng_sakhrani_mclaurin_kolbas_sanwald_nemanich_hren_cuomo_2001, title={Optical characterization of wide band gap amorphous semiconductors (a-Si : C : H): Effect of hydrogen dilution}, volume={89}, ISSN={["1089-7550"]}, DOI={10.1063/1.1332421}, abstractNote={The effect of hydrogen dilution on the optical properties of a wide band gap amorphous semiconductor (a-Si:C:H) was investigated. The samples were prepared by glow discharge decomposition of tetramethylsilane and were characterized primarily by optical techniques: spectroscopic ellipsometry, Raman scattering, infrared absorption, spectrophotometry, and UV photoluminescence. The deposition rate decreased with hydrogen dilution, while the silicon to carbon ratio remained constant with the addition of hydrogen. The optical band gap of this material increased as the hydrogen flow rate increased. Infrared absorption studies show that the concentration of hydrogen which is bonded to carbon decreases systematically upon hydrogen dilution. Hydrogen dilution appears to reduce the size and concentration of sp2 bonded carbon clusters, possibly caused by the etching of sp2 clusters by atomic hydrogen. The result was also supported by the shift of the Raman G peak position to a lower wave number region. Room temperature photoluminescence in the visible spectrum was observed with UV excitation.}, number={2}, journal={JOURNAL OF APPLIED PHYSICS}, author={Park, M and Teng, CW and Sakhrani, V and McLaurin, MB and Kolbas, RM and Sanwald, RC and Nemanich, RJ and Hren, JJ and Cuomo, JJ}, year={2001}, month={Jan}, pages={1130–1137} }
 @article{hyun_pope_smith_park_cuomo_2000, title={Ultrathin DLC and SiOx layer deposition on poly(ethylene terephthalate) and restriction of surface dynamics}, volume={75}, DOI={10.1002/(SICI)1097-4628(20000228)75:9<1158::AID-APP9>3.3.CO;2-C}, abstractNote={The hydrophilicity of oxygen plasma-reated polymer surfaces decays with storing time in air environments. Because they are dense, highly crosslinked, and chemically stable, diamond-like carbon (DLC) films and silicon oxide films (SiOx) were deposited on poly(ethylene terephthalate) by plasma-enhanced chemical vapor deposition to restrict polymer surface dynamics. In this study, the effects of ultrathin films on surface dynamics of these polymers were investigated. The layers were deposited on substrates with thickness below 100 Å. The thickness of films was measured with a scanning analyzer ellipsometer, while ATR-IR spectroscopy and Raman spectroscopy were performed to observe the chemical structure of the films. Films below 50 Å were also shown to be effective in stabilizing the plasma treated polymer surfaces. © 2000 John Wiley & Sons, Inc. J Appl Polym Sci 75: 1158–1164, 2000}, number={9}, journal={Journal of Applied Polymer Science}, author={Hyun, J. and Pope, M. and Smith, J. and Park, M. and Cuomo, J. J.}, year={2000}, pages={1158–1164} }
 @article{kim_kim_lee_park_kingon_nemanich_im_streiffer_1999, title={An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique}, volume={14}, ISSN={["0884-2914"]}, DOI={10.1557/JMR.1999.0594}, abstractNote={Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.}, number={11}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Kim, SH and Kim, DJ and Lee, KM and Park, M and Kingon, AI and Nemanich, RJ and Im, J and Streiffer, SK}, year={1999}, month={Nov}, pages={4395–4401} }
 @article{park_camphausen_myers_barletta_sakhrani_bergman_nemanich_cuomo_1999, title={Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles}, volume={41}, ISSN={["1873-4979"]}, DOI={10.1016/S0167-577X(99)00135-4}, abstractNote={Amorphous carbon (txa-C1−x) films were prepared by filtered cathodic arc deposition (FCAD). The films were deposited on p-type Si (111). The angle of beam incidence was varied from 0° to 75° with respect to the substrate normal. Micro-Raman spectroscopy, electron energy loss spectroscopy (EELS), and transmission electron microscopy (TEM) were carried out for sample analysis. It was found that the position of the G peak shifts to a higher wave number region as the angle of incidence increases. This means that the sp2/sp3 ratio increases with increasing angle. This conclusion is supported by EELS. The film deposited at an angle of 75° exhibits a columnar structure with alternating high and low carbon density regions.}, number={5}, journal={MATERIALS LETTERS}, author={Park, M and Camphausen, SM and Myers, AF and Barletta, PT and Sakhrani, V and Bergman, L and Nemanich, RJ and Cuomo, JJ}, year={1999}, month={Dec}, pages={229–233} }