@article{loesing_guryanov_phillips_griffis_2002, title={Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs+, O-2(+), and CsC6- primary ion beams}, volume={20}, ISSN={["2166-2746"]}, DOI={10.1116/1.1450588}, abstractNote={It is well known that reducing the work function of the sample surface using Cs+ ions increases the negative ion yield of phosphorus. It is also well known that a shallow primary beam implantation depth (RP) is required for achieving high depth resolution during the analysis of ultrashallow implant profiles. The combination of the opposite polarities of the positive Cs+ primary ion beam and the negatively biased sample (the combination most often used for P analysis using magnetic sector secondary ion mass spectroscopy) unfortunately accelerates the Cs+ ions towards the sample thus limiting the degree to which the primary ion impact energy can be reduced [R. Loesing, G. M. Guryanov, J. L. Hunter, and D. P. Griffis, J. Vac. Sci. Technol. B 18, 509 (2000)]. A low primary ion beam impact energy and high impact angle, both of which result in lower RP, can be obtained using a negatively charged cluster ion such as CsC6− (Peabody negative ion source) impacting on a negatively biased sample [G. Gillen, L. King, B. Freibaum, R. Lareau, and J. Bennett, in Secondary Ion Mass Spectrometry, SIMS XII, edited by A. Benninghoven et al. (Elsevier, Amsterdam, 2000), p. 279; R. Loesing, G. M. Guryanov, and D. P. Griffis, in Proceedings of the 13th Annual SIMS Workshop, Lake Tahoe, 2000, p. 36]. If, however, Cs is not required to improve secondary ion yield, a low energy O2+ primary beam impacting on a positively biased sample can be used [I. M. Abdelrehim, T. H. Büyüklimanli, S. P. Smith, and C. W. Magee, in Secondary Ion Mass Spectrometry SIMS XII, edited by A. Benninghoven (Elsevier, Amsterdam, 2000), p. 279; S. P. Smith, C. J. Hitzman, and C. W. Magee, in Secondary Ion Mass Spectrometry, SIMS XI, edited by G. Gillen (Wiley, Chichester, 1998), p. 277]. In this case, the reduction in sensitivity for P due to the loss of the negative ion yield enhancing Cs can be partly compensated by flooding the sample surface with oxygen. In this study Cs+, CsC6−, and O2+ primary ions are compared for depth profiling of ultrashallow phosphorus in Si in terms of decay length, sensitivity, and crater bottom roughness.}, number={2}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Loesing, R and Guryanov, GM and Phillips, MS and Griffis, DP}, year={2002}, pages={507–511} }
 @inbook{hunter_bates_patel_loesing_guraynov_griffis_2000, title={Optimization of SIMS analysis conditions for ultra-shallow phosphorus and arsenic implants}, volume={165}, ISBN={0750306858}, number={2000}, booktitle={Microbeam Analysis 2000: proceedings of the Second Conference of the International Union of Microbeam Analysis Societies held in Kailua-Kona, Hawaii, 9-14 July 2000}, publisher={Bristol: Institute of Physics Publishing}, author={Hunter, J. L. and Bates, T. B. and Patel, S. B. and Loesing, R. and Guraynov, G. and Griffis, D. P.}, editor={Williams, D. B. and Shimizu, R.Editors}, year={2000}, pages={327–328} }
 @article{loesing_guryanov_hunter_griffis_2000, title={Secondary ion mass spectrometry depth profiling of ultrashallow phosphorous in silicon}, volume={18}, ISSN={["1071-1023"]}, DOI={10.1116/1.591222}, abstractNote={High-precision quantitative secondary ion mass spectrometry (SIMS) trace analyses of ultrashallow P31 distributions in Si (i.e., junction depths of 50 nm or less) require the ability to eliminate the Si130H mass interference while simultaneously minimizing primary ion impact energy and maximizing sensitivity. Elimination of Si130H requires a relatively high mass resolution SIMS instrument such as the Cameca IMS-6f used in this work. A range of Cs+ primary ion energies ranging from 9.5 to 1.6 keV was investigated to determine which provided the best depth resolution as measured by decay length for ultrashallow depth profiles of 2 keV P in Si. Improvements (or lack thereof) in decay length as the primary ion impact energy was reduced were correlated with crater bottom roughness measurements. Changes in the ion yields of P and Si resulting from both the appreciable fraction of the analyzed depth made up of the surface native oxide and also from the depth required for the primary ion yield enhancing Cs+ to reach a constant level were also investigated utilizing bulk-doped P in Si. The resulting ion yield transients obtained were then used to generate an empirical correction function with the aim of improving the quantitative accuracy of the ultrashallow depth profile selected as having the minimum decay length obtained in this work. Finally, improvements in the P detection limit provided by optimization of the secondary ion postacceleration system are discussed.}, number={1}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Loesing, R and Guryanov, GM and Hunter, JL and Griffis, DP}, year={2000}, pages={509–513} }