@article{kiselev_iafrate_2008, title={Phonon dynamics and phonon assisted losses in Euler-Bernoulli nanobeams}, volume={77}, ISSN={["2469-9969"]}, DOI={10.1103/physrevb.77.205436}, abstractNote={Nonequilibrium phonon processes and related degradation effects are treated for a Euler-Bernoulli flexural beam undergoing scaling from a micro to nanospatial regime. For the scaling lengths under consideration, the lowest resonator mode is in the frequency range of 1\char21{}10 GHz. In this range, it is found that the beam thermal environment routinely exceeds the limits of validity for the local temperature approximation; this is due to sharp inhomogeneities in strain pattern across the thin beam cross sections induced by flexural motion as opposed to the often assumed temporal dynamics of high frequency operation. In a Euler-Bernoulli-Boltzmann framework, an analysis of the internal phonon flow in the flexural beam is conducted, and dissipative losses are evaluated. The complexity of the microscopic phonon dynamics is delineated and strategically graphed in terms of the parameters characterizing the flexural beam and the phonon system therein. In limiting cases, two major intrinsic dissipative mechanisms are operative, one due to the diffusive spatial redistribution of phonons resulting in heat transfer and thermoelastic loss, and the other due to thermalization of the local phonon population distorted by strain resulting in the manifestation of the Akhiezer effect. In the frequency domain of interest, these two loss mechanisms lose their distinctive character with decreased spatial scaling and transition to a unified dissipative process governed by the ballistic phonon transfer across the beam.}, number={20}, journal={PHYSICAL REVIEW B}, author={Kiselev, A. A. and Iafrate, G. J.}, year={2008}, month={May} }
 @article{kiselev_ivchenko_2007, title={Comment on "Spin and cyclotron energies of electrons in GaAs/Ga1-xAlxAs quantum wells"}, volume={76}, number={19}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Kiselev, A. A. and Ivchenko, E. L.}, year={2007} }
 @article{yugova_greilich_yakovlev_kiselev_bayer_petrov_dolgikh_reuter_wieck_2007, title={Universal behavior of the electron g factor in GaAs/AlxGa1-xAs quantum wells}, volume={75}, number={24}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Yugova, I. A. and Greilich, A. and Yakovlev, D. R. and Kiselev, A. A. and Bayer, M. and Petrov, V. V. and Dolgikh, Y. K. and Reuter, D. and Wieck, A. D.}, year={2007} }
 @article{croke_schwartz_shi_narayanan_kiselev_gyure_2005, title={Direct electrical measurement of the electron g factor in ultra-thin InGaAs/InP single quantum wells}, volume={36}, ISSN={["0026-2692"]}, DOI={10.1016/j.mejo.2005.02.027}, abstractNote={The Landé g factor has been measured for electrons in ultra-thin InGaAs/InP quantum wells by means of an electrically-detected electron spin resonance (EDESR) technique. These experiments, carried out in a range of applied magnetic fields, allowed direct, unambiguous determination of both the absolute value and sign of the normal component of the electron g factor, g∥ (g parallel to the structure growth axis and the magnetic field). We observed a linear magnetic field dependence to the g factor, in agreement with the expression g∥(B,N)=g∥0+c(N+1/2)B, where N is the Landau level index.}, number={3-6}, journal={MICROELECTRONICS JOURNAL}, author={Croke, ET and Schwartz, RN and Shi, B and Narayanan, AA and Kiselev, AA and Gyure, MF}, year={2005}, pages={379–382} }
 @article{kiselev_kim_2005, title={Prohibition of equilibrium spin currents in multiterminal ballistic devices}, volume={71}, ISSN={1098-0121 1550-235X}, url={http://dx.doi.org/10.1103/PhysRevB.71.153315}, DOI={10.1103/physrevb.71.153315}, abstractNote={We show that in the multi-terminal ballistic devices with intrinsic spin-orbit interaction connected to normal metal contacts there are no equilibrium spin currents present at any given electron energy. Obviously, this statement holds also after the integration over all occupied states. Based on the proof of this fact, a number of scenarios involving nonequilibrium spin currents is identified and further analyzed. In particular, it is shown that an arbitrary two-terminal device cannot polarize transient current. The same is true for the output terminal of an N-terminal device when all N-1 inputs are connected in parallel.}, number={15}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Kiselev, A. A. and Kim, K. W.}, year={2005}, month={Apr} }
 @article{krieger_kiselev_iafrate_2005, title={Quantum transport for a Bloch electron quasiparticle in an inhomogeneous electric field scattering from a random distribution of impurities: A Wigner approach}, volume={72}, ISSN={["2469-9969"]}, DOI={10.1103/physrevb.72.195201}, abstractNote={The quantum transport equation is derived in terms of the Wigner distribution function for a Bloch electron quasiparticle, that is, a Bloch electron in a single band, interacting with a random, inhomogeneous distribution of impurities, and subject to general homogeneous and inhomogeneous electric fields. The time dependent homogeneous electric field is described through the vector potential gauge. The derivation of the transport equation makes use of a unitary transformation of the Liouville equation based on the interaction picture to a form in which the scattering interaction appears quadratically, and utilizes accelerated Bloch states as basis states; the resulting generalized drift and diffusion terms are obtained exactly for an arbitrary band structure. In taking the limit of slowly varying inhomogeneous electric field and slowly varying scatterer density distribution, a quantum generalization of the Boltzmann-like Wigner transport equation is obtained which includes impurity-related intracollisional field effects in the collision term and a drift term comprising the total force due to both the homogeneous and inhomogeneous fields.}, number={19}, journal={PHYSICAL REVIEW B}, author={Krieger, JB and Kiselev, AA and Iafrate, GJ}, year={2005}, month={Nov} }
 @article{barry_kiselev_kim_2003, title={Electron spin relaxation under drift in GaAs}, volume={82}, ISSN={0003-6951 1077-3118}, url={http://dx.doi.org/10.1063/1.1578180}, DOI={10.1063/1.1578180}, abstractNote={Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of moderate drift fields and/or nonzero injection energies. For relatively low fields (a couple of kV/cm), a substantial amount of spin polarization is preserved for several microns at 300 K. However, it is also found that the spin relaxation rate increases rapidly with the drift field, scaling as the square of the electron wave vector in the direction of the field. When the electrons are injected with a high energy, a pronounced decrease is observed in the spin relaxation length due to an initial increase in the spin precession frequency. Hence, high-field or high-energy transport conditions may not be desirable for spin-based devices.}, number={21}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Barry, E. A. and Kiselev, A. A. and Kim, K. W.}, year={2003}, month={May}, pages={3686–3688} }
 @article{baron_kiselev_robinson_kim_wang_yablonovitch_2003, title={Manipulating theL-valley electrongfactor in Si-Ge heterostructures}, volume={68}, ISSN={0163-1829 1095-3795}, url={http://dx.doi.org/10.1103/PhysRevB.68.195306}, DOI={10.1103/physrevb.68.195306}, abstractNote={The Zeeman effect for the L valley conduction band electrons in SiGe heterostructures is considered. A detailed calculation of the electron g tensor is performed in the framework of a relevant kip model, developed specifically for the L point of the Brillouin zone. Electrons at the L point are considered under the influence of the different crystallographic orientations, alloy composition, quantum confinement, strain, and electric field, whose interplay causes a considerable deviation of the g tensor components from their bulk values. Our result strongly suggests that the SiGe-based quantum wells are a promising choice for the g tensor engineering for spin manipulation.}, number={19}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Baron, F. A. and Kiselev, A. A. and Robinson, H. D. and Kim, K. W. and Wang, K. L. and Yablonovitch, E.}, year={2003}, month={Nov} }
 @article{kiselev_kim_2003, title={T-shaped spin filter with a ring resonator}, volume={94}, ISSN={0021-8979 1089-7550}, url={http://dx.doi.org/10.1063/1.1601313}, DOI={10.1063/1.1601313}, abstractNote={A planar ballistic T-shaped structure with a ring resonator attached is shown to be highly effective in filtering electron spin from an unpolarized source into two output fluxes with opposite and practically pure spin polarizations. The operability of the proposed device relies on the peculiar spin-dependent transmission properties of the T-shaped connector in the presence of Rashba spin–orbit interaction as well as the difference in dynamic phase gain of the two alternative paths around the ring resonator through upper and lower branches for even and odd eigenmodes.}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kiselev, A. A. and Kim, K. W.}, year={2003}, month={Sep}, pages={4001–4005} }
 @article{kiselev_kim_yablonovitch_2002, title={Designing a heterostructure for the quantum receiver}, volume={80}, ISSN={0003-6951 1077-3118}, url={http://dx.doi.org/10.1063/1.1472480}, DOI={10.1063/1.1472480}, abstractNote={In this letter, we develop optimal parameters for a structure which is suitable for the realization of a coherent quantum receiver. Conditions including predefined photon wavelength, strain, small Zeeman splitting of the electron levels, and large Zeeman effect for quantum-confined light holes are satisfied simultaneously for the structure based on the InGaAsP solid solutions. We are able to achieve designs with wavelengths of 1.3 and 1.55 μm that are desirable for optoelectronic applications.}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kiselev, A. A. and Kim, K. W. and Yablonovitch, E.}, year={2002}, month={Apr}, pages={2857–2859} }
 @article{kiselev_kim_yablonovitch_2002, title={Designing heterostructures with predefined value of light-hole g factor for coherent solid-state quantum receiver}, volume={13}, ISSN={1386-9477}, url={http://dx.doi.org/10.1016/S1386-9477(02)00204-7}, DOI={10.1016/S1386-9477(02)00204-7}, abstractNote={In this paper, we give a consistent theoretical analysis of the in-plane Zeeman effect for quantum-confined light holes and evaluate possibilities to design structures with desired property of large g factor for these valence states. Numerical example is given for the technologically important InGaAs/InP both lattice-matched and strained heterosystems suitable for 1.3 and 1.55μm optoelectronic applications.}, number={2-4}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Kiselev, A.A and Kim, K.W and Yablonovitch, E}, year={2002}, month={Mar}, pages={630–633} }
 @article{kosaka_kiselev_baron_kim_yablonovitch_2001, title={Electron g factor engineering in III-V semiconductors for quantum communications}, volume={37}, ISSN={0013-5194}, url={http://dx.doi.org/10.1049/el:20010314}, DOI={10.1049/el:20010314}, abstractNote={An entanglement-preserving photodetector converts photon polarisation to electron spin. Up and down spin must respond equally to oppositely polarised photons, creating a requirement for degenerate spin energies. g/sub e//spl sime/0, for electrons. The authors present a plot of g/sub e/ factor against lattice constant, analogous to bandgap against lattice constant, that can be used for g factor engineering of III-V alloys and quantum wells.}, number={7}, journal={Electronics Letters}, publisher={Institution of Engineering and Technology (IET)}, author={Kosaka, H. and Kiselev, A.A. and Baron, F.A. and Kim, Ki Wook and Yablonovitch, E.}, year={2001}, pages={464} }
 @article{tarasenko_kiselev_ivchenko_dinger_baldauf_klingshirn_kalt_baranovskii_eichmann_thomas_2001, title={Energy relaxation of localized excitons at finite temperature}, volume={16}, ISSN={["0268-1242"]}, DOI={10.1088/0268-1242/16/6/313}, abstractNote={Macro- and micro-photoluminescence (PL) spectroscopy has been applied to investigate the exciton localization in cubic CdS/ZnSe type-II superlattices (SL) in the temperature range 5-35 K. The non-monotonic shift of the macro-PL peak with increasing temperature reveals the kinetic contribution of acoustic-phonon-assisted exciton multi-hopping processes. The experimental data are described by means of computer simulation and calculations based on a kinetic theory generalized from zero to finite temperatures. The advantages of each theoretical approach are discussed.}, number={6}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, author={Tarasenko, SA and Kiselev, AA and Ivchenko, EL and Dinger, A and Baldauf, M and Klingshirn, C and Kalt, H and Baranovskii, SD and Eichmann, R and Thomas, P}, year={2001}, month={Jun}, pages={486–492} }
 @article{kiselev_kim_yablonovitch_2001, title={In-plane light-holegfactor in strained cubic heterostructures}, volume={64}, ISSN={0163-1829 1095-3795}, url={http://dx.doi.org/10.1103/PhysRevB.64.125303}, DOI={10.1103/physrevb.64.125303}, abstractNote={In the context of a proposed design of a solid-state receiver for quantum communications, we consider the Zeeman splitting of the light-hole states in strained cubic heterostructures with an in-plane external magnetic field. The choice of interband optical transitions that allows coherent transfer of photon polarization to electron spin suggests that the magnitude of corresponding g factor component will be a critically important quantity for the success of such devices. Our approach allows a straightforward calculation of this parameter and incorporates the quantum confinement, heterolayers composition, and strain effects on the g factor.}, number={12}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Kiselev, A. A. and Kim, K. W. and Yablonovitch, E.}, year={2001}, month={Sep} }
 @article{kiselev_kim_2001, title={T-shaped ballistic spin filter}, volume={78}, ISSN={0003-6951 1077-3118}, url={http://dx.doi.org/10.1063/1.1347023}, DOI={10.1063/1.1347023}, abstractNote={We propose a semiconductor structure that can filter electron spin without using external magnetic fields. The structure consists of a T-shaped quasi-one-dimensional channel and an electrode placed near the channel intersection to control the spin-orbit interaction for electrons. Our calculations demonstrate that the proposed device can redirect electrons with opposite spins from an unpolarized source to left and right output leads, respectively, and, thus, serve as a spin filter. When the incident electron energy is in resonance with the quasilocalized zero-dimensional states at the intersection, polarization of the transmitted fluxes approaches 100%.}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kiselev, A. A. and Kim, K. W.}, year={2001}, month={Feb}, pages={775–777} }
 @article{shukla_shayegan_parihar_lyon_cooper_kiselev_2000, title={Large skyrmions in an Al0.13Ga0.87As quantum well}, volume={61}, number={7}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Shukla, S. P. and Shayegan, M. and Parihar, S. R. and Lyon, S. A. and Cooper, N. R. and Kiselev, A. A.}, year={2000}, pages={4469–4472} }
 @article{kiselev_kim_2000, title={Progressive suppression of spin relaxation in two-dimensional channels of finite width}, volume={61}, ISSN={0163-1829 1095-3795}, url={http://dx.doi.org/10.1103/PhysRevB.61.13115}, DOI={10.1103/physrevb.61.13115}, abstractNote={We have investigated spatiotemporal kinetics of electron spin polarization in a semiconductor narrow two-dimensional (2D) strip and explored the ability to manipulate spin relaxation. Information about the conduction electron spin and mechanisms of spin rotation is incorporated into a Monte Carlo transport simulation program. A model problem, involving linear-in-$k$ splitting of the conduction band responsible for the D'yakonov-Perel' mechanism of spin relaxation in the zinc-blende semiconductors and heterostructures, is solved numerically to yield the decay of spin polarization of an electron ensemble in the 2D channel of finite width. For very wide channels, a conventional 2D value of spin relaxation is obtained. With decreasing channel width, the relaxation time increases rapidly by orders of magnitude. Surprisingly, the crossover point between 2D and quasi-1D behavior is found to be at tens of electron mean-free paths. Thus, classically wide channels can effectively suppress electron spin relaxation.}, number={19}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Kiselev, A. A. and Kim, K. W.}, year={2000}, month={May}, pages={13115–13120} }
 @article{kiselev_kim_2000, title={Suppression of Dyakonov-Perel spin relaxation in 2D channels of finite width}, volume={221}, ISSN={["0370-1972"]}, DOI={10.1002/1521-3951(200009)221:1<491::aid-pssb491>3.0.co;2-i}, abstractNote={We have investigated spin-dependent transport in semiconductor narrow 2D channels and explored the possibility of suppressing spin relaxation. Our approach is based on a Monte Carlo transport model and incorporates information on conduction band electron spins and spin rotation mechanisms. Specifically, an ensemble of electrons experiencing multiple scattering events is simulated numerically to study the decay of electron spin polarization in channels of finite width due to the Dyakonov-Perel (DP) mechanism. We have identified different regimes of the spin relaxation in the 2D channels of finite width and established the dependencies of spin relaxation time on the width L and DP parameter ηDP. The most attractive regime for future spintronic applications is the regime of the suppressed spin relaxation with the relaxation time τS scaling as L—2.}, number={1}, journal={PHYSICA STATUS SOLIDI B-BASIC RESEARCH}, author={Kiselev, AA and Kim, KW}, year={2000}, month={Sep}, pages={491–494} }
 @article{kiselev_kim_stroscio_2000, title={Thermal conductivity of Si/Ge superlattices: A realistic model with a diatomic unit cell}, volume={62}, ISSN={0163-1829 1095-3795}, url={http://dx.doi.org/10.1103/PhysRevB.62.6896}, DOI={10.1103/physrevb.62.6896}, abstractNote={This paper considers the effects of a realistic description of phonons in diamondlike semiconductors and their conversion on the abrupt heterointerfaces on the thermal conductivity of the superlattice (SL). Due to the much larger mass of Ge atoms in comparison to Si, the most probable acoustic phonons in Si layers at room temperature have no counterpart in Ge. In simplified models where Si and Ge are simulated by monatomic crystals with fitted parameters, this leads to the highly efficient trapping of high-energy acoustic phonons in Si layers and drastic reduction of the SL thermal conductivity. The proposed approach incorporates the optical branches and the effective conversion of the phonons at interfaces extends the temperature range for which the model is valid and thereby leads to corrections to predicted thermal conductivity.}, number={11}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Kiselev, A. A. and Kim, K. W. and Stroscio, M. A.}, year={2000}, month={Sep}, pages={6896–6899} }
 @article{kiselev_kim_stroscio_1999, title={Calculational approach for the structure of electron and hole levels in quantum dots of varying shape}, volume={60}, ISSN={0163-1829 1095-3795}, url={http://dx.doi.org/10.1103/PhysRevB.60.7748}, DOI={10.1103/physrevb.60.7748}, abstractNote={Another approach to the calculation of electron and hole states in quantum dots is proposed. It benefits from the particular choice of products of powers of Cartesian coordinates as a basis, since it is possible to evaluate all required matrix elements analytically for these systems. A variety of dot shapes in the presence of external electric fields can be analyzed conveniently. This approach provides a way to calculate quantum dot ensemble averages quickly and effectively.}, number={11}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Kiselev, A. A. and Kim, K. W. and Stroscio, M. A.}, year={1999}, month={Sep}, pages={7748–7751} }
 @article{kiselev_kim_stroscio_1999, title={Computing carrier interactions with confined and excluded phonons in nanostructures of complex geometries}, volume={59}, ISSN={0163-1829 1095-3795}, url={http://dx.doi.org/10.1103/PhysRevB.59.10212}, DOI={10.1103/physrevb.59.10212}, abstractNote={We provide a simple and highly effective procedure for calculating quantities such as electron scattering rates involving confined and excluded phonons for quantum wires of arbitrary geometry. This problem is particularly difficult to solve by the usual summation procedure as well as by alternative treatments proposed thus far. To demonstrate the strength of our approach, we produce exact analytical results in the case of a quantum well. As a numerical example, we consider a classic T-shaped structure with different sizes and radii of curvature at the intersections. We examine the possibility of manipulating structural characteristics such as electron-phonon scattering rates by making minor modifications to the quantum wire cross-sectional geometries.}, number={15}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Kiselev, A. A. and Kim, K. W. and Stroscio, M. A.}, year={1999}, month={Apr}, pages={10212–10216} }
 @article{kiselev_kim_ivchenko_1999, title={Zeeman effect in wurtzite-based and strained cubic heterostructures}, volume={215}, ISSN={["0370-1972"]}, DOI={10.1002/(sici)1521-3951(199909)215:1<235::aid-pssb235>3.0.co;2-s}, abstractNote={We investigate theoretically the Zeeman effect on the lowest confined subbands in wurtzite heterostructures. The powerful approach suggested recently for zincblende-based nanostructures is extended to a new symmetry class and analytical expressions are derived for the first time for the g-factors in the technologically important nitride-based quantum wells and AIIBVI heterostructures, in the framework of the quasi-cubical Kane model. In our calculation we make allowance for the strain in heterolayers and huge internal electric fields due to spontaneous polarization and lattice-constant mismatch between the compositional materials.}, number={1}, journal={PHYSICA STATUS SOLIDI B-BASIC RESEARCH}, author={Kiselev, AA and Kim, KW and Ivchenko, EL}, year={1999}, month={Sep}, pages={235–239} }