Amit Khandelwal

Khandelwal, A., Niimi, H., Lucovsky, G., & Lamb, H. H. (2002). Low-temperature Ar/N-2 remote plasma nitridation of SiO2 thin films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 20(6), 1989–1996. https://doi.org/10.1116/1.1513635

Niimi, H., Khandelwal, A., Lamb, H. H., & Lucovsky, G. (2002). Reaction pathways in remote plasma nitridation of ultrathin SiO2 films. JOURNAL OF APPLIED PHYSICS, 91(1), 48–55. https://doi.org/10.1063/1.1419208

Khandelwal, A., Smith, B. C., & Lamb, H. H. (2001). Nitrogen incorporation in ultrathin gate dielectrics: A comparison of He/N2O and He/N-2 remote plasma processes. JOURNAL OF APPLIED PHYSICS, 90(6), 3100–3108. https://doi.org/10.1063/1.1397286

Smith, B. C., Khandelwal, A., & Lamb, H. H. (2000). Ar/N2O remote plasma-assisted oxidation of Si(100): Plasma chemistry, growth kinetics, and interfacial reactions. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 1757–1763. https://doi.org/10.1116/1.591467