@article{oh_nemanich_2002, title={Current-voltage and imaging of TiSi2 islands on Si(001) surfaces using conductive-tip atomic force microscopy}, volume={92}, ISSN={["1089-7550"]}, DOI={10.1063/1.1499545}, abstractNote={Using conducting tip atomic force microscopy (c-AFM), we have measured the current–voltage (I–V) characteristics of individual submicron islands of TiSi2 on Si(100) surfaces, and we have developed an imaging approach that distinguishes the electrical properties of the islands. The Schottky barrier height (SBH) of the submicron TiSi2 islands was deduced from the I–V measurements. The results indicate that there is a significant variation of SBH among the islands on the same surface. The measurements employ a conventional AFM with a heavily B-doped diamond tip to obtain the current–voltage relations. In contact mode AFM, electrical signals are extracted independently from the topographic image. In addition, we have modified the imaging method to probe the local electrical properties of a surface with regions of different conductivity. Using a lock-in technique both phase and amplitude images were obtained, and the resultant image is essentially a map of the differential surface conductivity. Using this method, TiSi2 islands on a Si(100) surface were imaged. This approach can be readily extended to other materials systems.}, number={6}, journal={JOURNAL OF APPLIED PHYSICS}, author={Oh, J and Nemanich, RJ}, year={2002}, month={Sep}, pages={3326–3331} }
 @article{oh_meunier_ham_nemanich_2002, title={Single electron tunneling of nanoscale TiSi2 islands on Si}, volume={92}, ISSN={["0021-8979"]}, DOI={10.1063/1.1499531}, abstractNote={Nanoscale TiSi2 islands are formed by electron beam deposition of a few monolayers of titanium on an atomically clean silicon surface followed by in situ annealing at high temperatures (800–1000 °C). The lateral diameter of typical islands are ∼5 nm, and they form a nanoscale metal–semiconductor interface. Direct probing of the electrical characteristics of these islands on both p- and n-type Si substrates was performed using ultrahigh vacuum scanning tunneling microscopy and scanning tunneling spectroscopy. With the vacuum between the tip and the island as a second tunnel junction, we thus form a double-junction system for observation of single electron tunneling (SET) effects. Moreover, the small dimensions of the system allow room temperature observation. The results showed features in the I–V spectra attributed to single electron tunneling. Features were more evident when the island–Si junction was in reverse bias. For substrates with a thin epitaxial layer of intrinsic Si, the tunneling related features were enhanced for both doping types. The experimental results are compared with the standard theory and numerical values from the fitting are in agreement with the experimental structures. The results indicate that the nanoscale Schottky barrier of the island–substrate interface can be employed as a tunnel barrier in SET structures.}, number={6}, journal={JOURNAL OF APPLIED PHYSICS}, author={Oh, J and Meunier, V and Ham, H and Nemanich, RJ}, year={2002}, month={Sep}, pages={3332–3337} }
 @article{platow_oh_nemanich_sayers_hartman_davis_2002, title={TiC nanoisland formation on 6H-SiC(0001)(Si)}, volume={91}, ISSN={["0021-8979"]}, DOI={10.1063/1.1465121}, abstractNote={Spontaneous formation of titanium carbide nanoislands on silicon carbide substrates has been studied with scanning tunneling microscopy and x-ray absorption near-edge spectroscopy. Scratch-free and atomically flat 6H–SiC(0001)Si substrates were prepared by high temperature hydrogen etching. The surfaces were subsequently cleaned by in situ ultrahigh vacuum annealing. Titanium carbide nanoislands were formed by titanium deposition and annealing at 950 °C. The average width (10–50 nm) and separation of the Ti islands was controlled by varying the titanium coverage (0.1–0.3 nm) and the annealing time (1–20 min). At the lowest coverage, the islands were uniformly distributed over the surface, while at higher coverage the islands tended to collect at the substrate step edges.}, number={9}, journal={JOURNAL OF APPLIED PHYSICS}, author={Platow, W and Oh, J and Nemanich, RJ and Sayers, DE and Hartman, JD and Davis, RF}, year={2002}, month={May}, pages={6081–6084} }
 @article{dunn_torres_oh_cykert_barrett_2001, title={Up-regulation of urokinase-type plasminogen activator by insulin-like growth factor-I depends upon phosphatidylinositol-3 kinase and mitogen-activated protein kinase kinase}, volume={61}, number={4}, journal={Cancer Research}, author={Dunn, S. E. and Torres, J. V. and Oh, J. S. and Cykert, D. M. and Barrett, J. C.}, year={2001}, pages={1367–1374} }
 @article{hyun_barletta_koh_yoo_oh_aspnes_cuomo_2000, title={Effect of Ar+ ion beam in the process of plasma surface modification of PET films}, volume={77}, ISSN={["0021-8995"]}, DOI={10.1002/1097-4628(20000822)77:8<1679::AID-APP4>3.0.CO;2-F}, abstractNote={In general, plasma modified polymer surfaces tend to show short aging time and rapid hydrophobic recovery after treatment. To prevent reorientation from the surface to the bulk, appropriate crosslinking is necessary among the polymer chains. In this work, an Ar+ ion beam was used to provide crosslinking to the surface. Crosslinking was shown by spectroscopic ellipsometry, AFM, and FTIR. Contact angle measurements were performed to see the aging of the modified surfaces. The surface modified with Ar+ ion beam followed by RF plasma treatment exhibited reduced chain mobility and a highly stable hydrophilic surface. © 2000 John Wiley & Sons, Inc. J Appl Polym Sci 77: 1679–1683, 2000}, number={8}, journal={JOURNAL OF APPLIED POLYMER SCIENCE}, author={Hyun, J and Barletta, P and Koh, K and Yoo, S and Oh, J and Aspnes, DE and Cuomo, JJ}, year={2000}, month={Aug}, pages={1679–1683} }