@article{johnson_hong_hinkle_lucovsky_2002, title={Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices}, volume={46}, ISSN={["1879-2405"]}, DOI={10.1016/S0038-1101(02)00152-1}, number={11}, journal={SOLID-STATE ELECTRONICS}, author={Johnson, RS and Hong, JG and Hinkle, C and Lucovsky, G}, year={2002}, month={Nov}, pages={1799–1805} }
 @article{johnson_hong_hinkle_lucovsky_2002, title={Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications}, volume={20}, number={3}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Johnson, R. S. and Hong, J. G. and Hinkle, C. and Lucovsky, G.}, year={2002}, pages={1126–1131} }
 @article{johnson_lucovsky_hong_2002, title={Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys}, volume={190}, ISSN={["1873-5584"]}, DOI={10.1016/S0169-4332(01)00889-3}, number={1-4}, journal={APPLIED SURFACE SCIENCE}, author={Johnson, RS and Lucovsky, G and Hong, JG}, year={2002}, month={May}, pages={43–47} }
 @article{ulrich_johnson_hong_rowe_lucovsky_quinton_madey_2002, title={Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications}, volume={20}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Ulrich, M. D. and Johnson, R. S. and Hong, J. G. and Rowe, J. E. and Lucovsky, G. and Quinton, J. S. and Madey, T. E.}, year={2002}, pages={1732–1738} }
 @article{choi_fleetwood_schrimpf_massengill_galloway_shaneyfelt_meisenheimer_dodd_schwank_lee_et al._2002, title={Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation}, volume={49}, ISSN={["1558-1578"]}, DOI={10.1109/TNS.2002.805389}, number={6}, journal={IEEE TRANSACTIONS ON NUCLEAR SCIENCE}, author={Choi, BK and Fleetwood, DM and Schrimpf, RD and Massengill, LW and Galloway, KF and Shaneyfelt, MR and Meisenheimer, TL and Dodd, PE and Schwank, JR and Lee, YM and et al.}, year={2002}, month={Dec}, pages={3045–3050} }
 @article{choi_fleetwood_massengill_schrimpf_galloway_shaneyfelt_meisenheimer_dodd_schwank_lee_et al._2002, title={Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation}, volume={38}, DOI={10.1049/el:20020119}, number={4}, journal={Electronics Letters}, author={Choi, B. K. and Fleetwood, D. M. and Massengill, L. W. and Schrimpf, R. D. and Galloway, K. F. and Shaneyfelt, M. R. and Meisenheimer, T. L. and Dodd, P. E. and Schwank, J. R. and Lee, Y. M. and et al.}, year={2002}, pages={157–158} }
 @article{wang_powell_johnson_lucovsky_aspnes_2002, title={Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces}, volume={20}, ISSN={["2166-2746"]}, DOI={10.1116/1.1493783}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Wang, JFT and Powell, GD and Johnson, RS and Lucovsky, G and Aspnes, DE}, year={2002}, pages={1699–1705} }
 @article{lazar_misra_johnson_lucovsky_2001, title={Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices}, volume={79}, ISSN={["1077-3118"]}, DOI={10.1063/1.1392973}, number={7}, journal={APPLIED PHYSICS LETTERS}, author={Lazar, HR and Misra, V and Johnson, RS and Lucovsky, G}, year={2001}, month={Aug}, pages={973–975} }
 @article{lucovsky_rayner_johnson_2001, title={Chemical and physical limits on the performance of metal silicate high-k gate dielectrics}, volume={41}, ISSN={["0026-2714"]}, DOI={10.1016/S0026-2714(01)00046-4}, number={7}, journal={MICROELECTRONICS RELIABILITY}, author={Lucovsky, G and Rayner, GB and Johnson, RS}, year={2001}, month={Jul}, pages={937–945} }
 @article{johnson_hong_lucovsky_2001, title={Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)(x)(Al2O3)(1-x) alloys}, volume={19}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Johnson, R. S. and Hong, J. G. and Lucovsky, G.}, year={2001}, pages={1606–1610} }
 @article{lucovsky_rayner_kang_appel_johnson_zhang_sayers_ade_whitten_2001, title={Electronic structure of noncrystalline transition metal silicate and aluminate alloys}, volume={79}, ISSN={["0003-6951"]}, DOI={10.1063/1.1404997}, number={12}, journal={APPLIED PHYSICS LETTERS}, author={Lucovsky, G and Rayner, GB and Kang, D and Appel, G and Johnson, RS and Zhang, Y and Sayers, DE and Ade, H and Whitten, JL}, year={2001}, month={Sep}, pages={1775–1777} }
 @article{johnson_lucovsky_hong_2001, title={Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys}, volume={59}, ISSN={["1873-5568"]}, DOI={10.1016/S0167-9317(01)00673-6}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Johnson, RS and Lucovsky, G and Hong, JG}, year={2001}, month={Nov}, pages={385–391} }
 @article{johnson_lucovsky_baumvol_2001, title={Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition}, volume={19}, ISSN={["1520-8559"]}, DOI={10.1116/1.1379316}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Johnson, RS and Lucovsky, G and Baumvol, I}, year={2001}, pages={1353–1360} }
 @article{johnson_niimi_lucovsky_2000, title={New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing}, volume={18}, ISSN={["0734-2101"]}, DOI={10.1116/1.582331}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS}, author={Johnson, RS and Niimi, H and Lucovsky, G}, year={2000}, pages={1230–1233} }