@article{lyle_jiang_das_porter_2019, title={Schottky contacts to beta-Ga2O3}, ISBN={["978-0-12-814521-0"]}, DOI={10.1016/B978-0-12-814521-0.00011-7}, abstractNote={This chapter reviews published literature on Schottky contacts to β-Ga2O3, a wide band gap semiconductor that has a low predicted on-resistance—a key performance advantage for high power Schottky diodes. Following a brief discussion of the general physics associated with the formation and measurement of metal–semiconductor Schottky barriers, reports on different Schottky contact metals (e.g., Au, Cu, Ir, Ni, Pd, and Pt) to β-Ga2O3 are summarized. Most of the reported contacts were fabricated directly on β-Ga2O3 single-crystal wafer surfaces, with one of the following crystallographic orientations: (010), (100), or (001). Details about the substrate surface preparation prior to metal deposition, and contact processing treatments are provided when available. The Schottky barrier heights are typically reported in the range ~ 1.0–1.5 eV and often show limited dependence on the metal work function, although there may be some dependence on factors such as crystal orientation. Both point and extended defects in Ga2O3 have been identified, but their effects on Schottky contacts are at the very early stage of investigation. Ga2O3 Schottky barrier diodes with Eb > 1 kV, and depletion-mode MESFETs, represent early devices that employ Schottky contacts.}, journal={GALLIUM OXIDE: TECHNOLOGY, DEVICES AND APPLICATIONS}, author={Lyle, Luke A. M. and Jiang, Lai and Das, Kalyan K. and Porter, Lisa M.}, year={2019}, pages={231–261} }
 @article{kulkarni_porter_koeck_tang_nemanich_2008, title={Electrical and photoelectrical characterization of undoped and S-doped nanocrystalline diamond films}, volume={103}, ISSN={["1089-7550"]}, DOI={10.1063/1.2908884}, abstractNote={Nanocrystalline diamond (NCD) films are being intensively researched for a variety of potential applications, such as optical windows, electrochemical electrodes, and electron emitting surfaces for field emission displays. In this study Zr, Ti, Cu, and Pt on intrinsic and lightly sulfur-doped (n-type) NCD films were electrically and photoelectrically characterized. Intrinsic and sulfur-doped NCD films were synthesized on 1in. diameter quartz and silicon substrates by microwave plasma assisted chemical vapor deposition. All metals showed linear (Ohmic) current-voltage characteristics in the as-deposited state. The Schottky barrier heights (ΦB) at the metal-film interface were investigated using x-ray and ultraviolet photoelectron spectroscopies. The undoped NCD films exhibited a negative electron affinity and a band gap of 5.0±0.4eV. The ΦB were calculated based on this band gap measurement and the consistent indication from Hall measurements that the films are n-type. The ΦB values were calculated from shifts in the core-level (C1s) peaks immediately obtained before and after in situ, successive metal depositions. The ΦB values for Zr, Ti, and Pt on undoped films were calculated to be 3.3, 3.2, and 3.7eV, respectively. The S-doped films also showed increasing ΦB with metal work functions: 3.0, 3.1, and 3.4eV for Zr, Ti, and Pt, respectively. In general accordance with the barrier height trends, the specific contact resistivity (ρc) values increased with the metal work functions for both undoped and S-doped films. For the undoped films ρc increased from 3×10−5Ωcm2 for Zr to 6.4×10−3Ωcm2 for Pt. The ρc values for the S-doped films were approximately two orders of magnitude lower than those for the undoped films: 3.5×10−7–4.5×10−5Ωcm2 for Zr and Pt, respectively. The Hall-effect measurements indicated that the average sheet resistivity and carrier concentration values were 0.16 and 3.5×1018cm−3 for the undoped films and 0.15Ωcm and 4.9×1019cm−3 for the S-doped films.}, number={8}, journal={JOURNAL OF APPLIED PHYSICS}, author={Kulkarni, P. and Porter, L. M. and Koeck, F. A. M. and Tang, Y. -J. and Nemanich, R. J.}, year={2008}, month={Apr} }
 @article{crofton_porter_williams_1997, title={The physics of ohmic contacts to SiC}, volume={202}, number={1}, journal={Physica Status Solidi. B, Basic Solid State Physics}, author={Crofton, J. and Porter, L. M. and Williams, J. R.}, year={1997}, pages={581–603} }