@article{liu_pell_conway_roberson_1998, title={Behavior of molybdenum nitrides as materials for electrochemical capacitors - Comparison with ruthenium oxide}, volume={145}, ISSN={["0013-4651"]}, DOI={10.1149/1.1838571}, abstractNote={Ruthenium oxide (RuO{sub 2}), formed as a thin film on a Ru or Ti metal substrate, exhibits a large specific (cm{sup {minus}2}) and almost constant, electrochemical capacitance over a 1.35 V range in aqueous H{sub 2}SO{sub 4}. This behavior has led to its investigation and use as a material for fabrication of supercapacitor devices. However, its cost has encouraged search for other materials exhibiting similar behavior. Work reported in the present paper evaluates two nitrides of Mo, Mo{sub 2}N and MoN, as substitutes for RuO{sub 2}. It is shown that very similar capacitance behavior to that of RuO{sub 2} films arises, e.g., in cyclic voltammetry and dc charging curves; in the former, almost mirror-image anodic and cathodic current-response profiles, characteristic of a capacitor, arise. However, the nitride materials have a substantially smaller voltage operating range of only some 0.7 V due to electrochemical decomposition above ca. 0.7 V vs. RHE. This limits their usefulness as a substitute for RuO{sub 2}. Of interest is that the nitride films exhibit potential-decay and potential-recovery on open circuit after respective charge and forced discharge. The decay and recovery processes are logarithmic in time, indicating the role of internal faradaic charge redistribution processes.}, number={6}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Liu, TC and Pell, WG and Conway, BE and Roberson, SL}, year={1998}, month={Jun}, pages={1882–1888} }