@article{lucovsky_niimi_2004, title={Remote plasma-assisted oxidation of SiC: a low temperature process for SiC-SiO2 interface formation that eliminates interfacial Si oxycarbide transition regions}, volume={16}, DOI={10.1088/0953-8984/16/17/018}, number={17}, journal={Journal of Physics. Condensed Matter}, author={Lucovsky, G. and Niimi, H.}, year={2004}, pages={S1815–1837} }
 @article{khandelwal_niimi_lucovsky_lamb_2002, title={Low-temperature Ar/N-2 remote plasma nitridation of SiO2 thin films}, volume={20}, DOI={10.1116/1.1513635}, number={6}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Khandelwal, A. and Niimi, H. and Lucovsky, G. and Lamb, H. H.}, year={2002}, pages={1989–1996} }
 @article{niimi_khandelwal_lamb_lucovsky_2001, title={Reaction pathways in remote plasma nitridation of ultrathin SiO2 films}, volume={91}, DOI={10.1063/1.1419208}, number={1}, journal={Journal of Applied Physics}, author={Niimi, H. and Khandelwal, A. and Lamb, H. H. and Lucovsky, G.}, year={2001}, pages={48–55} }
 @article{niimi_yang_lucovsky_keister_rowe_2000, title={Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO2 interfaces}, volume={166}, DOI={10.1016/S0169-4332(00)00480-3}, number={1-4}, journal={Applied Surface Science}, author={Niimi, H. and Yang, H. Y. and Lucovsky, G. and Keister, J. W. and Rowe, J. E.}, year={2000}, pages={485–491} }
 @article{brillson_young_white_schafer_niimi_lee_lucovsky_2000, title={Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces}, volume={18}, number={3}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Brillson, L. J. and Young, A. P. and White, B. D. and Schafer, J. and Niimi, H. and Lee, Y. M. and Lucovsky, G.}, year={2000}, pages={1737–1741} }
 @article{lucovsky_niimi_wu_yang_2000, title={Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces}, volume={159}, DOI={10.1016/S0169-4332(00)00071-4}, number={2000 June}, journal={Applied Surface Science}, author={Lucovsky, G. and Niimi, H. and Wu, Y. and Yang, H.}, year={2000}, pages={50–61} }
 @article{lucovsky_yang_niimi_keister_rowe_thorpe_phillips_2000, title={Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics}, volume={18}, number={3}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Yang, H. and Niimi, H. and Keister, J. W. and Rowe, J. E. and Thorpe, M. F. and Phillips, J. C.}, year={2000}, pages={1742–1748} }
 @article{lucovsky_yang_niimi_thorpe_phillips_2000, title={Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics}, volume={18}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Yang, H. and Niimi, H. and Thorpe, M. F. and Phillips, J. C.}, year={2000}, pages={2179–2186} }
 @article{johnson_niimi_lucovsky_2000, title={New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing}, volume={18}, DOI={10.1116/1.582331}, number={4}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Johnson, R. S. and Niimi, H. and Lucovsky, G.}, year={2000}, pages={1230–1233} }
 @article{lucovsky_yang_wu_niimi_2000, title={Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics}, volume={374}, DOI={10.1016/S0040-6090(00)01153-6}, number={2}, journal={Thin Solid Films}, author={Lucovsky, G. and Yang, H. Y. and Wu, Y. and Niimi, H.}, year={2000}, pages={217–227} }
 @article{lucovsky_wu_niimi_yang_keister_rowe_2000, title={Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness}, volume={18}, DOI={10.1116/1.582318}, number={4}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Lucovsky, G. and Wu, Y. and Niimi, H. and Yang, H. and Keister, J. and Rowe, J. E.}, year={2000}, pages={1163–1168} }
 @article{yang_niimi_keister_lucovsky_2000, title={The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices}, volume={21}, DOI={10.1109/55.821673}, number={2}, journal={IEEE Electron Device Letters}, author={Yang, H. and Niimi, H. and Keister, J. W. and Lucovsky, G.}, year={2000}, pages={76–78} }
 @article{keister_rowe_kolodziej_niimi_madey_lucovsky_1999, title={Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy}, volume={17}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Keister, J. W. and Rowe, J. E. and Kolodziej, J. J. and Niimi, H. and Madey, T. E. and Lucovsky, G.}, year={1999}, pages={1831–1835} }
 @article{lucovsky_wu_niimi_misra_phillips_1999, title={Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics}, volume={17}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Wu, Y. and Niimi, H. and Misra, V. and Phillips, J. C.}, year={1999}, pages={1806–1812} }
 @article{lucovsky_wu_niimi_misra_phillips_1999, title={Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics}, volume={74}, DOI={10.1063/1.123728}, number={14}, journal={Applied Physics Letters}, author={Lucovsky, G. and Wu, Y. and Niimi, H. and Misra, V. and Phillips, J. C.}, year={1999}, pages={2005–2007} }
 @article{young_bandhu_schafer_niimi_lucovsky_1999, title={Cathodoluminescence spectroscopy of nitrided SiO2-Si interfaces}, volume={17}, DOI={10.1116/1.581806}, number={4}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Young, A. P. and Bandhu, R. and Schafer, J. and Niimi, H. and Lucovsky, G.}, year={1999}, pages={1258–1262} }
 @article{therrien_niimi_gehrke_lucovsky_davis_1999, title={Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces}, volume={48}, DOI={10.1016/s0167-9317(99)00394-9}, number={1-4}, journal={Microelectronic Engineering}, author={Therrien, R. and Niimi, H. and Gehrke, T. and Lucovsky, G. and Davis, R. F.}, year={1999}, pages={303–306} }
 @article{misra_lazar_wang_wu_niimi_lucovsky_wortman_hauser_1999, title={Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition}, volume={17}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Misra, V. and Lazar, H. and Wang, Z. and Wu, Y. and Niimi, H. and Lucovsky, G. and Wortman, J. J. and Hauser, J. R.}, year={1999}, pages={1836–1839} }
 @article{niimi_lucovsky_1999, title={Monolayer-level controlled incorporation of nitrogen at Si-SiO2 interfaces using remote plasma processing}, volume={17}, DOI={10.1116/1.582041}, number={6}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Niimi, H. and Lucovsky, G.}, year={1999}, pages={3185–3196} }
 @article{niimi_lucovsky_1999, title={Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics}, volume={17}, number={6}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Niimi, H. and Lucovsky, G.}, year={1999}, pages={2610–2621} }
 @article{keister_rowe_kolodziej_niimi_tao_madey_lucovsky_1999, title={Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy}, volume={17}, DOI={10.1116/1.581805}, number={4}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Keister, J. W. and Rowe, J. E. and Kolodziej, J. J. and Niimi, H. and Tao, H. S. and Madey, T. E. and Lucovsky, G.}, year={1999}, pages={1250–1257} }
 @article{wu_niimi_yang_lucovsky_fair_1999, title={Suppression of boron transport out of p(+) polycrystalline silicon at polycrystalline silicon dielectric interfaces}, volume={17}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Wu, Y. and Niimi, H. and Yang, H. and Lucovsky, G. and Fair, R. B.}, year={1999}, pages={1813–1822} }
 @article{yang_niimi_wu_lucovsky_keister_rowe_1999, title={The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics}, volume={48}, DOI={10.1016/s0167-9317(99)00395-0}, number={1-4}, journal={Microelectronic Engineering}, author={Yang, H. and Niimi, H. and Wu, Y. and Lucovsky, G. and Keister, J. W. and Rowe, J. E.}, year={1999}, pages={307–310} }
 @article{young_schafer_jessen_bandhu_brillson_lucovsky_niimi_1998, title={Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces}, volume={16}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Young, A. P. and Schafer, J. and Jessen, G. H. and Bandhu, R. and Brillson, L. J. and Lucovsky, G. and Niimi, H.}, year={1998}, pages={2177–2181} }
 @article{koh_niimi_lucovsky_green_1998, title={Controlled nitrogen incorporation at Si-SiO2 interfaces by remote plasma-assisted processing}, volume={37}, DOI={10.1143/JJAP.37.709}, number={2}, journal={Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers}, author={Koh, K. and Niimi, H. and Lucovsky, Gerald and Green, M. L.}, year={1998}, pages={709–714} }
 @article{schafer_young_brillson_niimi_lucovsky_1998, title={Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO2 and silicon}, volume={73}, DOI={10.1063/1.122003}, number={6}, journal={Applied Physics Letters}, author={Schafer, J. and Young, A. P. and Brillson, L. J. and Niimi, H. and Lucovsky, G.}, year={1998}, pages={791–793} }
 @article{lucovsky_niimi_golz_kurz_1998, title={Differences between silicon oxycarbide regions at SiC-SiO2 prepared by plasma-assisted oxidation and thermal oxidations}, volume={123}, DOI={10.1016/S0169-4332(97)00469-8}, number={1998 Jan.}, journal={Applied Surface Science}, author={Lucovsky, G. and Niimi, H. and Golz, A. and Kurz, H.}, year={1998}, pages={435–439} }
 @article{lucovsky_niimi_koh_green_1998, title={Monolayer nitrogen atom incorporation at buried Si SiO2 interfaces: preparation by remote plasma oxidation/nitridation and characterization by on line auger electron spectroscopy}, volume={5}, DOI={10.1142/S0218625X98000323}, number={1}, journal={Surface Review and Letters}, author={Lucovsky, G. and Niimi, H. and Koh, K. and Green, M. L.}, year={1998}, pages={167–173} }
 @article{lucovsky_niimi_wu_parker_hauser_1998, title={Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing}, volume={16}, DOI={10.1116/1.581291}, number={3 pt.2}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Lucovsky, G. and Niimi, H. and Wu, Y. and Parker, C. R. and Hauser, J. R.}, year={1998}, pages={1721–1729} }
 @article{koh_niimi_lucovsky_1998, title={Plasma-engineered Si-SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O}, volume={98}, DOI={10.1016/S0257-8972(97)00392-7}, number={1-3}, journal={Surface & Coatings Technology}, author={Koh, K. and Niimi, H. and Lucovsky, G.}, year={1998}, pages={1524–1528} }
 @article{yang_niimi_lucovsky_1998, title={Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices}, volume={83}, DOI={10.1063/1.366976}, number={4}, journal={Journal of Applied Physics}, author={Yang, H. Y. and Niimi, H. and Lucovsky, G.}, year={1998}, pages={2327–2337} }
 @article{niimi_lucovsky_1998, title={Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation}, volume={98}, DOI={10.1016/S0257-8972(97)00389-7}, number={1-3}, journal={Surface & Coatings Technology}, author={Niimi, H. and Lucovsky, G.}, year={1998}, pages={1529–1533} }
 @article{lucovsky_banerjee_niimi_koh_hinds_meyer_lupke_kurz_1997, title={Elimination of suboxide transition regions at Si-SiO(2) interfaces by rapid thermal annealing at 900 degrees C}, volume={117}, DOI={10.1016/S0169-4332(97)80079-7}, number={1997 June}, journal={Applied Surface Science}, author={Lucovsky, G. and Banerjee, A. and Niimi, Hiroaki and Koh, Kwangil and Hinds, B. and Meyer, C. and Lupke, G. and Kurz, H.}, year={1997}, pages={202–206} }
 @article{golz_lucovsky_koh_wolfe_niimi_kurz_1997, title={Plasma-assisted formation of low defect density SiC-SiO2 interfaces}, volume={15}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Golz, A. and Lucovsky, G. and Koh, K. and Wolfe, D. and Niimi, H. and Kurz, H.}, year={1997}, pages={1097–1104} }
 @article{niimi_koh_lucovsky_1997, title={Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation}, volume={127}, DOI={10.1016/S0168-583X(96)00958-5}, number={1997 May}, journal={Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms}, author={Niimi, H. and Koh, K. and Lucovsky, G.}, year={1997}, pages={364–368} }