@article{lucovsky_rayner_kang_hinkle_hong_2004, title={A  spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys}, volume={566}, DOI={10.1016/j.susc.2004.06.010}, number={Sep 20 2004}, journal={Surface Science}, author={Lucovsky, G. and Rayner, G. B. and Kang, D. and Hinkle, C. L. and Hong, J. G.}, year={2004}, pages={772–776} }
 @article{lucovsky_rayner_kang_hinkle_hong_2004, title={A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys}, volume={234}, DOI={10.1016/j.apsusc.2004.05.075}, number={37990}, journal={Applied Surface Science}, author={Lucovsky, G. and Rayner, G. B. and Kang, D. and Hinkle, C. L. and Hong, J. G.}, year={2004}, pages={429–433} }
 @article{rayner_kang_hinkle_hong_lucovsky_2004, title={Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity}, volume={72}, DOI={10.1016/j.mee.2004.01.008}, number={04-Jan}, journal={Microelectronic Engineering}, author={Rayner, G. B. and Kang, D. and Hinkle, C. L. and Hong, J. G. and Lucovsky, G.}, year={2004}, pages={304–309} }
 @article{rayner_kang_lucovsky_2004, title={Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity}, volume={338-40}, DOI={10.1016/j.jnoncrysol.2004.02.042}, number={Jun 15 2004}, journal={Journal of Non-crystalline Solids}, author={Rayner, G. B. and Kang, D. and Lucovsky, G.}, year={2004}, pages={151–154} }
 @article{lucovsky_rayner_zhang_appel_whitten_2003, title={Band offset energies in zirconium silicate Si alloys}, volume={216}, DOI={10.1016/S0169-4332(03)00429-X}, number={04-Jan}, journal={Applied Surface Science}, author={Lucovsky, G. and Rayner, B. and Zhang, Y. and Appel, G. and Whitten, J.}, year={2003}, pages={215–222} }
 @article{bae_rayner_lucovsky_2003, title={Device-quality GaN-dielectric interfaces by 300 degrees C remote plasma processing}, volume={216}, DOI={10.1016/S0169-4332(03)00497-5}, number={04-Jan}, journal={Applied Surface Science}, author={Bae, C. and Rayner, G. B. and Lucovsky, G.}, year={2003}, pages={119–123} }
 @article{lucovsky_zhang_rayner_appel_ade_whitten_2002, title={Electronic structure of high-k transition metal oxides and their silicate and aluminate alloys}, volume={20}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Zhang, Y. and Rayner, G. B. and Appel, G. and Ade, H. and Whitten, J. L.}, year={2002}, pages={1739–1747} }
 @article{rayner_kang_zhang_lucovsky_2002, title={Nonlinear composition dependence of x-ray photoelectron spectroscopy and Auger electron spectroscopy features in plasma-deposited zirconium silicate alloy thin films}, volume={20}, DOI={10.1116/1.1493788}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Rayner, G. B. and Kang, D. and Zhang, Y. and Lucovsky, G.}, year={2002}, pages={1748–1758} }
 @article{lucovsky_rayner_johnson_2001, title={Chemical and physical limits on the performance of metal silicate high-k gate dielectrics}, volume={41}, DOI={10.1016/S0026-2714(01)00046-4}, number={7}, journal={Microelectronics Reliability}, author={Lucovsky, G. and Rayner, G. B. and Johnson, R. S.}, year={2001}, pages={937–945} }
 @article{lucovsky_rayner_kang_appel_johnson_zhang_sayers_ade_whitten_2001, title={Electronic structure of noncrystalline transition metal silicate and aluminate alloys}, volume={79}, DOI={10.1063/1.1404997}, number={12}, journal={Applied Physics Letters}, author={Lucovsky, G. and Rayner, G. B. and Kang, D. and Appel, G. and Johnson, R. S. and Zhang, Y. and Sayers, D. E. and Ade, H. and Whitten, J. L.}, year={2001}, pages={1775–1777} }
 @article{lucovsky_rayner_2000, title={Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys}, volume={77}, DOI={10.1063/1.1320860}, number={18}, journal={Applied Physics Letters}, author={Lucovsky, G. and Rayner, G. B.}, year={2000}, pages={2912–2914} }