@article{hartlieb_roskowski_davis_platow_nemanich_2003, title={Response to "Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]"}, volume={93}, ISSN={["0021-8979"]}, DOI={10.1063/1.1542911}, number={6}, journal={JOURNAL OF APPLIED PHYSICS}, author={Hartlieb, PJ and Roskowski, A and Davis, RF and Platow, W and Nemanich, RJ}, year={2003}, month={Mar}, pages={3679–3679} }
 @article{hartlieb_roskowski_davis_platow_nemanich_2002, title={Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces}, volume={91}, ISSN={["1089-7550"]}, DOI={10.1063/1.1424060}, abstractNote={Characterization of chemical vapor cleaned, Mg-doped, p-type GaN(0001) surfaces and Pd contacts sequentially deposited on these surfaces has been conducted using x-ray and ultraviolet photoelectron spectroscopies and low-energy electron diffraction. The band bending and the electron affinity at the cleaned p-GaN surface were 1.4±0.1 eV and 3.1±0.1 eV, respectively. A previously unidentified band of surface states was observed at ∼1.0 eV below the Fermi level on this surface. The Pd grew epitaxially on the cleaned surface in a layer-by-layer mode and formed an abrupt, unreacted metal–semiconductor interface. The induced Fermi level movement with Pd deposition has been attributed to a complex interaction between extrinsic and intrinsic surface states as well as metal induced gap states. The final Schottky barrier height at the Pd/p-GaN interface was 1.3±0.1 eV; the interface dipole contribution was 0.4±0.1 eV.}, number={2}, journal={JOURNAL OF APPLIED PHYSICS}, author={Hartlieb, PJ and Roskowski, A and Davis, RF and Platow, W and Nemanich, RJ}, year={2002}, month={Jan}, pages={732–738} }
 @article{platow_oh_nemanich_sayers_hartman_davis_2002, title={TiC nanoisland formation on 6H-SiC(0001)(Si)}, volume={91}, ISSN={["0021-8979"]}, DOI={10.1063/1.1465121}, abstractNote={Spontaneous formation of titanium carbide nanoislands on silicon carbide substrates has been studied with scanning tunneling microscopy and x-ray absorption near-edge spectroscopy. Scratch-free and atomically flat 6H–SiC(0001)Si substrates were prepared by high temperature hydrogen etching. The surfaces were subsequently cleaned by in situ ultrahigh vacuum annealing. Titanium carbide nanoislands were formed by titanium deposition and annealing at 950 °C. The average width (10–50 nm) and separation of the Ti islands was controlled by varying the titanium coverage (0.1–0.3 nm) and the annealing time (1–20 min). At the lowest coverage, the islands were uniformly distributed over the surface, while at higher coverage the islands tended to collect at the substrate step edges.}, number={9}, journal={JOURNAL OF APPLIED PHYSICS}, author={Platow, W and Oh, J and Nemanich, RJ and Sayers, DE and Hartman, JD and Davis, RF}, year={2002}, month={May}, pages={6081–6084} }
 @article{platow_wood_tracy_burnette_nemanich_sayers_2001, title={Formation of cobalt disilicide films on (root 3 x root 3)6H-SiC(0001)}, volume={63}, ISSN={["1550-235X"]}, DOI={10.1103/physrevb.63.115312}, abstractNote={This paper presents a detailed study of thin Co films grown directly, sequentially, and by codeposition with Si on the $(\sqrt{3}\ifmmode\times\else\texttimes\fi{}\sqrt{3})\ensuremath{-}R30\ifmmode^\circ\else\textdegree\fi{}$ surface of $6H\ensuremath{-}\mathrm{SiC}(0001).$ The structure, chemistry, and morphology of the films were determined using x-ray absorption fine structure, x-ray photoelectron spectroscopy, Auger electron spectroscopy, and atomic force microscopy. For directly deposited Co films (1--8 nm) graphite layers form on top of the film surface during annealing, whereas Co stays mainly unreacted over a temperature range of 300--1000 \ifmmode^\circ\else\textdegree\fi{}C. The formation of ${\mathrm{CoSi}}_{2}$ is achieved by sequential and codeposition of Co and Si. Films annealed at 550 \ifmmode^\circ\else\textdegree\fi{}C are polycrystalline and further annealing to 650 \ifmmode^\circ\else\textdegree\fi{}C causes no C segregation, but there is islanding of the films. Attempts to improve film morphology and homogeneity including applying a template method and varying growth temperature are also reported.}, number={11}, journal={PHYSICAL REVIEW B}, author={Platow, W and Wood, DK and Tracy, KM and Burnette, JE and Nemanich, RJ and Sayers, DE}, year={2001}, month={Mar} }
 @article{platow_nemanich_sayers_hartman_davis_2001, title={Growth of epitaxial CoSi2 on 6H-SiC(0001)(Si)}, volume={90}, ISSN={["1089-7550"]}, DOI={10.1063/1.1412842}, abstractNote={Epitaxial growth of (111)-oriented CoSi2 has been achieved on a scratch-free 6H-SiC(0001)Si substrate. The surface was prepared using atmospheric hydrogen etching and ultrahigh vacuum Si cleaning. A high-quality CoSi2 thin film was obtained by a modified template method and co-deposition of Co and Si at 550 °C. The structure and morphology of the film is studied by means of reflection high electron energy diffraction, x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy.}, number={12}, journal={JOURNAL OF APPLIED PHYSICS}, author={Platow, W and Nemanich, RJ and Sayers, DE and Hartman, JD and Davis, RF}, year={2001}, month={Dec}, pages={5924–5927} }