@article{barabash_ice_liu_einfeldt_roskowski_davis_2005, title={Local strain, defects, and crystallographic tilt in GaN(0001) layers grown by maskless pendeo-epitaxy from x-ray microdiffraction}, volume={97}, number={1}, journal={Journal of Applied Physics}, author={Barabash, R. I. and Ice, G. E. and Liu, W. and Einfeldt, S. and Roskowski, A. M. and Davis, R. F.}, year={2005} }
 @article{barabash_ice_liu_einfeldt_hommel_roskowski_davis_2005, title={White X-ray microbeam analysis of strain and crystallographic tilt in GaN layers grown by maskless pendeoepitaxy}, volume={202}, number={5}, journal={Physica Status Solidi. A, Applications and Materials Science}, author={Barabash, R. I. and Ice, G. E. and Liu, W. and Einfeldt, S. and Hommel, D. and Roskowski, A. M. and Davis, R. F.}, year={2005}, pages={732–738} }
 @article{paskova_valcheva_paskov_monemar_roskowski_davis_beaumont_gibart_2004, title={HVPE-GaN: comparison of emission properties and microstructure of films grown on different laterally overgrown templates}, volume={13}, DOI={10.1016/j.diamond.2003.10.072}, number={08-Apr}, journal={Diamond and Related Materials}, author={Paskova, T. and Valcheva, E. and Paskov, P. P. and Monemar, B. and Roskowski, A. M. and Davis, R. F. and Beaumont, B. and Gibart, P.}, year={2004}, pages={1125–1129} }
 @article{hartman_roskowski_reitmeier_tracy_davis_nemanich_2003, title={Characterization of hydrogen etched 6h-sic(0001) substrates and subsequently grown AlN films}, volume={21}, DOI={10.1116/1.1539080}, number={2}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Hartman, J. D. and Roskowski, A. M. and Reitmeier, Z. J. and Tracy, K. M. and Davis, R. F. and Nemanich, R. J.}, year={2003}, pages={394–400} }
 @article{preble_miraglia_roskowski_vetter_dudley_davis_2003, title={Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers}, volume={258}, DOI={10.1016/S0022-0248(03)01515-X}, number={1/2}, journal={Journal of Crystal Growth}, author={Preble, E. A. and Miraglia, P. Q. and Roskowski, A. M. and Vetter, W. M. and Dudley, M. and Davis, R. F.}, year={2003}, pages={75–83} }
 @article{collazo_schlesser_roskowski_miraglia_davis_sitar_2003, title={Electron energy distribution during high-field transport in AlN}, volume={93}, DOI={10.1063/1.1543633}, number={5}, journal={Journal of Applied Physics}, author={Collazo, R. and Schlesser, R. and Roskowski, A. and Miraglia, P. and Davis, R. F. and Sitar, Z.}, year={2003}, pages={2765–2771} }
 @article{smith_mecouch_miraglia_roskowski_hartlieb_davis_2003, title={Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy}, volume={257}, DOI={10.1016/S0022-0248(03)01469-6}, number={3/4}, journal={Journal of Crystal Growth}, author={Smith, T. P. and Mecouch, W. J. and Miraglia, P. Q. and Roskowski, A. M. and Hartlieb, P. J. and Davis, R. F.}, year={2003}, pages={255–262} }
 @article{miraglia_preble_roskowski_einfeldt_davis_2003, title={Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures}, volume={253}, DOI={10.1016/S0022-0248(03)00970-9}, number={1-4}, journal={Journal of Crystal Growth}, author={Miraglia, P. Q. and Preble, E. A. and Roskowski, A. M. and Einfeldt, S. and Davis, R. F.}, year={2003}, pages={16–25} }
 @article{miraglia_preble_roskowski_einfeldt_lim_liliental-weber_davis_2003, title={Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures}, volume={437}, DOI={10.1016/S0040-6090(03)00611-4}, number={37623}, journal={Thin Solid Films}, author={Miraglia, P. Q. and Preble, E. A. and Roskowski, A. M. and Einfeldt, S. and Lim, S. H. and Liliental-Weber, Z. and Davis, R. F.}, year={2003}, pages={140–149} }
 @article{schwarz_schuck_mason_grober_roskowski_einfeldt_davis_2003, title={Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC}, volume={67}, number={4}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Schwarz, U. T. and Schuck, P. J. and Mason, M. D. and Grober, R. D. and Roskowski, A. M. and Einfeldt, S. and Davis, R. F.}, year={2003}, pages={045321–1} }
 @article{hartlieb_roskowski_davis_platow_nemanich_2003, title={Response to 'Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]'}, volume={93}, DOI={10.1063/1.1542911}, number={6}, journal={Journal of Applied Physics}, author={Hartlieb, P. J. and Roskowski, A. and Davis, R. F. and Platow, W. and Nemanich, R. J.}, year={2003}, pages={3679} }
 @article{hartlieb_roskowski_davis_nemanich_2002, title={Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN}, volume={91}, DOI={10.1063/1.1471578}, number={11}, journal={Journal of Applied Physics}, author={Hartlieb, P. J. and Roskowski, A. and Davis, R. F. and Nemanich, R. J.}, year={2002}, pages={9151–9160} }
 @article{schuck_grober_roskowski_einfeldt_davis_2002, title={Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence}, volume={81}, DOI={10.1063/1.1506948}, number={11}, journal={Applied Physics Letters}, author={Schuck, P. J. and Grober, R. D. and Roskowski, A. M. and Einfeldt, S. and Davis, R. F.}, year={2002}, pages={1984–1986} }
 @article{roskowski_preble_einfeldt_miraglia_davis_2002, title={Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence}, volume={38}, DOI={10.1109/JQE.2002.801005}, number={8}, journal={IEEE Journal of Quantum Electronics}, author={Roskowski, A. M. and Preble, E. A. and Einfeldt, S. and Miraglia, P. M. and Davis, R. F.}, year={2002}, pages={1006–1016} }
 @article{roskowski_preble_einfeldt_miraglia_davis_2002, title={Maskless pendeo-epitaxial growth of GaN films}, volume={31}, DOI={10.1007/s11664-002-0095-6}, number={5}, journal={Journal of Electronic Materials}, author={Roskowski, A. M. and Preble, E. A. and Einfeldt, S. and Miraglia, P. M. and Davis, R. F.}, year={2002}, pages={421–428} }
 @article{hartlieb_roskowski_davis_platow_nemanich_2002, title={Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces}, volume={91}, DOI={10.1063/1.1424060}, number={2}, journal={Journal of Applied Physics}, author={Hartlieb, P. J. and Roskowski, A. and Davis, R. F. and Platow, W. and Nemanich, R. J.}, year={2002}, pages={732–738} }
 @article{roskowski_preble_einfeldt_miraglia_schuck_grober_davis_2002, title={Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy}, volume={10}, number={4}, journal={Opto-electronics Review}, author={Roskowski, A. M. and Preble, E. A. and Einfeldt, S. and Miraglia, P. M. and Schuck, J. and Grober, R. and Davis, R. F.}, year={2002}, pages={261–270} }
 @article{einfeldt_roskowski_preble_davis_2002, title={Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy}, volume={80}, DOI={10.1063/1.1448145}, number={6}, journal={Applied Physics Letters}, author={Einfeldt, S. and Roskowski, A. M. and Preble, E. A. and Davis, R. F.}, year={2002}, pages={953–955} }
 @article{roskowski_felder_bullard_2002, title={Student Use (and Non-Use) of Instructional Technology}, volume={2}, number={2002}, journal={Journal of SMET Education: Innovations and Research}, author={Roskowski, A. M. and Felder, R. M. and Bullard, L.}, year={2002}, pages={41–45} }
 @article{roskowski_miraglia_preble_einfeldt_davis_2002, title={Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE}, volume={241}, DOI={10.1016/S0022-0248(02)00943-0}, number={1-2}, journal={Journal of Crystal Growth}, author={Roskowski, A. M. and Miraglia, P. Q. and Preble, E. A. and Einfeldt, S. and Davis, R. F.}, year={2002}, pages={141–150} }
 @inproceedings{roskowski_felder_bullard_2001, title={Instructional software: if you build It, they may or may not come}, booktitle={2001 ASEE Annual Conference Proceedings, ASEE, June 2001}, publisher={Washington, D.C.: American Society for Engineering Education}, author={Roskowski, A. M. and Felder, R.M. and Bullard, L. G.}, year={2001} }
 @article{roskowski_miraglia_preble_einfeldt_stiles_davis_schuck_grober_schwarz_2001, title={Strain and dislocation reduction in maskless pendeo-epitaxy GaN thin films}, volume={188}, DOI={10.1002/1521-396x(200112)188:2<729::aid-pssa729>3.0.co;2-w}, number={2}, journal={Physica Status Solidi. A, Applications and Materials Science}, author={Roskowski, A. M. and Miraglia, P. Q. and Preble, E. A. and Einfeldt, S. and Stiles, T. and Davis, R. F. and Schuck, J. and Grober, R. and Schwarz, U.}, year={2001}, pages={729–732} }