Amy Michel Roskowski

Barabash, R. I., Ice, G. E., Liu, W., Einfeldt, S., Roskowski, A. M., & Davis, R. F. (2005). Local strain, defects, and crystallographic tilt in GaN(0001) layers grown by maskless pendeo-epitaxy from x-ray microdiffraction. Journal of Applied Physics, 97(1).

Barabash, R. I., Ice, G. E., Liu, W., Einfeldt, S., Hommel, D., Roskowski, A. M., & Davis, R. F. (2005). White X-ray microbeam analysis of strain and crystallographic tilt in GaN layers grown by maskless pendeoepitaxy. Physica Status Solidi. A, Applications and Materials Science, 202(5), 732–738.

Paskova, T., Valcheva, E., Paskov, P. P., Monemar, B., Roskowski, A. M., Davis, R. F., … Gibart, P. (2004). HVPE-GaN: comparison of emission properties and microstructure of films grown on different laterally overgrown templates. Diamond and Related Materials, 13(4-8), 1125–1129. https://doi.org/10.1016/j.diamond.2003.10.072

Hartman, J. D., Roskowski, A. M., Reitmeier, Z. J., Tracy, K. M., Davis, R. F., & Nemanich, R. J. (2003). Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AlN films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(2), 394–400. https://doi.org/10.1116/1.1539080

Preble, E. A., Miraglia, P. Q., Roskowski, A. M., Vetter, W. M., Dudley, M., & Davis, R. F. (2003). Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers. JOURNAL OF CRYSTAL GROWTH, 258(1-2), 75–83. https://doi.org/10.1016/S0022-0248(03)01515-X

Collazo, R., Schlesser, R., Roskowski, A., Miraglia, P., Davis, R. F., & Sitar, Z. (2003). Electron energy distribution during high-field transport in AlN. JOURNAL OF APPLIED PHYSICS, 93(5), 2765–2771. https://doi.org/10.1063/1.1543633

Smith, T. P., Mecouch, W. J., Miraglia, P. Q., Roskowski, A. M., Hartlieb, P. J., & Davis, R. F. (2003). Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy. JOURNAL OF CRYSTAL GROWTH, 257(3-4), 255–262. https://doi.org/10.1016/S0022-0248(03)01469-6

Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., & Davis, R. F. (2003). Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures. JOURNAL OF CRYSTAL GROWTH, 253(1-4), 16–25. https://doi.org/10.1016/S0022-0248(03)00970-9

Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., Lim, S. H., Liliental-Weber, Z., & Davis, R. F. (2003). Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures. THIN SOLID FILMS, 437(1-2), 140–149. https://doi.org/10.1016/S0040-6090(03)00611-4

Schwarz, U. T., Schuck, P. J., Mason, M. D., Grober, R. D., Roskowski, A. M., Einfeldt, S., & Davis, R. F. (2003). Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC. Physical Review. B, Condensed Matter and Materials Physics, 67(4), 045321–045321.

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2003, March 15). Response to "Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]". JOURNAL OF APPLIED PHYSICS, Vol. 93, pp. 3679–3679. https://doi.org/10.1063/1.1542911

Hartlieb, P. J., Roskowski, A., Davis, R. F., & Nemanich, R. J. (2002). Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN. JOURNAL OF APPLIED PHYSICS, 91(11), 9151–9160. https://doi.org/10.1063/1.1471578

Schuck, P. J., Grober, R. D., Roskowski, A. M., Einfeldt, S., & Davis, R. F. (2002). Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence. APPLIED PHYSICS LETTERS, 81(11), 1984–1986. https://doi.org/10.1063/1.1506948

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002). Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence. IEEE JOURNAL OF QUANTUM ELECTRONICS, 38(8), 1006–1016. https://doi.org/10.1109/JQE.2002.801005

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002, May). Maskless pendeo-epitaxial growth of GaN films. JOURNAL OF ELECTRONIC MATERIALS, Vol. 31, pp. 421–428. https://doi.org/10.1007/s11664-002-0095-6

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2002). Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces. JOURNAL OF APPLIED PHYSICS, 91(2), 732–738. https://doi.org/10.1063/1.1424060

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., Schuck, J., Grober, R., & Davis, R. F. (2002). Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy. Opto-Electronics Review, 10(4), 261–270.

Einfeldt, S., Roskowski, A. M., Preble, E. A., & Davis, R. F. (2002). Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy. APPLIED PHYSICS LETTERS, 80(6), 953–955. https://doi.org/10.1063/1.1448145

Roskowski, A. M., Felder, R. M., & Bullard, L. (2002). Student Use (and Non-Use) of Instructional Technology. Journal of SMET Education: Innovations and Research, 2(2002), 41–45.

Roskowski, A. M., Miraglia, P. Q., Preble, E. A., Einfeldt, S., & Davis, R. F. (2002). Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE. JOURNAL OF CRYSTAL GROWTH, 241(1-2), 141–150. https://doi.org/10.1016/S0022-0248(02)00943-0

Roskowski, A. M., Felder, R. M., & Bullard, L. G. (2001). Instructional software: if you build It, they may or may not come. 2001 ASEE Annual Conference Proceedings, ASEE, June 2001. Washington, D.C.: American Society for Engineering Education.

Roskowski, A. M., Miraglia, P. Q., Preble, E. A., Einfeldt, S., Stiles, T., Davis, R. F., … Schwarz, U. (2001). Strain and dislocation reduction in maskless pendeo-epitaxy GaN thin films. Physica Status Solidi. A, Applications and Materials Science, 188(2), 729–732. https://doi.org/10.1002/1521-396x(200112)188:2<729::aid-pssa729>3.0.co;2-w