Edwin Allen Barry

Works (8)

Updated: July 5th, 2023 16:00

2010 journal article

First-principles analysis of electron-phonon interactions in graphene

Physical Review B, 81(12).

By: K. Borysenko n, J. Mullen n, E. Barry n, S. Paul n, Y. Semenov n, J. Zavada n, M. Nardelli n, K. Kim n 

Contributors: K. Borysenko n, J. Mullen n, E. Barry n, S. Paul n, Y. Semenov n, J. Zavada n, M. Nardelli n, K. Kim n 

topics (OpenAlex): Graphene research and applications; Thermal properties of materials; Carbon Nanotubes in Composites
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

2010 journal article

Large-Signal Analysis of Terahertz Generation in Submicrometer GaN Diodes

IEEE Sensors Journal, 10(3), 765–771.

By: E. Barry n, K. Kim n , R. Trew n, V. Sokolov n & V. Sokolov

Contributors: E. Barry n, K. Kim n , R. Trew n, V. Sokolov n & V. Sokolov

author keywords: Harmonic power and efficiency analysis; negative differential mobility; resonant circuit; submicrometer GaN diode; terahertz oscillator
topics (OpenAlex): Terahertz technology and applications; GaN-based semiconductor devices and materials; Superconducting and THz Device Technology
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UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

2010 journal article

Surface polar phonon dominated electron transport in graphene

Applied Physics Letters, 97(23), 232105.

By: X. Li n, E. Barry*, J. Zavada n, M. Buongiorno Nardelli n & K. Kim n 

Contributors: X. Li n, E. Barry*, J. Zavada n, M. Nardelli n & K. Kim n 

topics (OpenAlex): Graphene research and applications; Carbon Nanotubes in Composites; Thermal properties of materials; Advanced Physical and Chemical Molecular Interactions
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

2009 journal article

Terahertz generation in GaN diodes operating in pulsed regime limited by self-heating

Applied Physics Letters, 94(22), 222106.

By: E. Barry n, V. Sokolov n, K. Kim n  & R. Trew n

Contributors: E. Barry n, V. Sokolov n, K. Kim n  & R. Trew n

author keywords: gallium compounds; high field effects; III-V semiconductors; semiconductor diodes; terahertz wave generation
topics (OpenAlex): GaN-based semiconductor devices and materials; Terahertz technology and applications; Semiconductor Quantum Structures and Devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

2008 journal article

Terahertz generation in GaN diodes in the limited space-charge accumulation mode

Journal of Applied Physics, 103(12), 126101.

By: E. Barry n, V. Sokolov n, K. Kim n  & R. Trew n

Contributors: E. Barry n, V. Sokolov n, K. Kim n  & R. Trew n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Superconducting and THz Device Technology
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

2003 journal article

Electron spin relaxation under drift in GaAs

Applied Physics Letters, 82(21), 3686–3688.

By: E. Barry n, A. Kiselev n & K. Kim n 

Contributors: E. Barry n, A. Kiselev n & K. Kim n 

topics (OpenAlex): Quantum and electron transport phenomena; Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

2002 journal article

Hot electrons in group-III nitrides at moderate electric fields

Applied Physics Letters, 80(13), 2317–2319.

By: E. Barry n, K. Kim n  & V. Kochelap *

Contributors: E. Barry n, K. Kim n  & V. Kochelap *

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Semiconductor materials and devices
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

2001 article

Group-III Nitrides Hot Electron Effects in Moderate Electric Fields

Barry, E. A., Kim, K. W., & Kochelap, V. A. (2001, November 1). Physica Status Solidi (b), Vol. 228, pp. 571–574.

By: E. Barry n, K. Kim n  & V. Kochelap *

Contributors: E. Barry n, K. Kim n  & V. Kochelap *

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Advancements in Semiconductor Devices and Circuit Design
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

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