@article{raghuveer_yoganand_jagannadham_lemaster_bailey_2002, title={Improved CVD diamond coatings on WC-Co tool substrates}, volume={253}, ISSN={["0043-1648"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0036951335&partnerID=MN8TOARS}, DOI={10.1016/S0043-1648(02)00244-2}, abstractNote={Tungsten carbide tools with different cobalt concentrations (3 and 6%) have been treated with different surface cleaning procedures for deposition of diamond and multilayer diamond composite films. Cleaning with organic solvents, surface etching to remove cobalt from the surface, and hydrogen plasma etching to decarburize WC and etch remove cobalt have been used in combination to improve the adhesion of diamond films deposited on the tool substrates. Diamond layers are deposited by microwave plasma chemical vapor deposition (MPCVD) after introducing surface nucleation by suspension with sub-micron size diamond crystallites. TiN and TiC films are deposited as intermediate layers that prevent diffusion of cobalt or as embedding layers that also anchor diamond crystallites to the tool substrate. A continuous top layer of diamond was deposited for different periods of time (15–36 h) to obtain diamond film thickness ranging from 15 to 36 μm. The performance of diamond-coated tools has been tested by machining particleboard. The tool surfaces were characterized using measurements of wear of the cutting edge. Microstructural characterization using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) of the composite layers on the tool surfaces is performed. The quantitative evaluation of wear and microstructural characterization were used to determine the mechanisms of wear of the cutting edge. The results are used to conclude the diamond tool coating procedure that provides the best performance in machining particleboard.}, number={11-12}, journal={WEAR}, author={Raghuveer, MS and Yoganand, SN and Jagannadham, K and Lemaster, RL and Bailey, J}, year={2002}, month={Dec}, pages={1194–1206} }
 @article{yoganand_jagannadham_karoui_wang_2002, title={Integrated AlN/diamond heat spreaders for silicon device processing}, volume={20}, ISSN={["0734-2101"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0036863138&partnerID=MN8TOARS}, DOI={10.1116/1.1513643}, abstractNote={Growth and characterization of AlN and diamond films on the backside of a Si (100) wafer and the integration of AlN/diamond heat spreaders into silicon device technology is investigated. AlN film was deposited by pulsed dc reactive magnetron sputtering at 600 °C and diamond film was deposited by microwave plasma chemical vapor deposition at 900 °C. The films were characterized by x-ray diffraction and transmission electron microscopy for crystalline quality, by scanning electron microscopy for morphology, and by infrared thermography for heat spreading characteristics. The heat spreading characteristics of the silicon wafer with the composite AlN/diamond films were found to be superior to that of wafers with no heat spreaders or to the wafers with either single layer diamond or single layer AlN heat spreaders. Deep level transient spectroscopy and secondary ion mass spectroscopy were performed on the samples with and without the heat spreader to determine the concentration of the impurities that may have ...}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS}, author={Yoganand, SN and Jagannadham, K and Karoui, A and Wang, H}, year={2002}, pages={1974–1982} }
 @article{yoganand_raghuveer_jagannadham_wu_karoui_rozgonyi_2002, title={Multilayer TiC/TiN diffusion barrier films for copper}, volume={80}, ISSN={["1077-3118"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-79955988332&partnerID=MN8TOARS}, DOI={10.1063/1.1430027}, abstractNote={TiC/TiN thin films deposited by reactive magnetron sputtering on Si (100) substrates were investigated by transmission electron microscopy for microstructure and by deep level transient spectroscopy (DLTS) for diffusion barrier against copper. TiN thin films deposited on Si substrates at a substrate temperature of 600 °C were textured, and TiC thin films deposited at the same temperature were polycrystalline. TiC/TiN multilayer films also showed the same characteristics with the formation of an additional interaction layer. The diffusion barrier characteristics of the TiC/TiN/Si were determined by DLTS and the results showed that the films completely prevented diffusion of copper into Si.}, number={1}, journal={APPLIED PHYSICS LETTERS}, author={Yoganand, SN and Raghuveer, MS and Jagannadham, K and Wu, L and Karoui, A and Rozgonyi, G}, year={2002}, month={Jan}, pages={79–81} }