Faouzia Sahtout Karoui

Karoui, F. S., & Karoui, A. (2010). A density functional theory study of the atomic structure, formation energy, and vibrational properties of nitrogen-vacancy-oxygen defects in silicon. JOURNAL OF APPLIED PHYSICS, 108(3). https://doi.org/10.1063/1.3387912

Karoui, F. S., Karoui, A., Rozgonyi, G. A., Hourai, M., & Sueoka, K. (2004). Characterization of nucleation sites in nitrogen doped czochralski silicon by density functional theory and molecular mechanics. Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96(2004), 99–104. https://doi.org/10.4028/www.scientific.net/ssp.95-96.99

Karoui, A., Karoui, F. S., Rozgonyi, G. A., & Yang, D. (2004). Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects. JOURNAL OF APPLIED PHYSICS, 96(6), 3255–3263. https://doi.org/10.1063/1.1773921

Karoui, A., Karoui, F. S., Rozgonyi, G. A., Hourai, M., & Sueoka, K. (2003). Structure, energetics, and thermal stability of nitrogen-vacancy-related defects in nitrogen doped silicon. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(12), G771–G777. https://doi.org/10.1149/1.1621418