@article{dalmau_moody_xie_collazo_sitar_2011, title={Characterization of dislocation arrays in AlN single crystals grown by PVT}, volume={208}, ISSN={1862-6300}, url={http://dx.doi.org/10.1002/pssa.201000957}, DOI={10.1002/pssa.201000957}, abstractNote={Abstract}, number={7}, journal={physica status solidi (a)}, publisher={Wiley}, author={Dalmau, Rafael and Moody, Baxter and Xie, Jinqiao and Collazo, Ramón and Sitar, Zlatko}, year={2011}, month={May}, pages={1545–1547} }
 @article{zachek_takmakov_moody_wightman_mccarty_2009, title={Simultaneous Decoupled Detection of Dopamine and Oxygen Using Pyrolyzed Carbon Microarrays and Fast-Scan Cyclic Voltammetry}, volume={81}, ISSN={["1520-6882"]}, DOI={10.1021/ac900790m}, abstractNote={Microfabricated structures utilizing pyrolyzed photoresist have been shown to be useful for monitoring electrochemical processes. These previous studies, however, were limited to constant-potential measurements and slow-scan voltammetry. The work described in this paper utilizes microfabrication processes to produce devices that enable multiple fast-scan cyclic voltammetry (FSCV) waveforms to be applied to different electrodes on a single substrate. This enabled the simultaneous, decoupled detection of dopamine and oxygen. In this paper we describe the fabrication process of these arrays and show that pyrolyzed photoresist electrodes possess surface chemistry and electrochemical properties comparable to PAN-type, T-650, carbon fiber microelectrodes using background-subtracted FSCV. The functionality of the array is discussed in terms of the degree of cross talk in response to flow injections of physiologically relevant concentrations of dopamine and oxygen. Finally, other applications of pyrolyzed photoresist microelectrode arrays are shown, including spatially resolved detection of analytes and combining FSCV with amperometry for the detection of dopamine.}, number={15}, journal={ANALYTICAL CHEMISTRY}, author={Zachek, Matthew K. and Takmakov, Pavel and Moody, Benjamin and Wightman, R. Mark and McCarty, Gregory S.}, year={2009}, month={Aug}, pages={6258–6265} }
 @article{moody_mccarty_2009, title={Statistically Significant Raman Detection of Midsequence Single Nucleotide Polymorphisms}, volume={81}, ISSN={["1520-6882"]}, DOI={10.1021/ac802247y}, abstractNote={This report highlights methodologies that enable statistically significant data to be collected for single nucleotide polymorphisms using surface enhanced Raman spectroscopy. Single-stranded oligonucleotides functionalized with 40 nm gold nanoparticles are hybridized with oligonucleotides adsorbed to a photolithographically defined gold surface thus creating a surface enhanced Raman environment around the DNA duplex. With this design characteristic Raman spectra have been collected and explored for differences between DNA duplexes formed from complementary oligonucleotides, completely mismatched oligonucleotides, and those formed from oligonucleotides that have a midsequence single nucleotide mismatch. The results show that statistically significant differences in Raman intensity for characteristic peaks can be collected for the three cases.}, number={5}, journal={ANALYTICAL CHEMISTRY}, author={Moody, Benjamin and McCarty, Gregory}, year={2009}, month={Mar}, pages={2013–2016} }
 @article{barletta_berkman_moody_el-masry_emara_reed_bedair_2007, title={Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures}, volume={90}, ISSN={["0003-6951"]}, DOI={10.1063/1.2721133}, abstractNote={The authors present optical and electrical data for long wavelength (573–601nm) InGaN∕GaN multiple quantum well light emitting diodes (LEDs) grown by metal organic chemical vapor deposition. These results are achieved by optimizing the active layer growth temperature and the quantum well width. Also, the p-GaN is grown at low temperature to avoid the disintegration of the InGaN quantum wells with high InN content. A redshift is observed for both the green and yellow LEDs upon decreasing the injection current at low current regime. In the case of the yellow LED, this shift is enough to push emission into the amber (601nm).}, number={15}, journal={APPLIED PHYSICS LETTERS}, author={Barletta, Philip T. and Berkman, E. Acar and Moody, Baxter F. and El-Masry, Nadia A. and Emara, Ahmed M. and Reed, Mason J. and Bedair, S. M.}, year={2007}, month={Apr} }
 @article{moody_barletta_el-masry_roberts_aumer_leboeuf_bedair_2002, title={Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08)}, volume={80}, ISSN={["0003-6951"]}, DOI={10.1063/1.1464225}, abstractNote={The effect of hydrogen on the incorporation of nitrogen in GaAs1−yNy grown by metalorganic chemical vapor deposition (MOCVD) is reported. Nitrogen content as high as y=0.081 has been achieved when the use of H2 is completely avoided in the MOCVD growth of GaAs1−yNy. When H2 is added to the growth ambient, the value of y in GaAs1−yNy decreases as the relative percent of H2 in the carrier gas increases. We will report on the properties of these GaAsN films and discuss the nature of the effect that H2 has on modulating the N content in these films.}, number={14}, journal={APPLIED PHYSICS LETTERS}, author={Moody, BF and Barletta, PT and El-Masry, NA and Roberts, JC and Aumer, ME and LeBoeuf, SF and Bedair, SM}, year={2002}, month={Apr}, pages={2475–2477} }
 @article{aumer_leboeuf_moody_bedair_nam_lin_jiang_2002, title={Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures}, volume={80}, ISSN={["0003-6951"]}, DOI={10.1063/1.1469219}, abstractNote={The recombination dynamics of optical transitions as well as strain effects in AlInGaN/In0.08Ga0.92N quantum wells (QWs) were studied. QW emission energy, photoluminescence decay behavior, photoluminescence emission line shape, and nonradiative recombination behavior were found to be strong functions of strain as well as localization. The degree of carrier localization was inferred by modeling several aspects of optical behavior obtained from variable temperature time-resolved photoluminescence experiments. According to the modeling results, the degree of localization was found to be a minimum for unstrained QWs and increased as either tensile or compressive strain increased, indicating that InGaN QW microstructure is a function of the lattice-mismatch-induced strain experienced during deposition.}, number={17}, journal={APPLIED PHYSICS LETTERS}, author={Aumer, ME and LeBoeuf, SF and Moody, BF and Bedair, SM and Nam, K and Lin, JY and Jiang, HX}, year={2002}, month={Apr}, pages={3099–3101} }