@article{porter_cai_muth_narayan_2005, title={Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium}, volume={86}, number={21}, journal={Applied Physics Letters}, author={Porter, H. L. and Cai, A. L. and Muth, J. F. and Narayan, J.}, year={2005} }
 @article{muth_zhang_cai_fothergill_roberts_rajagopal_cook_piner_linthicum_2005, title={Gallium nitride surface quantum wells}, volume={87}, number={19}, journal={Applied Physics Letters}, author={Muth, J. F. and Zhang, X. and Cai, A. and Fothergill, D. and Roberts, J. C. and Rajagopal, P. and Cook, J. W. and Piner, E. L. and Linthicum, K. J.}, year={2005} }
 @article{porter_mion_cai_zhang_muth_2005, title={Growth of ZnO films on C-plane (0001) sapphire by pulsed electron deposition (PED)}, volume={119}, ISSN={["0921-5107"]}, DOI={10.1016/j.mseb.2005.02.042}, abstractNote={Thin films of ZnO on C-plane (0 0 0 1) sapphire (α-Al2O3) substrates were grown by pulsed electron beam deposition (PED). Intense electron pulses, approximately 0.8 J/70 ns pulse produced by a channelspark pulsed electron source at a rate of 10 Hz were used to ablate sintered polycrystalline ZnO targets at an oxygen pressure of 15 mTorr. During growth, the sapphire substrate temperature was maintained at 700 °C. A 15 min growth produced a 250 nm film, as measured by a Dektak profilometer. Measurements by X-ray diffraction indicate c-axis oriented films. Cathodoluminescence (CL) data show strong band edge emission. Optical absorption data indicate a sharp band edge with clearly visible exciton absorption at room temperature, and resolved A and B excitons at 77 K. Thus, pulsed electron beam deposition of ZnO films is shown to be a viable technique for producing high quality ZnO films.}, number={2}, journal={MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY}, author={Porter, HL and Mion, C and Cai, AL and Zhang, X and Muth, JF}, year={2005}, month={May}, pages={210–212} }
 @article{cook_everitt_avrutsky_osinsky_cai_muth_2005, title={Refractive indices of ZnSiN2 on r-plane sapphire}, volume={86}, number={12}, journal={Applied Physics Letters}, author={Cook, B. P. and Everitt, H. O. and Avrutsky, I. and Osinsky, A. and Cai, A. and Muth, J. F.}, year={2005} }
 @article{cai_zhang_hua_zhang_2002, title={Direct formation of self-assembled nanoporous aluminium oxide on SiO2 and Si substrates}, volume={13}, ISSN={["1361-6528"]}, DOI={10.1088/0957-4484/13/5/317}, abstractNote={An unconventional self-assembly process was integrated with traditional silicon microfabrication technologies to directly form hexagonally ordered nanoporous patterns on both SiO2 and Si surfaces. Starting with an aluminium thin film deposited on a SiO2 or Si substrate, an Al anodization process was employed to generate highly uniform nanoporous anodic aluminium oxide thin films with average pore diameters of 30–70 nm directly on SiO2 and Si surfaces. The long-range order of the anodic aluminium oxide nanoporous structures was improved by thermally annealing the starting Al films to promote the grain size growth and by utilizing a multiple anodization process to enhance their uniformity. The formation of the hexagonally ordered nanoporous array may be attributed to the interplay between the topological requirement for space filling of pores and the kinetics of domain growth with time under a constant anodization voltage. These results demonstrate the feasibility of integrating self-assembled anodic aluminium oxide nanostructures with Si microfabrication technologies in the pursuit of future-generation Si nanoelectronic devices.}, number={5}, journal={NANOTECHNOLOGY}, author={Cai, AL and Zhang, HY and Hua, H and Zhang, ZB}, year={2002}, month={Oct}, pages={627–630} }
 @article{chang_cai_johnson_muth_kolbas_reitmeier_einfeldt_davis_2002, title={Electron-beam-induced optical memory effects in GaN}, volume={80}, ISSN={["0003-6951"]}, DOI={10.1063/1.1469222}, abstractNote={Metastable effects in unintentionally doped GaN films grown on SiC substrates have been investigated using cathodoluminescence (CL). Memory effect patterns produced optically are observed in CL images. An electron beam can also produce memory effect patterns and the resulting changes in the luminescence spectra are quite similar for either optical or electron-beam-induced patterns. CL spectra reveal that the yellow luminescence at 2.2 eV increases significantly with little change in the band-edge emission in both cases. Samples that do not exhibit optically induced memory effects are also investigated and do not exhibit electron-beam-induced patterns, either. Monochromatic CL images at 540 and 365 nm confirm the similarity of optically and electron-beam-induced memory effects based on changes in luminescence spectra.}, number={15}, journal={APPLIED PHYSICS LETTERS}, author={Chang, YC and Cai, AL and Johnson, MAL and Muth, JF and Kolbas, RM and Reitmeier, ZJ and Einfeldt, S and Davis, RF}, year={2002}, month={Apr}, pages={2675–2677} }