@article{reitmeier_einfeldt_davis_zhang_fang_mahajan_2010, title={Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates}, volume={58}, number={6}, journal={Acta Materialia}, author={Reitmeier, Z. J. and Einfeldt, S. and Davis, R. F. and Zhang, X. Y. and Fang, X. L. and Mahajan, S.}, year={2010}, pages={2165–2175} }
 @article{reitmeier_einfeldt_davis_zhang_fang_mahajan_2009, title={Sequential growths of AlN and GaN layers on as-polished 6H-SiC(0001) substrates}, volume={57}, ISSN={["1873-2453"]}, DOI={10.1016/j.actamat.2009.04.026}, number={14}, journal={ACTA MATERIALIA}, author={Reitmeier, Z. J. and Einfeldt, S. and Davis, R. F. and Zhang, Xinyu and Fang, Xialong and Mahajan, S.}, year={2009}, month={Aug}, pages={4001–4008} }
 @article{bishop_park_gu_wagner_reltmeier_batchelor_zakharov_liliental-weber_davis_2007, title={Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0)}, volume={300}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2006.10.207}, number={1}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Bishop, S. M. and Park, J. -S. and Gu, J. and Wagner, B. P. and Reltmeier, Z. J. and Batchelor, D. A. and Zakharov, D. N. and Liliental-Weber, Z. and Davis, R. F.}, year={2007}, month={Mar}, pages={83–89} }
 @article{chang_kolbas_reitmeier_davis_2006, title={Effect of thermal annealing on the metastable optical properties of GaN thin films}, volume={24}, ISSN={["0734-2101"]}, DOI={10.1116/1.2209656}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Chang, Y. C. and Kolbas, R. M. and Reitmeier, Z. J. and Davis, R. F.}, year={2006}, pages={1051–1054} }
 @article{wagner_reitmeier_park_bachelor_zakharov_liliental-weber_davis_2006, title={Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates}, volume={290}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2006.02.011}, number={2}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Wagner, BP and Reitmeier, ZJ and Park, JS and Bachelor, D and Zakharov, DN and Liliental-Weber, Z and Davis, RF}, year={2006}, month={May}, pages={504–512} }
 @article{park_reitmeier_fothergill_zhang_muth_davis_2006, title={Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0001) substrates and the effect of carrier-blocking layers on their emission characteristics}, volume={127}, ISSN={["0921-5107"]}, DOI={10.1016/j.mseb.2005.10.019}, number={2-3}, journal={MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY}, author={Park, JS and Reitmeier, ZJ and Fothergill, D and Zhang, XY and Muth, JF and Davis, RF}, year={2006}, month={Feb}, pages={169–179} }
 @article{lee_lee_hwang_reitmeier_davis_rogers_nuzzo_2005, title={A  printable form of single-crystalline gallium nitride for flexible optoelectronic systems}, volume={1}, number={12}, journal={Small (Weinheim An Der Bergstrasse, Germany)}, author={Lee, K. J. and Lee, J. and Hwang, H. D. and Reitmeier, Z. J. and Davis, R. F. and Rogers, J. A. and Nuzzo, R. G.}, year={2005}, pages={1164–1168} }
 @article{park_fothergill_zhang_reitmeier_muth_davis_2005, title={Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes}, volume={44}, ISSN={["0021-4922"]}, DOI={10.1143/jjap.44.7254}, number={10}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS}, author={Park, JS and Fothergill, DW and Zhang, XY and Reitmeier, ZJ and Muth, JF and Davis, RF}, year={2005}, month={Oct}, pages={7254–7259} }
 @article{kroger_einfeldt_chierchia_hommel_reitmeier_davis_liu_2005, title={On the microstructure of AlxGa1-xN layers grown on 6H-SiC(0001) substrates}, volume={97}, number={8}, journal={Journal of Applied Physics}, author={Kroger, R. and Einfeldt, S. and Chierchia, R. and Hommel, D. and Reitmeier, Z. J. and Davis, R. F. and Liu, Q. K. K.}, year={2005} }
 @article{mecouch_wagner_reitmeier_davis_pandarinath_rodriguez_nemanich_2005, title={Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001)}, volume={23}, ISSN={["0734-2101"]}, DOI={10.1116/1.1830497}, number={1}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Mecouch, WJ and Wagner, BP and Reitmeier, ZJ and Davis, RF and Pandarinath, C and Rodriguez, BJ and Nemanich, RJ}, year={2005}, pages={72–77} }
 @article{zakharov_liliental-weber_wagner_reitmeier_preble_davis_2005, title={Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy}, volume={71}, number={23}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Zakharov, D. N. and Liliental-Weber, Z. and Wagner, B. and Reitmeier, Z. J. and Preble, E. A. and Davis, R. F.}, year={2005} }
 @inbook{bishop_preble_hallin_henry_storasta_jacobson_wagner_reitmeier_janzen_davis_2004, title={Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization}, volume={457-460}, booktitle={Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003}, publisher={Utikon-Zurich, Switzerland: Trans Tech Publications}, author={Bishop, S. M. and Preble, E. A. and Hallin, C. and Henry, A. and Storasta, L. and Jacobson, H. and Wagner, B. P. and Reitmeier, Z. and Janzen, E. and Davis, R. F.}, editor={R. Madar, J. Camassel and Blanquet, E.Editors}, year={2004}, pages={221–224} }
 @article{reitmeier_park_mecouch_davis_2004, title={In situ cleaning of GaN(0001) surfaces in a metalorganic vapor phase epitaxy environment}, volume={22}, number={5}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Reitmeier, Z. J. and Park, J. S. and Mecouch, W. J. and Davis, R. F.}, year={2004}, pages={2077–2082} }
 @article{hartman_roskowski_reitmeier_tracy_davis_nemanich_2003, title={Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AlN films}, volume={21}, ISSN={["0734-2101"]}, DOI={10.1116/1.1539080}, number={2}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Hartman, JD and Roskowski, AM and Reitmeier, ZJ and Tracy, KM and Davis, RF and Nemanich, RJ}, year={2003}, pages={394–400} }
 @article{davis_einfeldt_preble_roskowski_reitmeier_miraglia_2003, title={Gallium nitride and related materials: challenges in materials processing}, volume={51}, ISSN={["1873-2453"]}, DOI={10.1016/j.actamat.2003.08.005}, number={19}, journal={ACTA MATERIALIA}, author={Davis, RF and Einfeldt, S and Preble, EA and Roskowski, AM and Reitmeier, ZJ and Miraglia, PQ}, year={2003}, month={Nov}, pages={5961–5979} }
 @article{einfeldt_reitmeier_davis_2003, title={Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers}, volume={253}, ISSN={["0022-0248"]}, DOI={10.1016/S0022-0248(03)01039-X}, number={1-4}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Einfeldt, S and Reitmeier, ZJ and Davis, RF}, year={2003}, month={Jun}, pages={129–141} }
 @article{chang_cai_johnson_muth_kolbas_reitmeier_einfeldt_davis_2002, title={Electron-beam-induced optical memory effects in GaN}, volume={80}, ISSN={["0003-6951"]}, DOI={10.1063/1.1469222}, number={15}, journal={APPLIED PHYSICS LETTERS}, author={Chang, YC and Cai, AL and Johnson, MAL and Muth, JF and Kolbas, RM and Reitmeier, ZJ and Einfeldt, S and Davis, RF}, year={2002}, month={Apr}, pages={2675–2677} }