Zachary J. Reitmeier

Reitmeier, Z. J., Einfeldt, S., Davis, R. F., Zhang, X. Y., Fang, X. L., & Mahajan, S. (2010). Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates. Acta Materialia, 58(6), 2165–2175.

Reitmeier, Z. J., Einfeldt, S., Davis, R. F., Zhang, X., Fang, X., & Mahajan, S. (2009). Sequential growths of AlN and GaN layers on as-polished 6H-SiC(0001) substrates. ACTA MATERIALIA, 57(14), 4001–4008. https://doi.org/10.1016/j.actamat.2009.04.026

Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reltmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, March 1). Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0). JOURNAL OF CRYSTAL GROWTH, Vol. 300, pp. 83–89. https://doi.org/10.1016/j.jcrysgro.2006.10.207

Chang, Y. C., Kolbas, R. M., Reitmeier, Z. J., & Davis, R. F. (2006). Effect of thermal annealing on the metastable optical properties of GaN thin films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 24(4), 1051–1054. https://doi.org/10.1116/1.2209656

Wagner, B. P., Reitmeier, Z. J., Park, J. S., Bachelor, D., Zakharov, D. N., Liliental-Weber, Z., & Davis, R. F. (2006). Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates. JOURNAL OF CRYSTAL GROWTH, 290(2), 504–512. https://doi.org/10.1016/j.jcrysgro.2006.02.011

Park, J. S., Reitmeier, Z. J., Fothergill, D., Zhang, X. Y., Muth, J. F., & Davis, R. F. (2006). Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0001) substrates and the effect of carrier-blocking layers on their emission characteristics. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 127(2-3), 169–179. https://doi.org/10.1016/j.mseb.2005.10.019

Lee, K. J., Lee, J., Hwang, H. D., Reitmeier, Z. J., Davis, R. F., Rogers, J. A., & Nuzzo, R. G. (2005). A  printable form of single-crystalline gallium nitride for flexible optoelectronic systems. Small (Weinheim An Der Bergstrasse, Germany), 1(12), 1164–1168.

Park, J. S., Fothergill, D. W., Zhang, X. Y., Reitmeier, Z. J., Muth, J. F., & Davis, R. F. (2005). Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(10), 7254–7259. https://doi.org/10.1143/jjap.44.7254

Kroger, R., Einfeldt, S., Chierchia, R., Hommel, D., Reitmeier, Z. J., Davis, R. F., & Liu, Q. K. K. (2005). On the microstructure of AlxGa1-xN layers grown on 6H-SiC(0001) substrates. Journal of Applied Physics, 97(8).

Mecouch, W. J., Wagner, B. P., Reitmeier, Z. J., Davis, R. F., Pandarinath, C., Rodriguez, B. J., & Nemanich, R. J. (2005). Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001). JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23(1), 72–77. https://doi.org/10.1116/1.1830497

Zakharov, D. N., Liliental-Weber, Z., Wagner, B., Reitmeier, Z. J., Preble, E. A., & Davis, R. F. (2005). Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy. Physical Review. B, Condensed Matter and Materials Physics, 71(23).

Bishop, S. M., Preble, E. A., Hallin, C., Henry, A., Storasta, L., Jacobson, H., … Davis, R. F. (2004). Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization. In J. C. R. Madar & E. Blanquet (Eds.), Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 (Vol. 457-460, pp. 221–224). Utikon-Zurich, Switzerland: Trans Tech Publications.

Reitmeier, Z. J., Park, J. S., Mecouch, W. J., & Davis, R. F. (2004). In situ cleaning of GaN(0001) surfaces in a metalorganic vapor phase epitaxy environment. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(5), 2077–2082.

Hartman, J. D., Roskowski, A. M., Reitmeier, Z. J., Tracy, K. M., Davis, R. F., & Nemanich, R. J. (2003). Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AlN films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(2), 394–400. https://doi.org/10.1116/1.1539080

Davis, R. F., Einfeldt, S., Preble, E. A., Roskowski, A. M., Reitmeier, Z. J., & Miraglia, P. Q. (2003). Gallium nitride and related materials: challenges in materials processing. ACTA MATERIALIA, 51(19), 5961–5979. https://doi.org/10.1016/j.actamat.2003.08.005

Einfeldt, S., Reitmeier, Z. J., & Davis, R. F. (2003). Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers. JOURNAL OF CRYSTAL GROWTH, 253(1-4), 129–141. https://doi.org/10.1016/S0022-0248(03)01039-X

Chang, Y. C., Cai, A. L., Johnson, M. A. L., Muth, J. F., Kolbas, R. M., Reitmeier, Z. J., … Davis, R. F. (2002). Electron-beam-induced optical memory effects in GaN. APPLIED PHYSICS LETTERS, 80(15), 2675–2677. https://doi.org/10.1063/1.1469222