Sven Einfeldt

Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates

Acta Materialia, 58(6), 2165–2175.

Sequential growths of AlN and GaN layers on as-polished 6H–SiC(0001) substrates

Reitmeier, Z. J., Einfeldt, S., Davis, R. F., Zhang, X., Fang, X., & Mahajan, S. (2009, June 26). Acta Materialia.

Characterization of growth defects in thin GaN layers with X‐ray microbeam

Barabash, R. I., Ice, G. E., Roder, C., Budai, J., Liu, W., Figge, S., … Davis, R. F. (2007, April 2). Physica Status Solidi (b).

Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

Tracy, K. M., Hartlieb, P. J., Einfeldt, S., Davis, R. F., Hurt, E. H., & Nemanich, R. J. (2003, September 15). Journal of Applied Physics.

Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures

Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., & Davis, R. F. (2003, May 13). Journal of Crystal Growth.

Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures

Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., Lim, S. H., Liliental-Weber, Z., & Davis, R. F. (2003, June 21). Thin Solid Films.

Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC

Physical Review. B, Condensed Matter and Materials Physics, 67(4), 045321–045321.

Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers

Einfeldt, S., Reitmeier, Z. J., & Davis, R. F. (2003, May 13). Journal of Crystal Growth.

Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence

Schuck, P. J., Grober, R. D., Roskowski, A. M., Einfeldt, S., & Davis, R. F. (2002, September 9). Applied Physics Letters.

Electron-beam-induced optical memory effects in GaN

Chang, Y. C., Cai, A. L., Johnson, M. A. L., Muth, J. F., Kolbas, R. M., Reitmeier, Z. J., … Davis, R. F. (2002, April 15). Applied Physics Letters.

Infrared spectroscopic ellipsometry—a new tool for characterization of semiconductor heterostructures

Kasic, A., Schubert, M., Einfeldt, S., & Hommel, D. (2002, July 1). Vibrational Spectroscopy.

Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002, August 1). IEEE Journal of Quantum Electronics.

Maskless pendeo-epitaxial growth of GaN films

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002, May 1). Journal of Electronic Materials.

Optical phonons in hexagonal AlxInyGa1-x-yN (y approximate to 0.12)

Physica Status Solidi. B, Basic Solid State Physics, 234(3), 970–974.

Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy

Opto-Electronics Review, 10(4), 261–270.

Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE

Roskowski, A. M., Miraglia, P. Q., Preble, E. A., Einfeldt, S., & Davis, R. F. (2002, May 1). Journal of Crystal Growth.