@article{niu_ashcraft_hinkle_parsons_2004, title={Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics}, volume={22}, ISSN={["1520-8559"]}, DOI={10.1116/1.1666880}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Niu, D and Ashcraft, RW and Hinkle, C and Parsons, GN}, year={2004}, pages={445–451} }
 @article{gougousi_niu_ashcraft_parsons_2003, title={Carbonate formation during post-deposition ambient exposure of high-k dielectrics}, volume={83}, ISSN={["0003-6951"]}, DOI={10.1063/1.1623316}, number={17}, journal={APPLIED PHYSICS LETTERS}, author={Gougousi, T and Niu, D and Ashcraft, RW and Parsons, GN}, year={2003}, month={Oct}, pages={3543–3545} }
 @article{niu_ashcraft_chen_stemmer_parsons_2003, title={Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon}, volume={150}, ISSN={["1945-7111"]}, DOI={10.1149/1.1566415}, number={5}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Niu, D and Ashcraft, RW and Chen, Z and Stemmer, S and Parsons, GN}, year={2003}, month={May}, pages={F102–F109} }
 @article{niu_ashcraft_chen_stemmer_parsons_2002, title={Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon}, volume={81}, ISSN={["1077-3118"]}, DOI={10.1063/1.1496138}, number={4}, journal={APPLIED PHYSICS LETTERS}, author={Niu, D and Ashcraft, RW and Chen, Z and Stemmer, S and Parsons, GN}, year={2002}, month={Jul}, pages={676–678} }
 @article{niu_ashcraft_kelly_chambers_klein_parsons_2002, title={Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications}, volume={91}, ISSN={["0021-8979"]}, DOI={10.1063/1.1468253}, number={9}, journal={JOURNAL OF APPLIED PHYSICS}, author={Niu, D and Ashcraft, RW and Kelly, MJ and Chambers, JJ and Klein, TM and Parsons, GN}, year={2002}, month={May}, pages={6173–6180} }
 @article{stemmer_klenov_chen_niu_ashcraft_parsons_2002, title={Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers}, volume={81}, ISSN={["1077-3118"]}, DOI={10.1063/1.1496500}, number={4}, journal={APPLIED PHYSICS LETTERS}, author={Stemmer, S and Klenov, DO and Chen, ZQ and Niu, D and Ashcraft, RW and Parsons, GN}, year={2002}, month={Jul}, pages={712–714} }
 @article{niu_ashcraft_parsons_2002, title={Water absorption and interface reactivity of yttrium oxide gate dielectrics on silicon}, volume={80}, ISSN={["0003-6951"]}, DOI={10.1063/1.1477268}, number={19}, journal={APPLIED PHYSICS LETTERS}, author={Niu, D and Ashcraft, RW and Parsons, GN}, year={2002}, month={May}, pages={3575–3577} }