Works (16)
2013 article
Semi-Batch Deoxygenation of Canola- and Lard-Derived Fatty Acids to Diesel-Range Hydrocarbons
Ford, J. P., Thapaliya, N., Kelly, M. J., Roberts, W. L., & Lamb, H. H. (2013, November 14). Energy & Fuels.
2011 article
Dynamic modelling of whey protein–saliva interactions in the mouth and relation to astringency in acidic beverages
Andrewes, P., Kelly, M., Vardhanabhuti, B., & Foegeding, E. A. (2011, April 14). International Dairy Journal.
2008 article
Characterization of Palladium (Pd) on Alumina Catalysts Prepared Using Liquid Carbon Dioxide
Kim, J., Kelly, M. J., Lamb, H. H., Roberts, G. W., & Kiserow, D. J. (2008, June 21). The Journal of Physical Chemistry C.
2008 article
Characterization of Pd/γ-Al2O3 Catalysts Prepared Using [Pd(hfac)2] in Liquid CO2
Kelly, M. J., Kim, J., Roberts, G. W., & Lamb, H. H. (2008, May 23). Topics in Catalysis.
2005 article
In-Situ Infrared Spectroscopy and Density Functional Theory Modeling of Hafnium Alkylamine Adsorption on Si−OH and Si−H Surfaces
Kelly, M. J., Han, J. H., Musgrave, C. B., & Parsons, G. N. (2005, September 28). Chemistry of Materials, Vol. 17, pp. 5305–5314.
Contributors: n, J. Han n, C. Musgrave n & G. Parsons n
2003 patent
High dielectric constant metal silicates formed by controlled metal-surface reactions
Washington, DC: U.S. Patent and Trademark Office.
2003 article
Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon
Gougousi, T., Kelly, M. J., Terry, D. B., & Parsons, G. N. (2003, February 1). Journal of Applied Physics, Vol. 93, pp. 1691–1696.
Contributors: T. Gougousi n, n, D. Terry n & G. Parsons n
2003 patent
Silicon-on-insulator (SOI) semiconductor structure with additional trench including a conductive layer
Washington, DC: U.S. Patent and Trademark Office.
2002 article
Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications
Niu, D., Ashcraft, R. W., Kelly, M. J., Chambers, J. J., Klein, T. M., & Parsons, G. N. (2002, May 1). Journal of Applied Physics, Vol. 91, pp. 6173–6180.
Contributors: D. Niu n, R. Ashcraft n, n, J. Chambers *, T. Klein * & G. Parsons n
2002 article
The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions
Gougousi, T., Kelly, M. J., & Parsons, G. N. (2002, June 10). Applied Physics Letters, Vol. 80, pp. 4419–4421.
Contributors: T. Gougousi n, n & G. Parsons n
2001 patent
Method of forming a multi-layered dual-polysilicon structure
Washington, DC: U.S. Patent and Trademark Office.
1993 patent
Method of fabricating an integrated circuit interconnection
Washington, DC: U.S. Patent and Trademark Office.
1991 patent
Electrochemical method for defect delineation in silicon-on-insulator wafers
Washington, DC: U.S. Patent and Trademark Office.
1991 patent
Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies
Washington, DC: U.S. Patent and Trademark Office.
1991 patent
Porous siliconformation and etching process for use in silicon micromachining
Washington, DC: U.S. Patent and Trademark Office.
1991 patent
Transistor fabrication method
Washington, DC: U.S. Patent and Trademark Office.