@article{ford_thapaliya_kelly_roberts_lamb_2013, title={Semi-Batch Deoxygenation of Canola- and Lard-Derived Fatty Acids to Diesel-Range Hydrocarbons}, volume={27}, ISSN={["1520-5029"]}, DOI={10.1021/ef4016763}, abstractNote={Fatty acids (FAs) derived via thermal hydrolysis of food-grade lard and canola oil were deoxygenated in the liquid phase using a commercially available 5 wt % Pd/C catalyst. Online quadrupole mass spectrometry and gas chromatography were used to monitor the effluent gases from the semi-batch stirred autoclave reactors. Stearic, oleic, and palmitic acids were employed as model compounds. A catalyst lifetime exceeding 2200 turnovers for oleic acid deoxygenation was demonstrated at 300 °C and 15 atm under 10% H2. The initial decarboxylation rate of palmitic acid under 5% H2 decreases sharply with increasing initial concentration; in contrast, the initial decarbonylation rate increases linearly, indicative of first-order kinetics. Scale-up of diesel-range hydrocarbon production was investigated by increasing the reactor vessel size, initial FA concentration, and FA/catalyst mass ratio. Lower CO2 selectivity and batch productivity were observed at the larger scales (600 and 5000 mL), primarily because of the h...}, number={12}, journal={ENERGY & FUELS}, author={Ford, Jeffrey P. and Thapaliya, Nirajan and Kelly, M. Jason and Roberts, William L. and Lamb, H. Henry}, year={2013}, month={Dec}, pages={7489–7496} }
 @article{andrewes_kelly_vardhanabhuti_foegeding_2011, title={Dynamic modelling of whey protein-saliva interactions in the mouth and relation to astringency in acidic beverages}, volume={21}, ISSN={["1879-0143"]}, DOI={10.1016/j.idairyj.2011.02.011}, abstractNote={Whey proteins in acidic beverages (pH < 4.5) are astringent, producing a dry mouth-feel. Astringency is thought to be caused by interaction of food components with saliva, often leading to aggregate formation. Such interactions decrease saliva lubrication, form rough particles, and probably increase friction on oral surfaces – changing mouth-feel. Dynamic in vitro models were constructed to reproduce the likely interaction of whey proteins with saliva in the mouth during the course of beverage ingestion. Aggregate formation in the models was examined for numerous whey protein solutions under different conditions. Trends observed in the models were consistent with previous reported sensory evaluations of whey protein astringency. For example, maximum turbidity changed little in the models with increasing protein concentration, consistent with literature describing little increase in astringency with increasing protein concentration. Modelling mouth conditions, to measure protein–saliva interactions, related to astringency better than mixing saliva and protein in simple ratios.}, number={8}, journal={INTERNATIONAL DAIRY JOURNAL}, author={Andrewes, P. and Kelly, M. and Vardhanabhuti, B. and Foegeding, E. A.}, year={2011}, month={Aug}, pages={523–530} }
 @article{kelly_kim_roberts_lamb_2008, title={Characterization of Pd/gamma-Al2O3 Catalysts Prepared Using [Pd(hfac)(2)] in Liquid CO2}, volume={49}, ISSN={["1572-9028"]}, DOI={10.1007/s11244-008-9075-2}, number={3-4}, journal={TOPICS IN CATALYSIS}, author={Kelly, M. Jason and Kim, Jaehoon and Roberts, George W. and Lamb, H. Henry}, year={2008}, month={Aug}, pages={178–186} }
 @article{kim_kelly_lamb_roberts_kiserow_2008, title={Characterization of palladium (Pd) on alumina catalysts prepared using liquid carbon dioxide}, volume={112}, ISSN={["1932-7447"]}, DOI={10.1021/jp711495n}, abstractNote={Palladium (II) hexafluoroacetylacetonate (Pd(hfac)2) dissolved in liquid carbon dioxide (L-CO2) was used to deposit Pd nanoparticles onto low-surface-area α-alumina (13 m2/g) and high-surface-area γ-alumina (207 m2/g). These nanoparticles were prepared by contacting Pd(hfac)2 dissolved in L-CO2 with the alumina at 6.9 MPa and 28.5 °C and then slowly venting gaseous CO2 until L-CO2 was completely evaporated. After depressurization to remove the CO2 and unabsorbed Pd(hfac)2, the impregnated Pd(hfac)2 was reduced in hydrogen at a relatively low temperature of 75 °C. The adsorption isotherm of Pd(hfac)2 on γ-alumina suggests a weak interaction between the organometallic compound and the support. The average Pd particle size on the low-surface-area α-alumina, measured by scanning electron microscopy, increased from 13.1 ± 3.5 to 59.9 ± 11.3 nm, and the metal dispersion, measured by pulsed CO chemisorption, decreased from 11 to 3%, as the Pd loading on the alumina was increased from 0.15 to 1.54 wt %. With the ...}, number={28}, journal={JOURNAL OF PHYSICAL CHEMISTRY C}, author={Kim, Jaehoon and Kelly, M. Jason and Lamb, H. Henry and Roberts, George W. and Kiserow, Douglas J.}, year={2008}, month={Jul}, pages={10446–10452} }
 @article{kelly_han_musgrave_parsons_2005, title={In-situ infrared spectroscopy and density functional theory modeling of hafnium alkylamine adsorption on Si-OH and Si-H surfaces}, volume={17}, ISSN={["1520-5002"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000232743700015&KeyUID=WOS:000232743700015}, DOI={10.1021/cm051064h}, abstractNote={In-situ attenuated total internal reflection infrared spectroscopy has been used to examine initial adsorption and reaction steps in atomic layer deposition of HfO 2 from tetrakis(diethylamino) hafnium (TDEAHf) on SiO 2 and hydrogen-terminated Si(100) surfaces. At low deposition temperatures (25-250 °C), TDEAHf directly reacts with the Si-H surface, resulting in partial removal of Si-H bonds and formation of a four-membered Si-O-Hf-Si bonding structure that can rapidly oxidize. The hydrogen removal process is observed to continue through many cycles of TDEAHf/H 2 O exposure, signifying continued reactivity of the Hf precursor with the silicon surface. Density functional theory calculations have been performed for various reactions between tetrakis(dimethylamino) hafnium and Si-H surfaces, and several possible reaction pathways for hydrogen removal have been identified and analyzed. The calculations suggest that hydrogen removal proceeds by H abstraction by an amine ligand of the Hf precursor and that the abstraction reaction is made more facile by the presence of OH on the otherwise H-terminated Si surface.}, number={21}, journal={CHEMISTRY OF MATERIALS}, author={Kelly, MJ and Han, JH and Musgrave, CB and Parsons, GN}, year={2005}, month={Oct}, pages={5305–5314} }
 @misc{parsons_chambers_kelly_2003, title={High dielectric constant metal silicates formed by controlled metal-surface reactions}, volume={6,521,911}, number={2003 Feb. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Parsons, G. N. and Chambers, J. J. and Kelly, M. J.}, year={2003} }
 @article{gougousi_kelly_terry_parsons_2003, title={Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon}, volume={93}, ISSN={["1089-7550"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000180630200056&KeyUID=WOS:000180630200056}, DOI={10.1063/1.1531818}, abstractNote={In this article, we present data on the properties of La-based high-k dielectric films prepared by oxidation of La deposited by physical vapor deposition on silicon. Films are characterized by x-ray photoelectron spectroscopy, infrared absorption, and capacitance versus voltage analysis. We find that when we oxidize La metal sputter deposited on Si substrates, it reacts with the silicon substrate to form La silicate. La films as thick as 300 Å will react completely with Si under moderate oxidation conditions (900 °C for 10 min) suggesting a very rapid silicidation reaction between La and Si. Under some processing conditions the as-deposited films contain a small La2O3 component that reduces to La silicate upon anneal at high temperatures. La-silicate films do not phase separate into La2O3 and SiO2 upon annealing at 1050 °C, and their resistance to H2O incorporation depends critically on the oxidation temperature. Electrical measurements show a high concentration of positive fixed charge.}, number={3}, journal={JOURNAL OF APPLIED PHYSICS}, author={Gougousi, T and Kelly, MJ and Terry, DB and Parsons, GN}, year={2003}, month={Feb}, pages={1691–1696} }
 @misc{chittipeddi_kelly_2003, title={Silicon-on-insulator (SOI) semiconductor structure with additional trench including a conductive layer}, volume={6,538,283}, number={2003 Mar. 25}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Chittipeddi, S. and Kelly, M. J.}, year={2003} }
 @article{niu_ashcraft_kelly_chambers_klein_parsons_2002, title={Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications}, volume={91}, ISSN={["0021-8979"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000175069000098&KeyUID=WOS:000175069000098}, DOI={10.1063/1.1468253}, abstractNote={This article describes the kinetics of reactions that result in substrate consumption during formation of ultrathin transition metal oxides on silicon. Yttrium silicate films (∼40 Å) with an equivalent silicon dioxide thickness of ∼11 Å are demonstrated by physical vapor deposition (PVD) routes. Interface reactions that occur during deposition and during postdeposition treatment are observed and compared for PVD and chemical vapor deposition (CVD) yttrium oxides and CVD aluminum-oxide systems. Silicon diffusion, metal-silicon bond formation, and reactions involving hydroxides are proposed as critical processes in interface layer formation. For PVD of yttrium silicate, oxidation is thermally activated with an effective barrier of 0.3 eV, consistent with the oxidation of silicide being the rate-limited step. For CVD aluminum oxide, interface oxidation is consistent with a process limited by silicon diffusion into the deposited oxide layer.}, number={9}, journal={JOURNAL OF APPLIED PHYSICS}, author={Niu, D and Ashcraft, RW and Kelly, MJ and Chambers, JJ and Klein, TM and Parsons, GN}, year={2002}, month={May}, pages={6173–6180} }
 @article{gougousi_kelly_parsons_2002, title={The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions}, volume={80}, ISSN={["1077-3118"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000175904600044&KeyUID=WOS:000175904600044}, DOI={10.1063/1.1485122}, abstractNote={In this letter, reactions occurring at the interface between polycrystalline silicon (poly-Si) and LaSiOx high-dielectric-constant (high-k) insulating layers are characterized using x-ray photoelectron spectroscopy. Dielectrics were formed by sputter deposition of metal on silicon, followed by oxidation at 900 °C. Amorphous silicon was deposited on top by plasma-enhanced chemical vapor deposition from silane, followed by anneal at 650–1050 °C. We show that if the dielectric layer is exposed to sufficient water vapor before polysilicon deposition, annealing at 1050 °C for 10 s is sufficient to completely oxidize ∼25 Å of deposited silicon. Minimal reaction is observed without deliberate water exposure. This demonstrates the importance of the dielectric surface condition in determining reactivity of high-k/polysilicon interfaces.}, number={23}, journal={APPLIED PHYSICS LETTERS}, author={Gougousi, T and Kelly, MJ and Parsons, GN}, year={2002}, month={Jun}, pages={4419–4421} }
 @misc{chittipeddi_kelly_2001, title={Method of forming a multi-layered dual-polysilicon structure}, volume={6,191,017}, number={2001 Feb. 20}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Chittipeddi, S. and Kelly, M. J.}, year={2001} }
 @misc{chittipeddi_kelly_1993, title={Method of fabricating an integrated circuit interconnection}, volume={5,268,329}, number={1993 Dec. 7}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Chittipeddi, S. and Kelly, M. J.}, year={1993} }
 @misc{guilinger_jones_kelly_medernach_stevenson_tsao_1991, title={Electrochemical method for defect delineation in silicon-on-insulator wafers}, volume={5,015,346}, number={1991 May 14}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Guilinger, T. R. and Jones, H. D. T. and Kelly, M. J. and Medernach, J. W. and Stevenson, J. O. and Tsao, S. S.}, year={1991} }
 @misc{blewer_gullinger_kelly_tsao_1991, title={Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies}, volume={5,023,200}, number={1991 Jun. 11}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Blewer, R. S. and Gullinger, T. R. and Kelly, M. J. and Tsao, S. S.}, year={1991} }
 @misc{guilinger_jones_kelly_martin_stevenson_tsao_1991, title={Porous siliconformation and etching process for use in silicon micromachining}, volume={4,995,954}, number={1991 Feb. 26}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Guilinger, T. R. and Jones, H. D. T. and Kelly, M. J. and Martin, S. B. and Stevenson, J. O. and Tsao, S. S.}, year={1991} }
 @misc{chittipeddi_cochran_kelly_1991, title={Transistor fabrication method}, volume={5,045,486}, number={1991 Sep. 3}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Chittipeddi, S. and Cochran, W. T. and Kelly, M. J.}, year={1991} }