Michael J. Kelly Ford, J. P., Thapaliya, N., Kelly, M. J., Roberts, W. L., & Lamb, H. H. (2013). Semi-Batch Deoxygenation of Canola- and Lard-Derived Fatty Acids to Diesel-Range Hydrocarbons. ENERGY & FUELS, 27(12), 7489–7496. https://doi.org/10.1021/ef4016763 Andrewes, P., Kelly, M., Vardhanabhuti, B., & Foegeding, E. A. (2011). Dynamic modelling of whey protein-saliva interactions in the mouth and relation to astringency in acidic beverages. INTERNATIONAL DAIRY JOURNAL, 21(8), 523–530. https://doi.org/10.1016/j.idairyj.2011.02.011 Kelly, M. J., Kim, J., Roberts, G. W., & Lamb, H. H. (2008). Characterization of Pd/gamma-Al2O3 Catalysts Prepared Using [Pd(hfac)(2)] in Liquid CO2. TOPICS IN CATALYSIS, 49(3-4), 178–186. https://doi.org/10.1007/s11244-008-9075-2 Kim, J., Kelly, M. J., Lamb, H. H., Roberts, G. W., & Kiserow, D. J. (2008). Characterization of palladium (Pd) on alumina catalysts prepared using liquid carbon dioxide. JOURNAL OF PHYSICAL CHEMISTRY C, 112(28), 10446–10452. https://doi.org/10.1021/jp711495n Kelly, M. J., Han, J. H., Musgrave, C. B., & Parsons, G. N. (2005). In-situ infrared spectroscopy and density functional theory modeling of hafnium alkylamine adsorption on Si-OH and Si-H surfaces. CHEMISTRY OF MATERIALS, 17(21), 5305–5314. https://doi.org/10.1021/cm051064h Parsons, G. N., Chambers, J. J., & Kelly, M. J. (2003). High dielectric constant metal silicates formed by controlled metal-surface reactions. Washington, DC: U.S. Patent and Trademark Office. Gougousi, T., Kelly, M. J., Terry, D. B., & Parsons, G. N. (2003). Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon. JOURNAL OF APPLIED PHYSICS, 93(3), 1691–1696. https://doi.org/10.1063/1.1531818 Chittipeddi, S., & Kelly, M. J. (2003). Silicon-on-insulator (SOI) semiconductor structure with additional trench including a conductive layer. Washington, DC: U.S. Patent and Trademark Office. Niu, D., Ashcraft, R. W., Kelly, M. J., Chambers, J. J., Klein, T. M., & Parsons, G. N. (2002). Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications. JOURNAL OF APPLIED PHYSICS, 91(9), 6173–6180. https://doi.org/10.1063/1.1468253 Gougousi, T., Kelly, M. J., & Parsons, G. N. (2002). The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions. APPLIED PHYSICS LETTERS, 80(23), 4419–4421. https://doi.org/10.1063/1.1485122 Chittipeddi, S., & Kelly, M. J. (2001). Method of forming a multi-layered dual-polysilicon structure. Washington, DC: U.S. Patent and Trademark Office. Chittipeddi, S., & Kelly, M. J. (1993). Method of fabricating an integrated circuit interconnection. Washington, DC: U.S. Patent and Trademark Office. Guilinger, T. R., Jones, H. D. T., Kelly, M. J., Medernach, J. W., Stevenson, J. O., & Tsao, S. S. (1991). Electrochemical method for defect delineation in silicon-on-insulator wafers. Washington, DC: U.S. Patent and Trademark Office. Blewer, R. S., Gullinger, T. R., Kelly, M. J., & Tsao, S. S. (1991). Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies. Washington, DC: U.S. Patent and Trademark Office. Guilinger, T. R., Jones, H. D. T., Kelly, M. J., Martin, S. B., Stevenson, J. O., & Tsao, S. S. (1991). Porous siliconformation and etching process for use in silicon micromachining. Washington, DC: U.S. Patent and Trademark Office. Chittipeddi, S., Cochran, W. T., & Kelly, M. J. (1991). Transistor fabrication method. Washington, DC: U.S. Patent and Trademark Office.