@article{loesing_guryanov_phillips_griffis_2002, title={Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs+, O-2(+), and CsC6- primary ion beams}, volume={20}, ISSN={["2166-2746"]}, DOI={10.1116/1.1450588}, abstractNote={It is well known that reducing the work function of the sample surface using Cs+ ions increases the negative ion yield of phosphorus. It is also well known that a shallow primary beam implantation depth (RP) is required for achieving high depth resolution during the analysis of ultrashallow implant profiles. The combination of the opposite polarities of the positive Cs+ primary ion beam and the negatively biased sample (the combination most often used for P analysis using magnetic sector secondary ion mass spectroscopy) unfortunately accelerates the Cs+ ions towards the sample thus limiting the degree to which the primary ion impact energy can be reduced [R. Loesing, G. M. Guryanov, J. L. Hunter, and D. P. Griffis, J. Vac. Sci. Technol. B 18, 509 (2000)]. A low primary ion beam impact energy and high impact angle, both of which result in lower RP, can be obtained using a negatively charged cluster ion such as CsC6− (Peabody negative ion source) impacting on a negatively biased sample [G. Gillen, L. King, ...}, number={2}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Loesing, R and Guryanov, GM and Phillips, MS and Griffis, DP}, year={2002}, pages={507–511} }