@article{gougousi_terry_parsons_2006, title={Charge generation during oxidation of thin Hf metal films on silicon}, volume={513}, ISSN={["0040-6090"]}, DOI={10.1016/j.tsf.2006.02.004}, number={1-2}, journal={THIN SOLID FILMS}, author={Gougousi, Theodosia and Terry, David B. and Parsons, Gregory N.}, year={2006}, month={Aug}, pages={201–205} }
 @article{barua_gougousi_young_parsons_2006, title={Supercritical-carbon dioxide-assisted cyclic deposition of metal oxide and metal thin films}, volume={88}, ISSN={["1077-3118"]}, DOI={10.1063/1.2181651}, number={9}, journal={APPLIED PHYSICS LETTERS}, author={Barua, D and Gougousi, T and Young, ED and Parsons, GN}, year={2006}, month={Feb} }
 @article{park_doub_gougousi_parsons_2005, title={Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition}, volume={86}, ISSN={["0003-6951"]}, DOI={10.1063/1.1852079}, number={5}, journal={APPLIED PHYSICS LETTERS}, author={Park, KJ and Doub, JM and Gougousi, T and Parsons, GN}, year={2005}, month={Jan} }
 @article{gougousi_parsons_2004, title={Postdeposition reactivity of sputter-deposited high-dielectric-constant films with ambient H2O and carbon-containing species}, volume={95}, ISSN={["1089-7550"]}, DOI={10.1063/1.1636513}, number={3}, journal={JOURNAL OF APPLIED PHYSICS}, author={Gougousi, T and Parsons, GN}, year={2004}, month={Feb}, pages={1391–1396} }
 @article{gougousi_niu_ashcraft_parsons_2003, title={Carbonate formation during post-deposition ambient exposure of high-k dielectrics}, volume={83}, ISSN={["0003-6951"]}, DOI={10.1063/1.1623316}, number={17}, journal={APPLIED PHYSICS LETTERS}, author={Gougousi, T and Niu, D and Ashcraft, RW and Parsons, GN}, year={2003}, month={Oct}, pages={3543–3545} }
 @article{gougousi_kelly_terry_parsons_2003, title={Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon}, volume={93}, ISSN={["1089-7550"]}, DOI={10.1063/1.1531818}, number={3}, journal={JOURNAL OF APPLIED PHYSICS}, author={Gougousi, T and Kelly, MJ and Terry, DB and Parsons, GN}, year={2003}, month={Feb}, pages={1691–1696} }
 @article{gougousi_kelly_parsons_2002, title={The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions}, volume={80}, ISSN={["1077-3118"]}, DOI={10.1063/1.1485122}, number={23}, journal={APPLIED PHYSICS LETTERS}, author={Gougousi, T and Kelly, MJ and Parsons, GN}, year={2002}, month={Jun}, pages={4419–4421} }