@article{stuart_gray_nevola_su_sachet_ulrich_dougherty_2016, title={Magnetoelectric oxide films for spin manipulation in graphene}, volume={10}, DOI={10.1002/pssr.201510433}, number={3}, journal={Physica Status Solidi-Rapid Research Letters}, author={Stuart, S. C. and Gray, B. and Nevola, D. and Su, L. and Sachet, E. and Ulrich, M. and Dougherty, D. B.}, year={2016}, pages={242–247} }
 @article{stuart_satchet_sandin_maria_rowe_dougherty_ulrich_2013, title={Smooth MgO films grown on graphite and graphene by pulsed laser deposition}, volume={31}, DOI={10.1116/1.4818511}, number={5}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Stuart, S. C. and Satchet, E. and Sandin, A. and Maria, J. P. and Rowe, J. E. and Dougherty, D. B. and Ulrich, M.}, year={2013} }
 @article{vasic_sadowski_choi_zhou_wiebe_cheong_rowe_ulrich_2010, title={Surface reconstruction of hexagonal Y-doped HoMnO3 and LuMnO3 studied using low-energy electron diffraction}, volume={81}, number={16}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Vasic, R. and Sadowski, J. T. and Choi, Y. J. and Zhou, H. D. and Wiebe, C. R. and Cheong, S. W. and Rowe, J. E. and Ulrich, M. D.}, year={2010} }
 @inproceedings{lucovsky_long_chung_seo_watts_vasic_ulrich_2009, title={Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics}, volume={27}, number={1}, booktitle={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Long, J. P. and Chung, K. B. and Seo, H. and Watts, B. and Vasic, R. and Ulrich, M. D.}, year={2009}, pages={294–299} }
 @article{lee_seo_lucovsky_fleming_ulrich_luning_2008, title={Bulk defects in nano-crystalline and in non-crystalline HfO2-based thin film dielectrics}, volume={517}, DOI={10.1016/j.tsf.2008.08.098}, number={1}, journal={Thin Solid Films}, author={Lee, S. and Seo, H. and Lucovsky, G. and Fleming, L. B. and Ulrich, M. D. and Luning, J.}, year={2008}, pages={437–440} }
 @article{lucovsky_seo_lee_fleming_ulrich_luning_2007, title={Defect reduction by suppression of pi-bonding coupling in nano- and non-crystalline high-(medium)-kappa gate dielectrics}, volume={84}, DOI={10.1016/j.mee.2007.04.062}, number={9-10}, journal={Microelectronic Engineering}, author={Lucovsky, G. and Seo, H. and Lee, S. and Fleming, L. B. and Ulrich, M. D. and Luning, J.}, year={2007}, pages={2350–2353} }
 @article{lucovsky_seo_lee_fleming_ulrich_luning_lysaght_bersuker_2007, title={Intrinsic electronically active defects in transition metal elemental oxides}, volume={46}, DOI={10.1143/JJAP.46.1899}, number={4B}, journal={Communications & Review Papers}, author={Lucovsky, G. and Seo, H. and Lee, S. and Fleming, L. B. and Ulrich, M. D. and Luning, J. and Lysaght, P. and Bersuker, G.}, year={2007}, pages={1899–1909} }
 @article{seo_lucovsky_fleming_ulrich_luning_koster_geballe_2007, title={Length scales for coherent pi-bonding interactions in complex high-k oxide dielectrics and their interfaces}, volume={84}, DOI={10.1016/j.mee.2007.04.069}, number={9-10}, journal={Microelectronic Engineering}, author={Seo, H. and Lucovsky, G. and Fleming, L. B. and Ulrich, M. D. and Luning, J. and Koster, G. and Geballe, T. H.}, year={2007}, pages={2298–2301} }
 @article{lucovsky_luning_fleming_ulrich_rowe_seo_lee_lysaght_bersuker_2007, title={Spectroscopic studies of O-vacancy defects in transition metal oxides}, volume={18}, DOI={10.1007/s10854-007-9192-x}, journal={Journal of Materials Science. Materials in Electronics.}, author={Lucovsky, G. and Luning, J. and Fleming, L. B. and Ulrich, M. D. and Rowe, J. E. and Seo, H. and Lee, S. and Lysaght, P. and Bersuker, G.}, year={2007}, pages={S263–266} }
 @article{lucovsky_seo_fleming_ulrich_luning_lysaght_bersuker_2006, title={Intrinsic bonding defects in transition metal elemental oxides}, volume={46}, DOI={10.1016/j.microrel.2006.07.032}, number={9-11}, journal={Microelectronics Reliability}, author={Lucovsky, G. and Seo, H. and Fleming, L. B. and Ulrich, M. D. and Luning, J. and Lysaght, P. and Bersuker, G.}, year={2006}, pages={1623–1628} }
 @article{chan_wertheim_wang_ulrich_rowe_madey_2005, title={Surface atom core-level shifts of clean and oxygen-covered Re(1231)}, volume={72}, number={3}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Chan, A. S. Y. and Wertheim, G. K. and Wang, H. and Ulrich, M. D. and Rowe, J. E. and Madey, T. E.}, year={2005} }
 @article{ellis_park_hulbert_ulrich_rowe_2004, title={Influence of substrate temperature on epitaxial copper phthalocyanines studied by photoemission spectroscopy}, volume={95}, DOI={10.1063/1.1637137}, number={3}, journal={Journal of Applied Physics}, author={Ellis, T. S. and Park, K. T. and Hulbert, S. L. and Ulrich, M. D. and Rowe, J. E.}, year={2004}, pages={982–988} }
 @article{fleming_ulrich_efimenko_genzer_chan_madey_oh_zhou_rowe_2004, title={Near-edge absorption fine structure and UV photoemission spectroscopy studies of aligned single-walled carbon nanotubes on Si(100) substrates}, volume={22}, DOI={10.1116/1.1775190}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Fleming, L. and Ulrich, M. D. and Efimenko, Kirill and Genzer, Jan and Chan, A. S. Y. and Madey, T. E. and Oh, S. J. and Zhou, O. and Rowe, J. E.}, year={2004}, pages={2000–2004} }
 @article{ulrich_rowe_niu_parsons_2003, title={Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications}, volume={21}, DOI={10.1116/1.1593647}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Ulrich, M. D. and Rowe, J. E. and Niu, D. and Parsons, G. N.}, year={2003}, pages={1792–1797} }
 @article{ulrich_hong_rowe_lucovsky_chan_madey_2003, title={Soft x-ray photoelectron spectroscopy of (HfO2)(x)(SiO2)(1-x) high-k gate-dielectric structures}, volume={21}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Ulrich, M. D. and Hong, J. G. and Rowe, J. E. and Lucovsky, G. and Chan, A. S. Y. and Madey, T. E.}, year={2003}, pages={1777–1782} }
 @article{ulrich_barnes_vining_2002, title={Effect of contact resistance in solid-state thermionic refrigeration}, volume={92}, DOI={10.1063/1.1481777}, number={1}, journal={Journal of Applied Physics}, author={Ulrich, M. D. and Barnes, P. A. and Vining, C. B.}, year={2002}, pages={245–247} }
 @article{ulrich_johnson_hong_rowe_lucovsky_quinton_madey_2002, title={Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications}, volume={20}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Ulrich, M. D. and Johnson, R. S. and Hong, J. G. and Rowe, J. E. and Lucovsky, G. and Quinton, J. S. and Madey, T. E.}, year={2002}, pages={1732–1738} }