2011 journal article
Characterization of dislocation arrays in AlN single crystals grown by PVT
Physica Status Solidi (a), 208(7), 1545–1547.
2011 article
Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.
2011 journal article
Sharp bound and free exciton lines from homoepitaxial AlN
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(7), 1520–1522.
2009 patent
Dense, shaped articles constructed of a refractory material and methods of preparing such articles
2008 journal article
Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition
JOURNAL OF APPLIED PHYSICS, 104(1).
2008 journal article
Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition
APPLIED PHYSICS LETTERS, 93(2).
2008 journal article
Seeded growth of AlN on SiC substrates and defect characterization
JOURNAL OF CRYSTAL GROWTH, 310(10), 2464–2470.
2007 journal article
Simultaneous growth of a GaN p/n lateral polarity junction by polar selective doping
APPLIED PHYSICS LETTERS, 91(21).
2007 journal article
Synthesis of erbium-doped gallium nitride crystals by the ammonothermal route
JOURNAL OF CRYSTAL GROWTH, 308(1), 71–79.
2007 journal article
X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution
Journal of Electronic Materials, 36(4), 414–419.
2006 article
Characterization of bulk grown GaN and AlN single crystal materials
Raghothamachar, B., Bai, J., Dudley, M., Dalmau, R., Zhuang, D. J., Herro, Z., … Spencer, M. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 349–353.
2005 article
AlN bulk crystals grown on SiC seeds
Dalmau, R., Schlesser, R., Rodriguez, B. J., Nemanich, R. J., & Sitar, Z. (2005, July 15). JOURNAL OF CRYSTAL GROWTH, Vol. 281, pp. 68–74.
2004 journal article
Band-edge exciton states in AlN single crystals and epitaxial layers
APPLIED PHYSICS LETTERS, 85(19), 4334–4336.
2004 journal article
Model for the influence of boron impurities on the morphology of AIN grown by physical vapor transport
SURFACE SCIENCE, 560(1-3), L202–L206.
2004 journal article
The growth and optical properties of large, high-quality AlN single crystals
JOURNAL OF APPLIED PHYSICS, 96(10), 5870–5876.
2002 journal article
Seeded growth of AlN bulk single crystals by sublimation
JOURNAL OF CRYSTAL GROWTH, 241(4), 416–420.
2002 article
Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN
Raghothamachar, B., Vetter, W. M., Dudley, M., Dalmau, R., Schlesser, R., Sitar, Z., … Kolis, J. W. (2002, December). JOURNAL OF CRYSTAL GROWTH, Vol. 246, pp. 271–280.
Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.
Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.