Works (17)

Updated: July 5th, 2023 16:00

2011 journal article

Characterization of dislocation arrays in AlN single crystals grown by PVT

Physica Status Solidi (a), 208(7), 1545–1547.

By: R. Dalmau*, B. Moody*, J. Xie*, R. Collazo n & Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: aluminum nitride; dislocations; etch pits; growth from vapor; low angle grain boundaries; single crystals
Sources: Web Of Science, ORCID, Crossref
Added: August 6, 2018

2011 article

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

By: R. Collazo n, S. Mita*, J. Xie*, A. Rice n, J. Tweedie n, R. Dalmau*, Z. Sitar n, C. Wetzel, A. Khan

co-author countries: United States of America 🇺🇸
author keywords: aluminium nitride; aluminium gallium nitride; n-type doping; UV light emitting diodes
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Sharp bound and free exciton lines from homoepitaxial AlN

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(7), 1520–1522.

By: M. Feneberg*, B. Neuschl*, K. Thonke*, R. Collazo n, A. Rice n, Z. Sitar n, R. Dalmau*, J. Xie*, S. Mita*, R. Goldhahn*

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
author keywords: aluminum nitride; donors; excitons; photoluminescence
Sources: Web Of Science, ORCID
Added: August 6, 2018

2009 patent

Dense, shaped articles constructed of a refractory material and methods of preparing such articles

By: R. Schlesser, R. Dalmau, V. Noveski & Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 104(1).

By: S. Mita n, R. Collazo n, A. Rice n, R. Dalmau n & Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2008 journal article

Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition

APPLIED PHYSICS LETTERS, 93(2).

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Seeded growth of AlN on SiC substrates and defect characterization

JOURNAL OF CRYSTAL GROWTH, 310(10), 2464–2470.

By: P. Lu n, J. Edgar*, C. Cao*, K. Hohn*, R. Dalmau n, R. Schlesser n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: X-ray diffraction; growth from vapor; single-crystal growth; nitrides
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Simultaneous growth of a GaN p/n lateral polarity junction by polar selective doping

APPLIED PHYSICS LETTERS, 91(21).

By: R. Collazo n, S. Mita n, A. Rice n, R. Dalmau n & Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 journal article

Synthesis of erbium-doped gallium nitride crystals by the ammonothermal route

JOURNAL OF CRYSTAL GROWTH, 308(1), 71–79.

By: B. Adekore n, M. Callahan*, L. Bouthillette*, R. Dalmau n & Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: ammonothermal; bulk GaN; growth from solution; nitrides; rare earth compounds; semiconducting III-V materials
Source: Web Of Science
Added: August 6, 2018

2007 journal article

X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution

Journal of Electronic Materials, 36(4), 414–419.

By: R. Dalmau n, R. Collazo n, S. Mita n & Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2006 article

Characterization of bulk grown GaN and AlN single crystal materials

Raghothamachar, B., Bai, J., Dudley, M., Dalmau, R., Zhuang, D. J., Herro, Z., … Spencer, M. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 349–353.

By: B. Raghothamachar*, J. Bai*, M. Dudley*, R. Dalmau n, D. Zhuang n, Z. Herro n, R. Schlesser n, Z. Sitar n ...

co-author countries: United States of America 🇺🇸
author keywords: defects; high resolution X-ray diffraction; X-ray topography; single crystal growth; aluminum nitride; gallium nitride
Source: Web Of Science
Added: August 6, 2018

2005 article

AlN bulk crystals grown on SiC seeds

Dalmau, R., Schlesser, R., Rodriguez, B. J., Nemanich, R. J., & Sitar, Z. (2005, July 15). JOURNAL OF CRYSTAL GROWTH, Vol. 281, pp. 68–74.

By: R. Dalmau n, R. Schlesser n, B. Rodriguez n, R. Nemanich n & Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: growth from vapor; seed crystals; nitrides
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Band-edge exciton states in AlN single crystals and epitaxial layers

APPLIED PHYSICS LETTERS, 85(19), 4334–4336.

By: L. Chen*, B. Skromme*, R. Dalmau n, R. Schlesser n, Z. Sitar n, C. Chen*, W. Sun*, J. Yang* ...

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Model for the influence of boron impurities on the morphology of AIN grown by physical vapor transport

SURFACE SCIENCE, 560(1-3), L202–L206.

By: D. Brenner n, R. Schlesser n, Z. Sitar n, R. Dalmau n, R. Collazo n & Y. Li n

co-author countries: United States of America 🇺🇸
author keywords: nitrides; boron; growth; surface structure; morphology; roughness; and topography
Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 journal article

The growth and optical properties of large, high-quality AlN single crystals

JOURNAL OF APPLIED PHYSICS, 96(10), 5870–5876.

By: M. Strassburg*, J. Senawiratne*, N. Dietz*, U. Haboeck*, A. Hoffmann*, V. Noveski n, R. Dalmau n, R. Schlesser n, Z. Sitar n

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Seeded growth of AlN bulk single crystals by sublimation

JOURNAL OF CRYSTAL GROWTH, 241(4), 416–420.

By: R. Schlesser n, R. Dalmau n & Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: growth from vapors; seed crystals; single crystal growth; nitrides
Source: Web Of Science
Added: August 6, 2018

2002 article

Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN

Raghothamachar, B., Vetter, W. M., Dudley, M., Dalmau, R., Schlesser, R., Sitar, Z., … Kolis, J. W. (2002, December). JOURNAL OF CRYSTAL GROWTH, Vol. 246, pp. 271–280.

By: B. Raghothamachar*, W. Vetter*, M. Dudley*, R. Dalmau n, R. Schlesser n, Z. Sitar n, E. Michaels*, J. Kolis*

co-author countries: United States of America 🇺🇸
author keywords: defects; X-ray topography; growth from vapor; single crystal growth; aluminum nitride; gallium nitride
Source: Web Of Science
Added: August 6, 2018

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.