Rafael F. Dalmau

Characterization of dislocation arrays in AlN single crystals grown by PVT

Physica Status Solidi (a), 208(7), 1545–1547.

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

Sharp bound and free exciton lines from homoepitaxial AlN

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(7), 1520–1522.

Dense, shaped articles constructed of a refractory material and methods of preparing such articles

Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 104(1).

Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition

APPLIED PHYSICS LETTERS, 93(2).

Seeded growth of AlN on SiC substrates and defect characterization

JOURNAL OF CRYSTAL GROWTH, 310(10), 2464–2470.

Simultaneous growth of a GaN p/n lateral polarity junction by polar selective doping

APPLIED PHYSICS LETTERS, 91(21).

Synthesis of erbium-doped gallium nitride crystals by the ammonothermal route

JOURNAL OF CRYSTAL GROWTH, 308(1), 71–79.

X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution

Journal of Electronic Materials, 36(4), 414–419.

Characterization of bulk grown GaN and AlN single crystal materials

Raghothamachar, B., Bai, J., Dudley, M., Dalmau, R., Zhuang, D. J., Herro, Z., … Spencer, M. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 349–353.

AlN bulk crystals grown on SiC seeds

Dalmau, R., Schlesser, R., Rodriguez, B. J., Nemanich, R. J., & Sitar, Z. (2005, July 15). JOURNAL OF CRYSTAL GROWTH, Vol. 281, pp. 68–74.

Band-edge exciton states in AlN single crystals and epitaxial layers

APPLIED PHYSICS LETTERS, 85(19), 4334–4336.

Model for the influence of boron impurities on the morphology of AIN grown by physical vapor transport

SURFACE SCIENCE, 560(1-3), L202–L206.

The growth and optical properties of large, high-quality AlN single crystals

JOURNAL OF APPLIED PHYSICS, 96(10), 5870–5876.

Seeded growth of AlN bulk single crystals by sublimation

JOURNAL OF CRYSTAL GROWTH, 241(4), 416–420.

Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN

Raghothamachar, B., Vetter, W. M., Dudley, M., Dalmau, R., Schlesser, R., Sitar, Z., … Kolis, J. W. (2002, December). JOURNAL OF CRYSTAL GROWTH, Vol. 246, pp. 271–280.