@article{hinkle_fulton_nemanich_lucovsky_2004, title={A  novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices}, volume={72}, DOI={10.1016/j.mee.2003.12.047}, number={04-Jan}, journal={Microelectronic Engineering}, author={Hinkle, C. L. and Fulton, C. and Nemanich, R. J. and Lucovsky, G.}, year={2004}, pages={257–262} }
 @article{lucovsky_rayner_kang_hinkle_hong_2004, title={A  spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys}, volume={566}, DOI={10.1016/j.susc.2004.06.010}, number={Sep 20 2004}, journal={Surface Science}, author={Lucovsky, G. and Rayner, G. B. and Kang, D. and Hinkle, C. L. and Hong, J. G.}, year={2004}, pages={772–776} }
 @article{lucovsky_rayner_kang_hinkle_hong_2004, title={A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys}, volume={234}, DOI={10.1016/j.apsusc.2004.05.075}, number={37990}, journal={Applied Surface Science}, author={Lucovsky, G. and Rayner, G. B. and Kang, D. and Hinkle, C. L. and Hong, J. G.}, year={2004}, pages={429–433} }
 @article{rayner_kang_hinkle_hong_lucovsky_2004, title={Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity}, volume={72}, DOI={10.1016/j.mee.2004.01.008}, number={04-Jan}, journal={Microelectronic Engineering}, author={Rayner, G. B. and Kang, D. and Hinkle, C. L. and Hong, J. G. and Lucovsky, G.}, year={2004}, pages={304–309} }
 @article{niu_ashcraft_hinkle_parsons_2004, title={Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics}, volume={22}, DOI={10.1116/1.1666880}, number={3}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Niu, D. and Ashcraft, R. W. and Hinkle, C. and Parsons, G. N.}, year={2004}, pages={445–451} }
 @article{hinkle_fulton_nemanich_lucovsky_2004, title={Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers}, volume={566}, DOI={10.1016/j.susc.2004.06.084}, number={Sep 20 2004}, journal={Surface Science}, author={Hinkle, C. L. and Fulton, C. and Nemanich, R. J. and Lucovsky, G.}, year={2004}, pages={1185–1189} }
 @article{hinkle_fulton_nemanich_lucovsky_2004, title={Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers}, volume={234}, DOI={10.1016/j.apsusc.2004-05.076}, number={37990}, journal={Applied Surface Science}, author={Hinkle, C. L. and Fulton, C. and Nemanich, R. J. and Lucovsky, G.}, year={2004}, pages={240–245} }
 @article{soares_bastos_pezzi_miotti_driemeier_baumvol_hinkle_lucovsky_2004, title={Nitrogen bonding, stability, and transport in AlON films on Si}, volume={84}, DOI={10.1063/1.1763230}, number={24}, journal={Applied Physics Letters}, author={Soares, G. V. and Bastos, K. P. and Pezzi, R. P. and Miotti, L. and Driemeier, C. and Baumvol, I. J. R. and Hinkle, C. and Lucovsky, G.}, year={2004}, pages={4992–4994} }
 @article{edge_schlom_brewer_chabal_williams_chambers_hinkle_lucovsky_yang_stemmer_et al._2004, title={Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon}, volume={84}, DOI={10.1063/1.1759065}, number={23}, journal={Applied Physics Letters}, author={Edge, L. F. and Schlom, D. G. and Brewer, R. T. and Chabal, Y. J. and Williams, J. R. and Chambers, S. A. and Hinkle, C. and Lucovsky, G. and Yang, Y. and Stemmer, S. and et al.}, year={2004}, pages={4629–4631} }
 @article{bastos_pezzi_miotti_soares_driemeier_morais_baumvol_hinkle_lucovsky_2004, title={Thermal stability of plasma-nitrided aluminum oxide films on Si}, volume={84}, DOI={10.1063/1.1638629}, number={1}, journal={Applied Physics Letters}, author={Bastos, K. P. and Pezzi, R. P. and Miotti, L. and Soares, G. V. and Driemeier, C. and Morais, J. and Baumvol, I. J. R. and Hinkle, C. and Lucovsky, G.}, year={2004}, pages={97–99} }
 @article{hinkle_lucovsky_2003, title={Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3}, volume={216}, DOI={10.1016/S0169-4332(03)00499-9}, number={04-Jan}, journal={Applied Surface Science}, author={Hinkle, C. and Lucovsky, G.}, year={2003}, pages={124–132} }
 @article{johnson_hong_hinkle_lucovsky_2002, title={Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices}, volume={46}, DOI={10.1016/S0038-1101(02)00152-1}, number={11}, journal={Solid-state Electronics}, author={Johnson, R. S. and Hong, J. G. and Hinkle, C. and Lucovsky, G.}, year={2002}, pages={1799–1805} }
 @article{johnson_hong_hinkle_lucovsky_2002, title={Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications}, volume={20}, number={3}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Johnson, R. S. and Hong, J. G. and Hinkle, C. and Lucovsky, G.}, year={2002}, pages={1126–1131} }