@article{hinkle_fulton_nemanich_lucovsky_2004, title={A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices}, volume={72}, ISSN={["1873-5568"]}, DOI={10.1016/j.mee.2003.12.047}, abstractNote={There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15–25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to Si, EB, and the effective electron tunneling mass, meff, which mitigate gains from increased thickness. A novel technique, based on stacked dielectrics, is used to obtain the tunneling mass-conduction band offset energy product. When combined with optical measurements of tunneling barriers, this yields direct estimates of the tunneling mass.}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Hinkle, CL and Fulton, C and Nemanich, RJ and Lucovsky, G}, year={2004}, month={Apr}, pages={257–262} }
 @article{lucovsky_rayner_kang_hinkle_hong_2004, title={A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys}, volume={566}, ISSN={["0039-6028"]}, DOI={10.1016/j.susc.2004.06.010}, abstractNote={Abstract Chemical phase separation at device processing temperatures is an important issue for integration of Zr and Hf silicates alloys into advanced CMOS devices. Chemical phase separation into ZrO 2 and SiO 2 has been detected by different spectroscopic techniques, including Fourier transform infra red, X-ray photoelectron, and X-ray absorption spectroscopy, as well as X-ray diffraction and high resolution transmission electron microscopy imaging as well. Comparisons between these techniques for Zr silicates identify an unambiguous approach to distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity.}, journal={SURFACE SCIENCE}, author={Lucovsky, G and Rayner, GB and Kang, D and Hinkle, CL and Hong, JG}, year={2004}, month={Sep}, pages={772–776} }
 @article{lucovsky_rayner_kang_hinkle_hong_2004, title={A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys}, volume={234}, ISSN={["0169-4332"]}, DOI={10.1016/j.apsusc.2004.05.075}, abstractNote={Abstract Chemical phase separation at device processing temperatures is an important issue for integration of Zr and Hf silicates alloys into advanced complementary metal oxide semiconductor (CMOS) devices. Chemical phase separation into ZrO 2 and SiO 2 has been detected by different spectroscopic techniques, including Fourier transform infrared, X-ray photoelectron, and X-ray absorption spectroscopy, as well as X-ray diffraction and high resolution transmission electron microscopy imaging as well. Comparisons between these techniques for Zr silicates identify an unambiguous approach to distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity.}, number={1-4}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, G and Rayner, GB and Kang, D and Hinkle, CL and Hong, JG}, year={2004}, month={Jul}, pages={429–433} }
 @article{rayner_kang_hinkle_hong_lucovsky_2004, title={Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity}, volume={72}, ISSN={["1873-5568"]}, DOI={10.1016/j.mee.2004.01.008}, abstractNote={Chemical phase separation at processing temperatures is an important issue for integration of Zr and Hf silicates alloys into advanced CMOS devices. Chemical phase separation into ZrO2 and SiO2 has been detected by different spectroscopic techniques, including Fourier transform infrared, X-ray photoelectron, and X-ray absorption spectroscopy, as well as X-ray diffraction and high resolution transmission electron microscopy imaging as well. Comparisons between techniques for Zr silicates identify an unambiguous approach to distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity. This is important since all modes of chemical separation degrade dielectric properties required for high-K applications.}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Rayner, GB and Kang, D and Hinkle, CL and Hong, JG and Lucovsky, G}, year={2004}, month={Apr}, pages={304–309} }
 @article{niu_ashcraft_hinkle_parsons_2004, title={Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics}, volume={22}, ISSN={["1520-8559"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000222091800002&KeyUID=WOS:000222091800002}, DOI={10.1116/1.1666880}, abstractNote={In this article, we report the effect of nitrogen plasma, during and after deposition, on nitrogen incorporation into yttrium oxide dielectric films. Films are deposited using a yttrium β-diketonate precursor (Y(tmhd)3) introduced downstream from a O2 or N2 plasma. The precursor acted as a significant source of oxygen, and only small amounts of N (<10 at. %) were incorporated in the films. Chemical bonding, concentration, and distribution of N in Y-oxide films after deposition and after high-temperature anneal were characterized using x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and Auger electron spectroscopy. C–N is the primary form of nitrogen bonding in the as-deposited films, and IR results indicate the exchange of N with O to form C–O bonds occurs during prolonged exposure to air. High-temperature annealing releases N from the surface of as-deposited films, and results in a film structure that is resistant to further N incorporation. Results suggest that yttrium oxynitr...}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Niu, D and Ashcraft, RW and Hinkle, C and Parsons, GN}, year={2004}, pages={445–451} }
 @article{hinkle_fulton_nemanich_lucovsky_2004, title={Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers}, volume={566}, ISSN={["1879-2758"]}, DOI={10.1016/j.susc.2004.06.084}, abstractNote={There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases in physical thickness proportional to K, and therefore would significantly reduce direct tunneling. However, increases in k to values of 15–25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to Si, EB, and the effective electron tunneling mass, meff, which mitigate gains from increased thickness. A novel technique, based on stacked dielectrics, is used to obtain the tunneling mass-conduction band offset energy product. When combined with optical measurements of tunneling barriers, this yields direct estimates of the tunneling mass.}, journal={SURFACE SCIENCE}, author={Hinkle, CL and Fulton, C and Nemanich, RJ and Lucovsky, G}, year={2004}, month={Sep}, pages={1185–1189} }
 @article{hinkle_fulton_nemanich_lucovsky_2004, title={Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers}, volume={234}, DOI={10.1016/j.apsusc.2004-05.076}, number={37990}, journal={Applied Surface Science}, author={Hinkle, C. L. and Fulton, C. and Nemanich, R. J. and Lucovsky, G.}, year={2004}, pages={240–245} }
 @article{soares_bastos_pezzi_miotti_driemeier_baumvol_hinkle_lucovsky_2004, title={Nitrogen bonding, stability, and transport in AlON films on Si}, volume={84}, ISSN={["0003-6951"]}, DOI={10.1063/1.1763230}, abstractNote={The chemical environment of N in nitrided aluminum oxide films on Si(001) was investigated by angle-resolved x-ray photoelectron spectroscopy. Two different bonding configurations were identified, namely N–Al and N–O–Al, suggesting the formation of the AlN and AlO2N compounds. The near-surface region is N-rich and AlN compounds therein are more abundant than AlO2N, whereas in bulk regions the proportions of these two compounds are comparable. Rapid thermal annealing at 1000 °C for 10 s in vacuum or in low-pressure oxygen atmosphere led to the breakage of N–Al bonds in AlN, releasing N and Al. The mobile N is partly lost by desorption from the surface and partly fixed by reacting with the network to form AlO2N. The released Al atoms, which remain immobile, react with oxygen from the film or from the gas phase. Characterization of the films outermost surfaces by low-energy ion scattering revealed that the migration of Si atoms from the substrate across the films, reaching the surface and being oxidized ther...}, number={24}, journal={APPLIED PHYSICS LETTERS}, author={Soares, GV and Bastos, KP and Pezzi, RP and Miotti, L and Driemeier, C and Baumvol, IJR and Hinkle, C and Lucovsky, G}, year={2004}, month={Jun}, pages={4992–4994} }
 @article{edge_schlom_brewer_chabal_williams_chambers_hinkle_lucovsky_yang_stemmer_et al._2004, title={Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon}, volume={84}, ISSN={["1077-3118"]}, DOI={10.1063/1.1759065}, abstractNote={Amorphous LaAlO3 thin films have been deposited by molecular beam deposition directly on silicon without detectable oxidation of the underlying substrate. We have studied these abrupt interfaces by Auger electron spectroscopy, high-resolution transmission electron microscopy, medium-energy ion scattering, transmission infrared absorption spectroscopy, and x-ray photoelectron spectroscopy. Together these techniques indicate that the films are fully oxidized and have less than 0.2 A of SiO2 at the interface between the amorphous LaAlO3 and silicon. These heterostructures are being investigated for alternative gate dielectric applications and provide an opportunity to control the interface between the silicon and the gate dielectric.}, number={23}, journal={APPLIED PHYSICS LETTERS}, author={Edge, LF and Schlom, DG and Brewer, RT and Chabal, YJ and Williams, JR and Chambers, SA and Hinkle, C and Lucovsky, G and Yang, Y and Stemmer, S and et al.}, year={2004}, month={Jun}, pages={4629–4631} }
 @article{bastos_pezzi_miotti_soares_driemeier_morais_baumvol_hinkle_lucovsky_2004, title={Thermal stability of plasma-nitrided aluminum oxide films on Si}, volume={84}, ISSN={["1077-3118"]}, DOI={10.1063/1.1638629}, abstractNote={The effect of post-deposition rapid thermal annealing in vacuum and in dry O2 on the stability of remote plasma-assisted nitrided aluminum oxide films on silicon is investigated. The areal densities of Al, O, N, and Si were determined by nuclear reaction analysis and their concentration versus depth distributions by narrow nuclear reaction resonance profiling, with subnanometric depth resolution. Annealing in both vacuum and O2 atmospheres produced partial loss of N from the near-surface regions of the films and its transport into near-interface regions of the Si substrate. Oxygen from the gas phase was incorporated in the AlON films in exchange for O and N previously existing therein, as well as in the near-interface regions of the Si substrate, leading to oxynitridation of the substrate. Al and Si remained essentially immobile under rapid thermal processing, confirming that the presence of nitrogen improves the thermal stability characteristics of the AlON/Si structures in comparison with non-nitrided A...}, number={1}, journal={APPLIED PHYSICS LETTERS}, author={Bastos, KP and Pezzi, RP and Miotti, L and Soares, GV and Driemeier, C and Morais, J and Baumvol, IJR and Hinkle, C and Lucovsky, G}, year={2004}, month={Jan}, pages={97–99} }
 @article{hinkle_lucovsky_2003, title={Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3}, volume={216}, ISSN={["0169-4332"]}, DOI={10.1016/S0169-4332(03)00499-9}, abstractNote={Remote plasma-assisted nitridation or RPN is demonstrated to be a processing pathway for nitridation of Zr and Hf silicate alloys, and for Al2O3, as well. The dependence of nitrogen incorporation on the process pressure is qualitatively similar to what has been reported for the plasma-assisted nitridation of SiO2, the lower the process pressure the greater the nitrogen incorporation in the film. The increased incorporation of nitrogen has been correlated with the penetration of the plasma-glow into the process chamber, and the accompanying increase in the concentration of N2+ ions that participate in the reactions leading to bulk incorporation. The nitrogen incorporation as been studied by Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS) and X-ray absorption spectroscopy (XAS).}, number={1-4}, journal={APPLIED SURFACE SCIENCE}, author={Hinkle, C and Lucovsky, G}, year={2003}, month={Jun}, pages={124–132} }
 @article{johnson_hong_hinkle_lucovsky_2002, title={Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices}, volume={46}, ISSN={["1879-2405"]}, DOI={10.1016/S0038-1101(02)00152-1}, abstractNote={Abstract The physical and electrical properties of non-crystalline Ta- and Hf-alumiunates, (Ta 2 O 5 ) x (Al 2 O 3 ) 1− x and (HfO 2 ) x (Al 2 O 3 ) 1− x , respectively, were studied. As-deposited films were homogeneous and pseudo-binary in character with increased thermal stability with respect to the respective end-member oxides. Capacitance–voltage and current density–voltage data as a function of temperature demonstrate that the Ta and Hf d-states of the alloys act as localized electron traps, and are at an energy approximately equal to the conduction band offset of Ta 2 O 5 and HfO 2 with respect to Si. This work correlates the studies of Ta- and Hf-aluminates to develop a qualitative conduction band energy level scheme for the two alloys where the interfacial electrical properties are dominated by electron traps of the respective transition metal atoms, and/or or network defects associated with the alloy.}, number={11}, journal={SOLID-STATE ELECTRONICS}, author={Johnson, RS and Hong, JG and Hinkle, C and Lucovsky, G}, year={2002}, month={Nov}, pages={1799–1805} }
 @article{johnson_hong_hinkle_lucovsky_2002, title={Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications}, volume={20}, number={3}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Johnson, R. S. and Hong, J. G. and Hinkle, C. and Lucovsky, G.}, year={2002}, pages={1126–1131} }