@misc{misra_shrivastava_chen_mathur_2010, title={Molecular memory devices including solid-state dielectric layers and related methods}, volume={7,642,546}, number={2010 Jan. 5}, author={Misra, V. and Shrivastava, R. and Chen, Z. and Mathur, G.}, year={2010} }
 @article{gowda_mathur_misra_2007, title={Valence band tunneling model for charge transfer of redox-active molecules attached to n- and p-silicon substrates}, volume={90}, DOI={10.1063/1.2720337}, number={14}, journal={Applied Physics Letters}, author={Gowda, S. and Mathur, G. and Misra, V.}, year={2007} }
 @article{gowda_mathur_li_surthi_misra_2006, title={Hybrid silicon/molecular FETs: A study of the interaction of redox-active molecules with silicon MOSFETs}, volume={5}, DOI={10.1109/TNANO.2006.874046}, number={3}, journal={IEEE Transactions on Nanotechnology}, author={Gowda, S. and Mathur, G. and Li, Q. L. and Surthi, S. and Misra, V.}, year={2006}, pages={258–264} }
 @article{gowda_mathur_li_surthi_misra_2005, title={Approach for investigating lateral conduction in self-assembled monolayers}, volume={87}, DOI={10.1063/1.2152112}, number={26}, journal={Applied Physics Letters}, author={Gowda, S. and Mathur, G. and Li, Q. and Surthi, S. and Misra, V.}, year={2005} }
 @misc{misra_gowda_mathur_2005, title={Hybrid molecular memory devices and methods of use thereof}, volume={6,958,485}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Misra, V. and Gowda, S. and Mathur, G.}, year={2005} }
 @article{mathur_gowda_li_surthi_zhao_misra_2005, title={Properties of functionalized redox-active monolayers on thin silicon dioxide - A study of the. dependence of retention time on oxide thickness}, volume={4}, DOI={10.1109/TNANO.2004.842056}, number={2}, journal={IEEE Transactions on Nanotechnology}, author={Mathur, G. and Gowda, S. and Li, Q. L. and Surthi, S. and Zhao, Q. and Misra, V.}, year={2005}, pages={278–283} }
 @article{zhao_luo_surthi_li_mathur_gowda_larson_johnson_misra_2005, title={Redox-active monolayers on nano-scale silicon electrodes}, volume={16}, DOI={10.1088/0957-4484/16/2/013}, number={2}, journal={Nanotechnology}, author={Zhao, Q. and Luo, Y. and Surthi, S. and Li, Q. L. and Mathur, G. and Gowda, S. and Larson, P. R. and Johnson, M. B. and Misra, V.}, year={2005}, pages={257–261} }
 @article{li_mathur_gowda_surthi_zhao_yu_lindsey_bocian_misra_2004, title={Multibit memory using self-assembly of mixed ferrocene/porphyrin monolayers on silicon}, volume={16}, DOI={10.1002/adma.200305680}, number={2}, journal={Advanced Materials}, author={Li, Q. L. and Mathur, G. and Gowda, S. and Surthi, S. and Zhao, Q. and Yu, L. H. and Lindsey, J. S. and Bocian, D. F. and Misra, V.}, year={2004}, pages={133-} }
 @article{li_surthi_mathur_gowda_zhao_sorenson_tenent_muthukumaran_lindsey_misra_2004, title={Multiple-bit storage properties of porphyrin monolayers on SiO2}, volume={85}, DOI={10.1063/1.1782254}, number={10}, journal={Applied Physics Letters}, author={Li, Q. L. and Surthi, S. and Mathur, G. and Gowda, S. and Zhao, Q. and Sorenson, T. A. and Tenent, R. C. and Muthukumaran, K. and Lindsey, J. S. and Misra, V.}, year={2004}, pages={1829–1831} }
 @article{muthukumaran_loewe_ambroise_tamaru_li_mathur_bocian_misra_lindsey_2004, title={Porphyrins bearing arylphosphonic acid tethers for attachment to oxide surfaces}, volume={69}, DOI={10.1021/jo034945l}, number={5}, journal={Journal of Organic Chemistry}, author={Muthukumaran, K. and Loewe, R. S. and Ambroise, A. and Tamaru, S. I. and Li, Q. L. and Mathur, G. and Bocian, D. F. and Misra, V. and Lindsey, J. S.}, year={2004}, pages={1444–1452} }
 @article{loewe_ambroise_muthukumaran_padmaja_lysenko_mathur_li_bocian_misra_lindsey_2004, title={Porphyrins bearing mono or tripodal benzylphosphonic acid tethers for attachment to oxide surfaces}, volume={69}, DOI={10.1021/jo034946d}, number={5}, journal={Journal of Organic Chemistry}, author={Loewe, R. S. and Ambroise, A. and Muthukumaran, K. and Padmaja, K. and Lysenko, A. B. and Mathur, G. and Li, Q. L. and Bocian, D. F. and Misra, V. and Lindsey, J. S.}, year={2004}, pages={1453–1460} }
 @article{li_surthi_mathur_gowda_misra_sorenson_tenent_kuhr_tamaru_lindsey_et al._2003, title={Electrical characterization of redox-active molecular monolayers on SiO2 for memory applications}, volume={83}, DOI={10.1063/1.1584088}, number={1}, journal={Applied Physics Letters}, author={Li, Q. L. and Surthi, S. and Mathur, G. and Gowda, S. and Misra, V. and Sorenson, T. A. and Tenent, R. C. and Kuhr, W. G. and Tamaru, S. and Lindsey, J. S. and et al.}, year={2003}, pages={198–200} }
 @article{li_mathur_homsi_surthi_misra_malinovskii_schweikart_yu_lindsey_liu_et al._2002, title={Capacitance and conductance characterization of ferrocene- containing self-assembled monolayers on silicon surfaces for memory applications}, volume={81}, DOI={10.1063/1.1500781}, number={8}, journal={Applied Physics Letters}, author={Li, Q. L. and Mathur, G. and Homsi, M. and Surthi, S. and Misra, V. and Malinovskii, V. and Schweikart, K. H. and Yu, L. H. and Lindsey, J. S. and Liu, Z. M. and et al.}, year={2002}, pages={1494–1496} }