Works (26)

2008 journal article

Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si stacks

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 26(1), 232–243.

By: Y. Strzhemechny, M. Bataiev, S. Tumakha, S. Goss, C. Hinkle, C. Fulton, G. Lucovsky, L. Brillson

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Local bonding analysis of the valence and conduction band features of TiO2

JOURNAL OF APPLIED PHYSICS, 102(3).

By: I. Fleming, C. Fulton, G. Lucovsky, J. Rowe, M. Ulrich & J. Luening

Source: Web Of Science
Added: August 6, 2018

2006 article

"Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy" (vol 99, pg 023519, 2006)

Zeman, M. C., Fulton, C. C., Lucovsky, G., Nemanich, R. J., & Yang, W. C. (2006, May 15). JOURNAL OF APPLIED PHYSICS, Vol. 99.

Source: Web Of Science
Added: August 6, 2018

2006 journal article

Electronic properties of the Zr-ZrO2-SiO2-Si(100) gate stack structure

JOURNAL OF APPLIED PHYSICS, 99(6).

By: C. Fulton, G. Lucovsky & R. Nemanich

Source: Web Of Science
Added: August 6, 2018

2006 article

Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2

Lucovsky, G., Hinkle, C. L., Fulton, C. C., Stoute, N. A., Seo, H., & Luning, J. (2006, November). RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 2097–2101.

By: G. Lucovsky, C. Hinkle n, C. Fulton, N. Stoute, H. Seo & J. Luning*

author keywords: X-ray absorption spectra; transition metal oxides; X-ray absorption spectra; Jahn-Teller splittings; conduction band edge states; grain-boundary defect states; oxygen atom vacancies; interfacial traps
Source: Web Of Science
Added: August 6, 2018

2006 article

Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3

Lucovsky, G., Fulton, C. C., Ju, B. S., Stoute, N. A., Tao, S., Aspnes, D. E., & Luening, J. (2006, November). RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1591–1595.

By: G. Lucovsky, C. Fulton, B. Ju, N. Stoute, S. Tao n, D. Aspnes, J. Luening

author keywords: x-ray absorption spectra; x-ray absorption spectroscopy; Jahn-Teller term-spit states; Zr silicate alloys; cubic zirconia and hafnia
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy

JOURNAL OF APPLIED PHYSICS, 99(2).

Source: Web Of Science
Added: August 6, 2018

2005 article

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

MICROELECTRONICS RELIABILITY, Vol. 45, pp. 827–830.

By: G. Lucovsky, J. Hong, C. Fulton, N. Stoute n, Y. Zou n, R. Nemanich, D. Aspnes, H. Ade, D. Schlom*

Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 article

Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings

Lucovsky, G., Fulton, C. C., Zhang, Y., Luning, J., Edge, L., Whitten, J. L., … Afanase'v, VV. (2005, August 22). THIN SOLID FILMS, Vol. 486, pp. 129–135.

By: G. Lucovsky, C. Fulton, Y. Zhang, J. Luning*, L. Edge*, J. Whitten, R. Nemanich, D. Schlom*, . Afanase'v*

author keywords: transition metal/rare earth oxides; complex oxides; band edge d-states; Jahn-Teller term splittings; localized band edge states; bulk trapping
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 5(1), 65–83.

By: G. Lucovsky, C. Fulton, Y. Zhang, Y. Zou, J. Luning*, L. Edge*, J. Whitten, R. Nemanich ...

author keywords: complex oxides; conduction band edge states; d-state degeneracy; high-k dielectrics; Jahn-Teller splittings; photoconductivity; spectroscopic ellipsometry; x-ray absorption spectroscopy
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 article

Final state effects in VUV and soft X-ray absorption spectra of transition metal oxides and silicate alloys: comparisons between experiment and ab initio calculations

Lucovsky, G., Zhang, Y., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., & Whitten, J. L. (2005, June). JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, Vol. 144, pp. 917–919.

author keywords: transition metal oxides; x-ray absorption spectra; intra- and inter-atomic transitions; spectroscopic ellipsometry
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n-type ZnO{0001} surfaces

JOURNAL OF APPLIED PHYSICS, 97(10).

Source: Web Of Science
Added: August 6, 2018

2005 article

Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)(x)(TiOx)(1-x) and other complex oxides

Fulton, C. C., Lucovsky, G., Zhang, Y., Zou, Y., Nemanich, R. J., Ade, H., & Whitten, J. L. (2005, June). JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, Vol. 144, pp. 913–916.

author keywords: complex oxides; x-ray absorption spectra; spectroscopic ellipsometry; d-State coupling; band gap engineering
Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 article

A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 257–262.

By: C. Hinkle, C. Fulton, R. Nemanich & G. Lucovsky

author keywords: high-K dielectrics; direct tunneling; tunneling mass-conduction band offset energy product; stacked gate dielectrics
Source: Web Of Science
Added: August 6, 2018

2004 article

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, September 20). SURFACE SCIENCE, Vol. 566, pp. 1185–1189.

By: C. Hinkle, C. Fulton, R. Nemanich & G. Lucovsky

author keywords: dielectric phenomena; tunneling; metal-oxide semiconductor (MOS) structures; surface electronic phenomena (work function, surface potential, surface states etc.)
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers

Applied Surface Science, 234(37990), 240–245.

By: C. Hinkle, C. Fulton, R. Nemanich & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces

JOURNAL OF APPLIED PHYSICS, 95(10), 5856–5864.

Source: Web Of Science
Added: August 6, 2018

2004 journal article

Interface instabilities and electronic properties of ZrO2 on silicon (100)

JOURNAL OF APPLIED PHYSICS, 96(5), 2665–2673.

By: C. Fulton, T. Cook, G. Lucovsky & R. Nemanich

Source: Web Of Science
Added: August 6, 2018

2004 journal article

Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100)

APPLIED PHYSICS LETTERS, 84(4), 580–582.

By: C. Fulton, G. Lucovsky & R. Nemanich

Source: Web Of Science
Added: August 6, 2018

2004 article

Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides

Lucovsky, G., Hong, J. G., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., … Freeouf, J. L. (2004, August). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 241, pp. 2221–2235.

By: G. Lucovsky, J. Hong, C. Fulton, Y. Zou n, R. Nemanich, H. Ade, D. Scholm*, J. Freeouf*

Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 article

X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 22, pp. 2132–2138.

By: G. Lucovsky, J. Hong, C. Fulton, Y. Zou n, R. Nemanich & H. Ade

Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Band offset measurements of the GaN (0001)/HfO2 interface

Journal of Applied Physics, 94(11), 7155–7158.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Band offset measurements of the Si3N4/GaN (0001) interface

JOURNAL OF APPLIED PHYSICS, 94(6), 3949–3954.

Source: Web Of Science
Added: August 6, 2018

2003 article

Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices

Lucovsky, G., Raynor, G. B., Zhang, Y., Fulton, C. C., Nemanich, R. J., Appel, G., … Whitten, J. L. (2003, May 15). APPLIED SURFACE SCIENCE, Vol. 212, pp. 563–569.

By: G. Lucovsky, G. Raynor, Y. Zhang, C. Fulton, R. Nemanich, G. Appel, H. Ade, J. Whitten

author keywords: ab initio quantum chemical calculations; plasma processing; Auger electron spectroscopy; X-ray photoelectron spectroscopy; X-ray absorption spectroscopy; zirconium silicate alloys; semiconductor-insulator interfaces
Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004.

Source: Web Of Science
Added: August 6, 2018

2002 article

Electronic states at the interface of Ti-Si oxide on Si(100)

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 1726–1731.

By: C. Fulton, G. Lucovsky & R. Nemanich

Source: Web Of Science
Added: August 6, 2018