Charles C. Fulton

Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si stacks

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 26(1), 232–243.

Local bonding analysis of the valence and conduction band features of TiO2

Journal of Applied Physics, 102(3).

Suppression of Jahn-Teller term-split band edge states in the X-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3 (vol 75, pg 1591, 2006)

Radiation Physics and Chemistry, Vol. 76, p. 907.

Electronic properties of the Zr-ZrO2-SiO2-Si(100) gate stack structure

Journal of Applied Physics, 99(6).

Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2

Radiation Physics and Chemistry, 75(11), 2097–2101.

Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy

Journal of Applied Physics, 99(2).

Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy (vol 99, pg 023519, 2006)

Journal of Applied Physics, Vol. 99.

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

Microelectronics Reliability, 45(06-May), 827–830.

Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings

Thin Solid Films, 486(02-Jan), 129–135.

Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect

IEEE Transactions on Device and Materials Reliability, 5(1), 65–83.

Final state effects in VUV and soft X-ray absorption spectra of transition metal oxides and silicate alloys: comparisons between experiment and ab initio calculations

Journal of Electron Spectroscopy and Related Phenomena, 144, 917–919.

Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n-type ZnO{0001} surfaces

Journal of Applied Physics, 97(10).

Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)(x)(TiOx)(1-x) and other complex oxides

Journal of Electron Spectroscopy and Related Phenomena, 144, 913–916.

A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

Microelectronic Engineering, 72(04-Jan), 257–262.

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers

Surface Science, 566(Sep 20 2004), 1185–1189.

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers

Applied Surface Science, 234(37990), 240–245.

In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces

Journal of Applied Physics, 95(10), 5856–5864.

Interface instabilities and electronic properties of ZrO2 on silicon (100)

Journal of Applied Physics, 96(5), 2665–2673.

Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100)

Applied Physics Letters, 84(4), 580–582.

Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides

Physica Status Solidi. B, Basic Solid State Physics, 241(10), 2221–2235.

X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2132–2138.

Band offset measurements of the GaN (0001)/HfO2 interface

Journal of Applied Physics, 94(11), 7155–7158.

Band offset measurements of the Si3N4/GaN (0001) interface

Journal of Applied Physics, 94(6), 3949–3954.

Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices

Applied Surface Science, 212(2003 May 15), 563–569.

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

Journal of Applied Physics, 93(7), 3995–4004.

Electronic states at the interface of Ti-Si oxide on Si(100)

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1726–1731.