2008 journal article
Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si stacks
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 26(1), 232–243.
2007 journal article
Local bonding analysis of the valence and conduction band features of TiO2
Journal of Applied Physics, 102(3).
2007 article
Suppression of Jahn-Teller term-split band edge states in the X-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3 (vol 75, pg 1591, 2006)
Radiation Physics and Chemistry, Vol. 76, p. 907.
2006 journal article
Electronic properties of the Zr-ZrO2-SiO2-Si(100) gate stack structure
Journal of Applied Physics, 99(6).
2006 journal article
Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2
Radiation Physics and Chemistry, 75(11), 2097–2101.
2006 journal article
Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy
Journal of Applied Physics, 99(2).
2006 article
Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy (vol 99, pg 023519, 2006)
Journal of Applied Physics, Vol. 99.
2005 journal article
Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra
Microelectronics Reliability, 45(06-May), 827–830.
2005 journal article
Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings
Thin Solid Films, 486(02-Jan), 129–135.
2005 journal article
Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect
IEEE Transactions on Device and Materials Reliability, 5(1), 65–83.
2005 journal article
Final state effects in VUV and soft X-ray absorption spectra of transition metal oxides and silicate alloys: comparisons between experiment and ab initio calculations
Journal of Electron Spectroscopy and Related Phenomena, 144, 917–919.
2005 journal article
Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n-type ZnO{0001} surfaces
Journal of Applied Physics, 97(10).
2005 journal article
Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)(x)(TiOx)(1-x) and other complex oxides
Journal of Electron Spectroscopy and Related Phenomena, 144, 913–916.
2004 journal article
A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices
Microelectronic Engineering, 72(04-Jan), 257–262.
2004 journal article
Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers
Surface Science, 566(Sep 20 2004), 1185–1189.
2004 journal article
Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers
Applied Surface Science, 234(37990), 240–245.
2004 journal article
In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces
Journal of Applied Physics, 95(10), 5856–5864.
2004 journal article
Interface instabilities and electronic properties of ZrO2 on silicon (100)
Journal of Applied Physics, 96(5), 2665–2673.
2004 journal article
Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100)
Applied Physics Letters, 84(4), 580–582.
2004 journal article
Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides
Physica Status Solidi. B, Basic Solid State Physics, 241(10), 2221–2235.
2004 journal article
X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2132–2138.
2003 journal article
Band offset measurements of the GaN (0001)/HfO2 interface
Journal of Applied Physics, 94(11), 7155–7158.
2003 journal article
Band offset measurements of the Si3N4/GaN (0001) interface
Journal of Applied Physics, 94(6), 3949–3954.
2003 journal article
Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices
Applied Surface Science, 212(2003 May 15), 563–569.
2003 journal article
Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)
Journal of Applied Physics, 93(7), 3995–4004.
2002 journal article
Electronic states at the interface of Ti-Si oxide on Si(100)
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1726–1731.