@article{smith_mclean_smith_davis_2004, title={Homoepitaxial growth of (0001)- and (000(1)over-bar)-oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization}, volume={265}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2004.02.096}, abstractNote={Homoepitaxial ZnO films have been grown via metalorganic vapor-phase epitaxy on O- and Zn-terminated basal-plane-oriented ZnO substrates. Maps of on-axis X-ray rocking curves obtained over 2-in-diameter ZnO{0 0 0 1} wafers, diced from boules produced by vapor phase transport, revealed well-defined areas that ranged from <50 to >1050 arcsec FWHM, indicating the presence of tilted domains. This macrostructure was manifested in all the homoepitaxial ZnO films deposited on these wafers. The films grown on O-terminated ZnO surfaces were initially dense. However, they changed to a textured polycrystalline microstructure after ≈100 nm and possessed a surface roughness of 7.3 nm. By contrast, the films grown on the Zn-terminated surface under the same conditions were fully dense, without texture and appeared to be monocrystalline with a significantly improved surface roughness of 3.4 nm. Cross-sectional transmission electron microscopy of the wafers revealed high densities of edge dislocations and stacking faults with associated Frank partial dislocations.}, number={3-4}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Smith, TP and McLean, H and Smith, DJ and Davis, RF}, year={2004}, month={May}, pages={390–398} }
 @article{preble_mclean_kiesel_miraglia_albrecht_davis_2002, title={Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiG-based, cross-sectional TEM samples}, volume={92}, ISSN={["0304-3991"]}, DOI={10.1016/S0304-3991(02)00142-0}, abstractNote={Reflected light optical microscopy using a Nomarski prism and a differential interference contrast filter have been employed in concert to achieve a technique that provides an accurate color reference for thickness during the dimpling and ion milling of transparent transmission electron microscopy samples of 6H-SiC(000 1) wafers. The samples had thin films of AIN, GaN, and Au deposited on the SiC substrate. A sequence of variously colored primary and secondary interference bands was observed when the SiC was thinner than 20 microm using an optical microscope. The color bands were correlated with the TEM sample thickness as measured via scanning electron microscopy. The interference contrast was used to provide an indication of the dimpling rate, the ion milling rate, and also the most probable location of perforation, which are useful to reduce sample breakage. The application of pressure during the initial cross-sectional preparation reduced the separation of the two halves of the sample sandwich and resulted in increased shielding of the film surface from ion milling damage.}, number={3-4}, journal={ULTRAMICROSCOPY}, author={Preble, EA and McLean, HA and Kiesel, SM and Miraglia, P and Albrecht, M and Davis, RF}, year={2002}, month={Aug}, pages={265–271} }