Irina Konstantinova Shmagin

Growth and characterization of GaN single crystals

JOURNAL OF CRYSTAL GROWTH, 208(1-4), 100–106.

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 86(1), 281–288.

Optical information storage systems and methods using heterostructures comprising ternary group III-V nitride semiconductor materials

Washington, DC: U.S. Patent and Trademark Office.

Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997, 231–234. Bristol; Philadelphia: Institute of Physics Pub.

Optical metastability in InGaN/GaN heterostructures

Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997, 375–378. Bristol; Philadelphia: Institute of Physics Pub.

Optical properties of wide bandgap II-V nitride semiconductors

In M. Zhang & K. N. Tu (Eds.), 1998 5th International Conference on Solid-State and Integrated Circuit Technology: Proceedings, October 21-23, 1998, Beijing, China (pp. 609–612).

Visible-blind GaN Schottky barrier detectors grown on Si(111)

APPLIED PHYSICS LETTERS, 72(5), 551–553.

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

APPLIED PHYSICS LETTERS, 71(18), 2572–2574.

Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition

Keller, S., Keller, B. P., Kapolnek, D., Mishra, U. K., DenBaars, S. P., Shmagin, I. K., … Krishnankutty, S. (1997, January). JOURNAL OF CRYSTAL GROWTH, Vol. 170, pp. 349–352.

Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration

JOURNAL OF APPLIED PHYSICS, 81(4), 2021–2023.

Optical data storage in InGaN/GaN heterostructures

APPLIED PHYSICS LETTERS, 71(10), 1382–1384.

Optical metastability in bulk GaN single crystals

APPLIED PHYSICS LETTERS, 71(4), 455–457.

Photoluminescence characteristics of GaN/InGaN/GaN quantum wells

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Krishnankutty, S., Keller, S., Abare, A. C., … DenBaars, S. P. (1997, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 26, pp. 325–329.

Photoluminescence from mechanically milled Si and SiO2 powders

PHYSICAL REVIEW B, 55(12), 7615–7623.

Reconfigurable optical properties in InGaN/GaN quantum wells

APPLIED PHYSICS LETTERS, 71(11), 1455–1457.

Growth of bulk AIN and GaN single crystals by sublimation

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 41–46. Pittsburgh, Pa.: Materials Research Society.

Stimulated emission and gain measurements from InGaN/GaN heterostructures

In III-V nitrides: Symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.(Materials Research Society symposia proceedings ; v. 449) (pp. 1209–1214). Pittsburgh, Pa.: Materials Research Society.