Irina Konstantinova Shmagin

Works (17)

Updated: July 5th, 2023 16:04

2000 journal article

Growth and characterization of GaN single crystals

JOURNAL OF CRYSTAL GROWTH, 208(1-4), 100–106.

By: C. Balkas n, Z. Sitar n, L. Bergman n, I. Shmagin n, J. Muth n, R. Kolbas n, R. Nemanich n, R. Davis n

co-author countries: United States of America 🇺🇸
author keywords: gallium nitride; crystal growth; vapor transport; photoluminescence; optical absorption
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 86(1), 281–288.

By: V. Joshkin n, C. Parker n, S. Bedair n, J. Muth n, I. Shmagin n, R. Kolbas n, E. Piner n, R. Molnar*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 patent

Optical information storage systems and methods using heterostructures comprising ternary group III-V nitride semiconductor materials

Washington, DC: U.S. Patent and Trademark Office.

By: I. Shmagin, J. Muth & R. Kolbas

Source: NC State University Libraries
Added: August 6, 2018

1998 conference paper

Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997, 231–234. Bristol; Philadelphia: Institute of Physics Pub.

By: R. Dupuis, P. Grudowski, C. Eiting, I. Shmagin, R. Kolbas & S. Rosner

Source: NC State University Libraries
Added: August 6, 2018

1998 conference paper

Optical metastability in InGaN/GaN heterostructures

Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997, 375–378. Bristol; Philadelphia: Institute of Physics Pub.

By: I. Shmagin, J. Muth, R. Kolbas, R. Dupuis, P. Grudowski, C. Eiting, J. Park, B. Shelton, D. Lambert

Source: NC State University Libraries
Added: August 6, 2018

1998 conference paper

Optical properties of wide bandgap II-V nitride semiconductors

In M. Zhang & K. N. Tu (Eds.), 1998 5th International Conference on Solid-State and Integrated Circuit Technology: Proceedings, October 21-23, 1998, Beijing, China (pp. 609–612).

By: R. Kolbas, I. Shmagin & J. Muth

Ed(s): . M. Zhang & K. Tu

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Visible-blind GaN Schottky barrier detectors grown on Si(111)

APPLIED PHYSICS LETTERS, 72(5), 551–553.

By: A. Osinsky*, S. Gangopadhyay*, J. Yang*, R. Gaska*, D. Kuksenkov*, H. Temkin*, I. Shmagin n, Y. Chang n, J. Muth n, R. Kolbas n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

APPLIED PHYSICS LETTERS, 71(18), 2572–2574.

By: J. Muth n, J. Lee n, I. Shmagin n, R. Kolbas n, H. Casey*, B. Keller*, U. Mishra*, S. DenBaars*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 article

Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition

Keller, S., Keller, B. P., Kapolnek, D., Mishra, U. K., DenBaars, S. P., Shmagin, I. K., … Krishnankutty, S. (1997, January). JOURNAL OF CRYSTAL GROWTH, Vol. 170, pp. 349–352.

By: S. Keller*, B. Keller*, D. Kapolnek*, U. Mishra*, S. DenBaars*, I. Shmagin n, R. Kolbas n, S. Krishnankutty n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration

JOURNAL OF APPLIED PHYSICS, 81(4), 2021–2023.

By: I. Shmagin n, J. Muth n, R. Kolbas n, S. Krishnankutty n, S. Keller*, U. Mishra*, S. DenBaars*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Optical data storage in InGaN/GaN heterostructures

APPLIED PHYSICS LETTERS, 71(10), 1382–1384.

By: I. Shmagin n, J. Muth n, R. Kolbas n, R. Dupuis*, P. Grudowski*, C. Eiting*, J. Park*, B. Shelton*, D. Lambert*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Optical metastability in bulk GaN single crystals

APPLIED PHYSICS LETTERS, 71(4), 455–457.

By: I. Shmagin n, J. Muth n, J. Lee n, R. Kolbas n, C. Balkas n, Z. Sitar n, R. Davis n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 article

Photoluminescence characteristics of GaN/InGaN/GaN quantum wells

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Krishnankutty, S., Keller, S., Abare, A. C., … DenBaars, S. P. (1997, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 26, pp. 325–329.

By: I. Shmagin n, J. Muth n, R. Kolbas n, S. Krishnankutty n, S. Keller*, A. Abare*, L. Coldren*, U. Mishra*, S. DenBaars*

co-author countries: United States of America 🇺🇸
author keywords: GaN/InGaN; photoluminescence (PL); quantum wells (QWs)
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Photoluminescence from mechanically milled Si and SiO2 powders

PHYSICAL REVIEW B, 55(12), 7615–7623.

By: T. Shen n, I. Shmagin n, C. Koch n, R. Kolbas n, Y. Fahmy n, L. Bergman n, R. Nemanich n, M. McClure n, Z. Sitar n, M. Quan n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Reconfigurable optical properties in InGaN/GaN quantum wells

APPLIED PHYSICS LETTERS, 71(11), 1455–1457.

By: I. Shmagin n, J. Muth n, R. Kolbas n, M. Mack*, A. Abare*, S. Keller*, L. Coldren*, U. Mishra*, S. DenBaars*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1996 conference paper

Growth of bulk AIN and GaN single crystals by sublimation

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 41–46. Pittsburgh, Pa.: Materials Research Society.

By: C. Balkas, Z. Sitar, T. Zheleva, L. Bergman, I. Shmagin, J. Muth, R. Kolbas, R. Nemanich, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1996 chapter

Stimulated emission and gain measurements from InGaN/GaN heterostructures

In III-V nitrides: Symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.(Materials Research Society symposia proceedings ; v. 449) (pp. 1209–1214). Pittsburgh, Pa.: Materials Research Society.

By: I. Shmagin, J. Muth, R. Kolbas, S. Krishnankkutty, S. Keller, U. Mishra, S. DenBaars

Source: NC State University Libraries
Added: August 6, 2018

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