Irina Konstantinova Shmagin

Works (17)

Updated: February 10th, 2025 14:29

2000 article

Growth and characterization of GaN single crystals

Balkaş, C. M., Sitar, Z., Bergman, L., Shmagin, I. K., Muth, J. F., Kolbas, R., … Davis, R. F. (2000, January 1). Journal of Crystal Growth.

By: C. Balkaş n, Z. Sitar n, L. Bergman n, I. Shmagin n, J. Muth n , R. Kolbas n, R. Nemanich n, R. Davis n

author keywords: gallium nitride; crystal growth; vapor transport; photoluminescence; optical absorption
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

1999 article

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

Joshkin, V. A., Parker, C. A., Bedair, S. M., Muth, J. F., Shmagin, I. K., Kolbas, R. M., … Molnar, R. J. (1999, July 1). Journal of Applied Physics.

By: V. Joshkin n, C. Parker n, S. Bedair n, J. Muth n , I. Shmagin n, R. Kolbas n, E. Piner n, R. Molnar *

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

1999 patent

Optical information storage systems and methods using heterostructures comprising ternary group III-V nitride semiconductor materials

Washington, DC: U.S. Patent and Trademark Office.

By: I. Shmagin, J. Muth  & R. Kolbas

Source: NC State University Libraries
Added: August 6, 2018

1998 conference paper

Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997, 231–234. Bristol; Philadelphia: Institute of Physics Pub.

By: R. Dupuis, P. Grudowski, C. Eiting, I. Shmagin, R. Kolbas & S. Rosner

Source: NC State University Libraries
Added: August 6, 2018

1998 conference paper

Optical metastability in InGaN/GaN heterostructures

Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997, 375–378. Bristol; Philadelphia: Institute of Physics Pub.

By: I. Shmagin, J. Muth , R. Kolbas, R. Dupuis, P. Grudowski, C. Eiting, J. Park, B. Shelton, D. Lambert

Source: NC State University Libraries
Added: August 6, 2018

1998 conference paper

Optical properties of wide bandgap II-V nitride semiconductors

In M. Zhang & K. N. Tu (Eds.), 1998 5th International Conference on Solid-State and Integrated Circuit Technology: Proceedings, October 21-23, 1998, Beijing, China (pp. 609–612).

By: R. Kolbas, I. Shmagin & J. Muth 

Ed(s): . M. Zhang & K. Tu

Source: NC State University Libraries
Added: August 6, 2018

1998 article

Visible-blind GaN Schottky barrier detectors grown on Si(111)

Osinsky, A., Gangopadhyay, S., Yang, J. W., Gaska, R., Kuksenkov, D., Temkin, H., … Kolbas, R. M. (1998, February 2). Applied Physics Letters.

By: A. Osinsky *, S. Gangopadhyay *, J. Yang *, R. Gaska*, D. Kuksenkov*, H. Temkin*, I. Shmagin n, Y. Chang  n, J. Muth n , R. Kolbas n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

1997 article

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

Muth, J. F., Lee, J. H., Shmagin, I. K., Kolbas, R. M., Casey, H. C., Keller, B. P., … DenBaars, S. P. (1997, November 3). Applied Physics Letters.

By: J. Muth n , J. Lee n, I. Shmagin n, R. Kolbas n, H. Casey*, B. Keller*, U. Mishra *, S. DenBaars *

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 article

Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition

Keller, S., Keller, B. P., Kapolnek, D., Mishra, U. K., DenBaars, S. P., Shmagin, I. K., … Krishnankutty, S. (1997, January 1). Journal of Crystal Growth.

By: S. Keller *, B. Keller*, D. Kapolnek*, U. Mishra *, S. DenBaars *, I. Shmagin n, R. Kolbas n, S. Krishnankutty n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Metal and Thin Film Mechanics
Source: Web Of Science
Added: August 6, 2018

1997 article

Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Krishnankutty, S., Keller, S., Mishra, U. K., & DenBaars, S. P. (1997, February 15). Journal of Applied Physics.

By: I. Shmagin n, J. Muth n , R. Kolbas n, S. Krishnankutty n, S. Keller *, U. Mishra *, S. DenBaars *

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Acoustic Wave Resonator Technologies
Source: Web Of Science
Added: August 6, 2018

1997 article

Optical data storage in InGaN/GaN heterostructures

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Dupuis, R. D., Grudowski, P. A., Eiting, C. J., … Lambert, D. J. H. (1997, September 8). Applied Physics Letters.

By: I. Shmagin n, J. Muth n , R. Kolbas n, R. Dupuis *, P. Grudowski *, C. Eiting*, J. Park *, B. Shelton*, D. Lambert *

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 article

Optical metastability in bulk GaN single crystals

Shmagin, I. K., Muth, J. F., Lee, J. H., Kolbas, R. M., Balkas, C. M., Sitar, Z., & Davis, R. F. (1997, July 28). Applied Physics Letters.

By: I. Shmagin n, J. Muth n , J. Lee n, R. Kolbas n, C. Balkas n, Z. Sitar n, R. Davis n

topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

1997 article

Photoluminescence characteristics of GaN/lnGaN/GaN quantum wells

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Krishnankutty, S., Keller, S., Abare, A. C., … Baars, S. P. D. (1997, March 1). Journal of Electronic Materials.

By: I. Shmagin n, J. Muth n , R. Kolbas n, S. Krishnankutty n, S. Keller *, A. Abare*, L. Coldren *, U. Mishra *, S. Baars*

author keywords: GaN/InGaN; photoluminescence (PL); quantum wells (QWs)
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 article

Photoluminescence from mechanically milled Si andSiO2spowders

Shen, T. D., Shmagin, I., Koch, C. C., Kolbas, R. M., Fahmy, Y., Bergman, L., … Quan, M. X. (1997, March 15). Physical Review. B, Condensed Matter.

By: T. Shen n, I. Shmagin n, C. Koch n, R. Kolbas n, Y. Fahmy n, L. Bergman n, R. Nemanich n, M. McClure n, Z. Sitar n, M. Quan n

topics (OpenAlex): Silicon Nanostructures and Photoluminescence; Semiconductor materials and devices; Ion-surface interactions and analysis
Source: Web Of Science
Added: August 6, 2018

1997 article

Reconfigurable optical properties in InGaN/GaN quantum wells

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Mack, M. P., Abare, A. C., Keller, S., … DenBaars, S. P. (1997, September 15). Applied Physics Letters.

By: I. Shmagin n, J. Muth n , R. Kolbas n, M. Mack*, A. Abare*, S. Keller*, L. Coldren*, U. Mishra *, S. DenBaars *

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

1996 conference paper

Growth of bulk AIN and GaN single crystals by sublimation

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 41–46. Pittsburgh, Pa.: Materials Research Society.

By: C. Balkas, Z. Sitar, T. Zheleva, L. Bergman, I. Shmagin, J. Muth , R. Kolbas, R. Nemanich, R. Davis

Ed(s):

Source: NC State University Libraries
Added: August 6, 2018

1996 chapter

Stimulated emission and gain measurements from InGaN/GaN heterostructures

In III-V nitrides: Symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.(Materials Research Society symposia proceedings ; v. 449) (pp. 1209–1214). Pittsburgh, Pa.: Materials Research Society.

By: I. Shmagin, J. Muth , R. Kolbas, S. Krishnankkutty, S. Keller, U. Mishra, S. DenBaars

Ed(s):

Source: NC State University Libraries
Added: August 6, 2018

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