@article{narayan_pant_chugh_choi_fan_2006, title={Characteristics of nucleation layer and epitaxy in GaN/sapphire heterostructures}, volume={99}, number={5}, journal={Journal of Applied Physics}, author={Narayan, J. and Pant, P. and Chugh, A. and Choi, H. and Fan, J. C. C.}, year={2006} }
 @article{chugh_ramachandran_tiwari_narayan_2006, title={Epitaxial ZnO/Pt layered structures and ZnO-Pt nanodot composites on sapphire (0001)}, volume={35}, ISSN={["1543-186X"]}, DOI={10.1007/BF02692537}, number={5}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Chugh, Amit and Ramachandran, S. and Tiwari, A. and Narayan, J.}, year={2006}, month={May}, pages={840–845} }
 @article{ramachandran_chugh_tiwari_narayan_2006, title={Growth of highly conducting epitaxial ZnO-Pt-ZnO heterostructure on alpha-Al2O3 (0001)}, volume={291}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2006.02.010}, abstractNote={Here we report the growth of epitaxial ZnO–Pt–ZnO trilayer structures on sapphire (0 0 0 1) substrate by using pulsed laser deposition technique. These structures were characterized using X-ray diffraction, conventional and high-resolution transmission electron microscopy, STEM (scanning Transmission Electron microscopy-Atomic number) Z-contrast, optical transmittance and electrical resistivity measurements. X-ray diffraction and TEM experiments revealed the epitaxial nature of these structures, the orientation relationship being: 〈1 1 1〉pt||〈0 0 0 1〉ZnO||〈0 0 0 1〉〈0 0 0 1〉sapphire (out of plane) and 〈1 1 0〉pt||〈2 1¯ 1¯ 0〉ZnO||〈0 1 1¯ 0〉sapphire (in Plane) for the trilayer structure. Electrical and optical measurements showed that these heterostructures exhibit quite good electrical conductivity and at the same time possess moderate optical transmittance.}, number={1}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Ramachandran, S. and Chugh, A. and Tiwari, A. and Narayan, J.}, year={2006}, month={May}, pages={212–217} }
 @article{chugh_tiwari_kvit_narayan_2003, title={A novel technique for making self-encapsulated and self-aligned copper films}, volume={103}, ISSN={["0921-5107"]}, DOI={10.1016/s0921-5107(03)00148-x}, abstractNote={We provide a method to grow self-aligned epitaxial MgO/Cu/MgO films on silicon substrates by pulsed laser deposition (PLD) technique. Here, a thin layer of Cu/Mg (Mg 5%) is deposited using a PLD over Si (100) specimens, followed by annealing at 500 °C in a controlled oxygen environment resulting in the segregation of Mg on either side of the copper film. Mg on the upper side of copper reacts with ambient oxygen and on the lower side with the adsorbed oxygen in the substrate to form layers of MgO. High-resolution transmission electron microscopy (HRTEM) measurements showed thin layers of MgO formed on either side of the copper films. The lower MgO layer acts as a diffusion barrier and inhibits the diffusion of Cu into the system while the upper MgO layer acts as a passivating layer and protects copper against oxidation. This approach can also be used to grow high quality epitaxial YBa2Cu3O7−δ films with MgO acting as a buffer for the superconducting device applications.}, number={1}, journal={MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY}, author={Chugh, A and Tiwari, A and Kvit, A and Narayan, J}, year={2003}, month={Sep}, pages={45–48} }
 @article{tiwari_chugh_jin_narayan_2003, title={Role of self-assembled gold nanodots in improving the electrical and optical characteristics of zinc oxide films}, volume={3}, ISSN={["1533-4880"]}, DOI={10.1166/jnn.2003.217}, abstractNote={We have studied the effect of embedding nanocrystalline Au particles on the electrical and optical characteristics of ZnO films. Au-embedded epitaxial ZnO films were deposited on (0001) sapphire substrates with a pulsed laser deposition technique. The crystalline quality of both the ZnO matrix and Au nanoparticles was investigated by X-ray diffraction and transmission electron microscopy. Composite films were characterized by photoluminescence, optical absorption, and low-temperature electrical resistivity measurements. Photoluminescence spectra of theses films showed a sharp excitonic peak at 3.22 +/- 0.05 eV without any signature of green band emission. Electrical resistivity measurements showed these films to be highly conducting, with a room-temperature resistivity of 3.4 +/- 0.2 m omega-cm.}, number={5}, journal={JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY}, author={Tiwari, A and Chugh, A and Jin, C and Narayan, J}, year={2003}, month={Oct}, pages={368–371} }
 @article{tiwari_chug_jin_kumar_narayan_2002, title={Integration of single crystal La0.7Sr0.3MnO3 films with Si(001)}, volume={121}, ISSN={["0038-1098"]}, DOI={10.1016/S0038-1098(02)00029-7}, abstractNote={We have successfully grown high quality epitaxial La0.7Sr0.3MnO3 (LSMO) films on Si(001) substrate using TiN/MgO/SrTiO3 buffer layers by a pulsed laser deposition technique. The integration of LSMO with Si(100) was realized by domain matching epitaxy of TiN on Si(001) and lattice matching epitaxy of MgO, SrTiO3 and LSMO. During domain matching epitaxy, four lattice constants of TiN match with three of silicon across the TiN/Si(001) interface. X-ray diffraction and transmission electron microscope investigations showed the films to be single phase, single crystalline and epitaxial with (001) orientation. Electrical resistivity measurements showed a metal–insulator transition with a resistivity peak at ∼305 K. Enhanced electron–electron interactions are found to play significant role in LSMO films at low temperatures.}, number={12}, journal={SOLID STATE COMMUNICATIONS}, author={Tiwari, A and Chug, A and Jin, C and Kumar, D and Narayan, J}, year={2002}, pages={679–682} }