@article{kim_han_osburn_2004, title={Effect of post-metallization annealing for alternative gate stack devices}, volume={151}, ISSN={["1945-7111"]}, DOI={10.1149/1.1636181}, abstractNote={The effect of the post-metallization annealing of devices having HfO 2 , La 2 O 3 , or Y 2 O 3 dielectrics and poly-Si or TaN gate electrodes was studied. Forming gas (10% H 2 /90% N 2 ) annealing at 400°C enhanced drive current and channel mobility of devices having 1.2 nm HfO 2 gate dielectrics, by eliminating interface states. Post-metal annealing in 10% D 2 for 1.2 nm HfO 2 gate dielectrics resulted in larger enhancements in drive current and device channel mobility than forming gas annealing. Similar enhancements of the device characteristics were observed in La 2 O 3 (300 mV shift in both flatband and threshold voltage) and Y 2 O 3 (200 mV shift only in threshold voltage) materials. Annealing in pure nitrogen was found to degrade the dielectric quality of HfO 2 , including a decrease in device current and 50% lower capacitance.}, number={2}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Kim, I and Han, SK and Osburn, CM}, year={2004}, month={Feb}, pages={F29–F35} }
 @article{kim_iafrate_2004, title={Entanglement in the interaction between two quantum oscillator systems}, volume={17}, ISSN={["0894-9875"]}, DOI={10.1007/s10702-004-0902-9}, abstractNote={The fundamental quantum dynamics of two interacting oscillator systems are studied in two different scenarios. In one case, both oscillators are assumed to be linear, whereas in the second case, one oscillator is linear and the other is a non-linear, angular-momentum oscillator; the second case is, of course, more complex in terms of energy transfer and dynamics. These two scenarios have been the subject of much interest over the years, especially in developing an understanding of modern concepts in quantum optics and quantum electronics. In this work, however, these two scenarios are utilized to consider and discuss the salient features of quantum behaviors resulting from the interactive nature of the two oscillators, i.e., coherence, entanglement, spontaneous emission, etc., and to apply a measure of entanglement in analyzing the nature of the interacting systems. The Heisenberg equation for both coupled oscillator scenarios are developed in terms of the relevant reduced kinematics operator variables and parameterized commutator relations. For the second scenario, by setting the relevant commutator relations to one or zero, respectively, the Heisenberg equations are able to describe the full quantum or classical motion of the interaction system, thus allowing us to discern the differences between the fully quantum and fully classical dynamical picture. For the coupled linear and angular-momentum oscillator system in the fully quantum-mechanical description, we consider special examples of two, three, four-level angular momentum systems, demonstrating the explicit appearances of entanglement. We also show that this entanglement persists even as the coupled angular momentum oscillator is taken to the limit of a large number of levels, a limit which would go over to the classical picture for an uncoupled angular momentum oscillator.}, number={6}, journal={FOUNDATIONS OF PHYSICS LETTERS}, author={Kim, I and Iafrate, GJ}, year={2004}, month={Nov}, pages={507–534} }
 @article{kim_han_osburn_2004, title={Stability of advanced gate stack devices}, volume={151}, ISSN={["1945-7111"]}, DOI={10.1149/1.1636180}, abstractNote={The stability of poly-Si gated HfO 2 (∼1.2 nm equivalent oxide thickness, EOT) and Y 2 O 3 (∼3.1 nm EOT) n-channel metal oxide semiconductor field effect transistor devices were assessed after constant current stressing of the gate. The changes in threshold voltage and transconductance were measured as a function of stress time and stress current over the range of 10 -3 to 10 5 C of injected charge per square centimeter. With forming gas annealed HfO 2 , positive shifts in the threshold voltage exhibited a power-law dependence. Under high stressing conditions, a power-law dependence of degradation of threshold voltage on the injected charge (∼Q 0.1 ) was observed. Stressing at high current was seen to generate traps. Stressing at low current revealed a saturation of the threshold voltage after modest stressing times. Stressing on deuterium annealed sample showed less V t and g m shift (under high injection conditions), which is attributed to the effectiveness of heavier D 2 in preventing trap generation under high stressing conditions. With Y 2 O 3 , stressed at similar electric fields, the threshold voltage shifted negatively and the transconductance increased.}, number={2}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Kim, I and Han, SK and Osburn, CM}, year={2004}, month={Feb}, pages={F22–F28} }
 @article{song_kim_2003, title={Computational leakage: Grover's algorithm with imperfections}, volume={23}, number={2}, journal={European Physical Journal. D, Atomic, Molecular and Optical Physics}, author={Song, P. H. and Kim, I.}, year={2003}, pages={299–303} }
 @article{osburn_kim_han_de_yee_gannavaram_lee_lee_luo_zhu_et al._2002, title={Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?}, volume={46}, ISSN={["2151-8556"]}, DOI={10.1147/rd.462.0299}, abstractNote={The vertical scaling requirements for gate stacks and for shallow extension junctions are reviewed. For gate stacks, considerable progress has been made in optimizing oxide/nitride and oxynitride dielectrics to reduce boron penetration and dielectric leakage compared to pure SiO2 in order to allow sub-2-nm dielectrics. Several promising alternative material candidates exist for 1-nm equivalent oxide thickness (EOT)-for example, HfO2, ZrO2, and their silicates. Nevertheless, considerable challenges lie ahead if we are to achieve an EOT of less than 0.5 nm. If only a single molecular interface layer of oxide is needed to preserve high channel mobility, it seems likely that an EOT of 0.4-0.5 nm would represent the physical limit of dielectric scaling, but even then with a very high leakage (∼105 A/cm2). For junctions, the main challenge lies in providing low parasitic series resistance as depths are scaled in order to reduce short-channel effects. Because contacts are ultimately expected to dominate the parasitic resistance, low-barrier-height contacts and/or very heavily doped junctions will be required. While ion implantation and annealing processes can certainly be extended to meet the junction-depth and series-resistance requirements for additional generations, alternative low-temperature deposition processes that produce either metastably or extraordinarily activated, abruptly doped regions seem better suited to solve the contact resistance problem.}, number={2-3}, journal={IBM JOURNAL OF RESEARCH AND DEVELOPMENT}, author={Osburn, CM and Kim, I and Han, SK and De, I and Yee, KF and Gannavaram, S and Lee, SJ and Lee, CH and Luo, ZJ and Zhu, W and et al.}, year={2002}, pages={299–315} }